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Process for etching gallium nitride compound based semiconductors

  • US 6,605,548 B1
  • Filed: 05/30/2000
  • Issued: 08/12/2003
  • Est. Priority Date: 06/01/1999
  • Status: Expired due to Term
First Claim
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1. A method for etching a gallium nitride compound-based semiconductor, comprising:

  • applying to the semiconductor an aqueous solution containing an oxidizing agent, the solution and said oxidizing agent in combination capable of dissolving gallium oxide and consuming electrons generated during etching, wherein the oxidizing agent comprises peroxydisulfate ions, the solution comprising hydroxide or hydrogen ions.

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