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Method for generating a proximity model based on proximity rules

  • US 6,602,728 B1
  • Filed: 01/05/2001
  • Issued: 08/05/2003
  • Est. Priority Date: 01/05/2001
  • Status: Expired due to Fees
First Claim
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1. A method for generating an optical proximity correction (OPC) model, comprising:

  • (a) transferring at least one mask test pattern onto a wafer test pattern at a first focus and dose;

    (b) measuring size data for the at least one wafer test pattern, said size data corresponding to a reference line size and reference spacing on said mask test pattern;

    (c) providing a set of correction rules based on a product design grid for at least one additional reference line size and for at least one additional reference spacing;

    (d) creating a model calibration table from said set of correction rules, said model calibration table including second line size and second spacing at a second focus and dose corresponding to said size data in accordance with said set of correction rules; and

    (e) calibrating an OPC model based on said model calibration table.

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