Method of integrating scatterometry metrology structures directly into die design
First Claim
1. A method, comprising:
- providing a semiconducting substrate;
forming at least one production integrated circuit device in each of a plurality of production die formed on said substrate;
converting at least one of said plurality of production die to a non-production die by forming at least one grating structure in said at least one production die;
illuminating said at least one grating structure formed in said non-production die; and
measuring light reflected off of said illuminated grating structure to generate an optical characteristic trace for said illuminated grating structure formed in said non-productive die.
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Abstract
The present invention is directed to a method of incorporating metrology grating structures into die design. In one embodiment, the invention is directed to a wafer comprised of a semiconducting substrate, a plurality of production die formed on the substrate, and at least one non-production die formed on the substrate, the non-production die having at least one grating structure formed therein that will ultimately be measured in subsequent metrology tests. The present invention is also directed to a method that comprises providing a semiconducting substrate, forming at least one production integrated circuit device in a plurality of production die formed on the substrate, and forming at least one grating structure in the non-production die. The method further comprises illuminating at least one of the grating structures formed in the non-production die and measuring light reflected off of the illuminated grating structure to generate an optical characteristic trace for the illuminated grating structure formed in the non-production die.
13 Citations
27 Claims
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1. A method, comprising:
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providing a semiconducting substrate;
forming at least one production integrated circuit device in each of a plurality of production die formed on said substrate;
converting at least one of said plurality of production die to a non-production die by forming at least one grating structure in said at least one production die;
illuminating said at least one grating structure formed in said non-production die; and
measuring light reflected off of said illuminated grating structure to generate an optical characteristic trace for said illuminated grating structure formed in said non-productive die. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method, comprising:
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providing a semiconducting substrate comprised of polysilicon;
forming at least one production integrated circuit device in each of a plurality of production die formed on said substrate;
converting a first group of the plurality of production die to a plurality of non-production die by forming a plurality of grating structures in each of the plurality of production die in said first group;
illuminating at least one of said plurality of grating structures formed in said non-production die; and
measuring light reflected off of said illuminated grating structure to generate an optical characteristic trace for said illuminated grating structure formed in said non-productive die. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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Specification