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Accelerated thermal stress cycle test

  • US 6,604,853 B2
  • Filed: 10/11/2001
  • Issued: 08/12/2003
  • Est. Priority Date: 10/11/2001
  • Status: Expired due to Term
First Claim
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1. An accelerated thermal stress cycle test comprising the steps of:

  • providing a cluster of reaction chambers including at least one chemical vapor deposition (CVD) chamber and at least one cool-down chamber;

    heating a pre-processed wafer to at least 350°

    C. in less than 2 minutes by positioning said wafer in one of said at least one CVD chambers in an inert gas;

    cooling said pre-processed wafer to a temperature not higher than 70°

    C. in less than 30 seconds by moving said wafer from said at least one CVD chamber to one of said at least one cool-down chambers;

    repeating sequentially said heating and cooling steps for at least three times; and

    determining any defect caused by said repeated heating and cooling steps.

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