Reticle and direct lithography writing strategy

• US 6,605,816 B2
• Filed: 11/16/2001
• Issued: 08/12/2003
• Est. Priority Date: 09/18/2000
• Status: Expired due to Term

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: Micronic Laser Systems AB (Mycronic AB)
• Inventors: Sandström, Torbjörn
• Primary Examiner(s): Berman, Jack
• Assistant Examiner(s): SMITH, JOHNNIE L
• Application Number:
  US09/992,653
• Publication Number:
  US 20020125443A1
• Time in Patent Office: 634 Days
• Field of Search: 430/5, 250/492.22
• US Class Current: 250/492.22
• CPC Class Codes: G03F 1/26 Phase shift masks [PSM]; PSM blanks; Preparation thereof
• CPC Class Codes: G03F 1/34 Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
• CPC Class Codes: G03F 1/78 by charged particle beam [CPB], e.g. electron beam patterning of masks
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: G03F 7/2053 using a laser ablative removal B41C
• CPC Class Codes: Y10S 430/143 Electron beam

Abstract

The present invention relates to preparation of patterned reticles to be used as masks in the production of semiconductor and other devices. Methods and devices are described utilizing resist and transfer layers over a masking layer on a reticle. The methods and devices produce small feature dimensions in masks and phase shift masks. The methods described for masks are in many cases applicable to the direct writing on other workpieces having similarly small features, such as semiconductor, cryogenic, magnetic and optical microdevices.

Claims

1. A method of exposing a reticle using a pattern generator, including exposing a resist layer over the reticle in a plurality of exposure passes, said exposure passes made in a first direction and a second direction, the first and second directions being essentially opposed.

2. The method of claim 1, wherein the plurality of exposure passes includes at least four exposure passes.

3. The method of claim 1, wherein successive passes are written in opposing directions.

4. The method of claim 2, wherein successive passes are written in opposing directions.

5. The method of claim 2, wherein the exposure passes utilize a photon energy beam.

6. The method of claim 2, wherein the pattern generator utilizes an electron beam.

7. The method of claim 2, wherein the pattern generator utilizes a Gaussian energy beam.

8. The method of claim 2, wherein the pattern generator utilizes a particle beam.

9. A method exposing a reticle using a pattern generator, including exposing a resist layer over the reticle in a plurality of exposure passes, said exposure passes having an average time from exposure to completion of all exposure passes that is essentially equal for locations disbursed across the reticle.

10. The method of claim 9, wherein the plurality of exposure passes includes at least four exposure passes.

11. The method of claim 9, wherein successive passes are written in essentially opposing directions.

12. The method of claim 10, wherein successive passes are written in opposing directions.

13. The method of claim 10, wherein the pattern generator utilizes a photon energy beam.

14. The method of claim 10, wherein the pattern generator utilizes an electron beam.

15. The method of claim 10, wherein the pattern generator utilizes a Gaussian energy beam.

16. The method of claim 10, wherein the pattern generator utilizes a particle beam.

17. A method exposing a resist layer, including exposing the resist layer in a plurality of exposure passes, said exposure passes made in a first direction and a second direction, the first and second directions being essentially opposed.

18. The method of claim 17, wherein the plurality of exposure passes includes at least four exposure passes.

19. A method exposing a resist layer, including exposing the resist layer in a plurality of exposure passes, said exposure passes having an average time from exposure to completion of all exposure passes that is essentially equal for locations disbursed across the resist layer.

20. The method of claim 19, wherein the plurality of exposure passes includes at least four exposure passes.

21. The method of claim 19, wherein successive passes are written in essentially opposing directions.

22. The method of claim 20, wherein successive passes are written in opposing directions.