Multiple storage node full color active pixel sensors

• US 6,606,120 B1
• Filed: 04/12/1999
• Issued: 08/12/2003
• Est. Priority Date: 04/24/1998
• Status: Expired due to Term

• Current Assignee: Foveon, Inc. (Avis Budget Group Incorporated)
• Original Assignee: Foveon, Inc. (Avis Budget Group Incorporated)
• Inventors: Merrill, Ricahrd B., Lyon, Richard F.
• Primary Examiner(s): Garber, Wendy R.
• Assistant Examiner(s): NGUYEN, LUONG TRUNG
• Application Number:
  US09/290,361
• Time in Patent Office: 1,583 Days
• Field of Search: 348/272, 348/273, 348/274, 348/277, 348/300, 348/301, 348/302, 348/308, 348/311, 250/208.1, 250/226, 250/214.1, 257/440, 257/458, 257/463, 257/291, 257/292
• US Class Current: 348/273
• CPC Class Codes: H01L 27/14645 Colour imagers
• CPC Class Codes: H01L 27/14647 Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
• CPC Class Codes: H01L 27/14652 Multispectral infrared imagers, having a stacked pixel-element structure, e.g. npn, npnpn or MQW structures
• CPC Class Codes: H01L 31/111 characterised by at least three potential barriers, e.g. photothyristors
• CPC Class Codes: H04N 2209/047 using multispectral pick-up elements
• CPC Class Codes: H04N 25/135 based on four or more different wavelength filter elements
• CPC Class Codes: H04N 25/17 Colour separation based on photon absorption depth, e.g. full colour resolution obtained simultaneously at each pixel location
• CPC Class Codes: H04N 25/53 Control of the integration time
• CPC Class Codes: H04N 25/534 depending on the spectral component
• CPC Class Codes: H04N 25/77 Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
• CPC Class Codes: H04N 3/155 Control of the image-sensor operation, e.g. image processing within the image-sensor

Abstract

An active pixel sensor is disposed on a semiconductor substrate of a first conductivity type, and comprises a plurality of semiconductor regions disposed in the substrate, each successive one of the semiconductor regions being enclosed entirely within another enclosing one of the semiconductor regions. The plurality of semiconductor regions alternates between the first conductivity type and a second conductivity type opposite to that of the first conductivity type. A first enclosing one of the semiconductor regions containing all other ones of the semiconductor regions is of the second conductivity type, such that a plurality of series-connected photodiodes is formed between the substrate and an innermost enclosed one of the semiconductor regions. A plurality of reset switches each has a first terminal coupled to a different one of the alternating semiconductor regions, and a second terminal switchably coupled to a reset potential. Each one of a plurality of storage nodes is coupled to a separate one of the plurality of alternating semiconductor regions.

Claims

1. An active pixel sensor disposed on a semiconductor substrate of a first conductivity type, comprising:

a plurality of semiconductor regions, a first one of said semiconductor regions disposed in the substrate, each successive one of said semiconductor regions being enclosed entirely within another enclosing one of said semiconductor regions, said plurality of semiconductor regions alternating between the first conductivity type and a second conductivity type opposite to that of said first conductivity type, said first one of said semiconductor regions containing all successive ones of said semiconductor regions being of said second conductivity type, such that a plurality of series-connected photodiodes is formed between said substrate and an innermost enclosed one of said semiconductor regions;

a plurality of reset switches, each one of said plurality of reset switches having a first terminal coupled to a different one of said alternating semiconductor regions, each one of said plurality of reset switches having a second terminal switchably coupled to a reset potential; and

a plurality of storage nodes, each one of said plurality of storage nodes coupled to a separate one of said plurality of alternating semiconductor regions.

2. The active pixel sensor of claim 1, wherein said first conductivity type is p-type and said second conductivity type is n-type.

3. The active pixel sensor of claim 1, wherein said first conductivity type is n-type and said second conductivity type is p-type.

4. The active pixel sensor of claim 1, wherein said plurality of photodiodes includes a red light sensitive photodiode, a green light sensitive photodiode, and a blue light sensitive photodiode.

5. The active pixel sensor of claim 1 wherein said plurality of series connected photodiodes are formed from junctions existing at interfaces between adjacent ones of said semiconductor regions, said interfaces having portions substantially parallel to an upper surface of said substrate, said portions disposed at depths from said upper surface selected to exhibit photocharge activity from light of preselected wavelengths.

6. An active pixel sensor as in claim 1, further including readout means coupled to said plurality of storage nodes for providing an output signal therefrom related to charge stored on said plurality of storage nodes.

7. An active pixel sensor as in claim 1, further including a plurality of transfer switches, each of said transfer switches coupled between a different one of said semiconductor regions and one of said plurality of storage nodes, each of said transfer switches responsive to a transfer signal.

8. An active pixel sensor as in claim 1, further including a plurality of readout switches, each of said readout switches coupled between a different one of said plurality of storage nodes and an output conductor, each of said readout switches responsive to a readout signal.

9. An active pixel sensor as in claim 1, wherein each of said storage nodes includes a capacitive storage element.

10. An active pixel sensor disposed on a semiconductor substrate of a first conductivity type, comprising:

a first well having a second conductivity type opposite to that of said first conductivity type disposed in said substrate;

a second well having said first conductivity type disposed within said first well;

a region of said second conductivity type disposed in said second well;

a plurality of reset switches, each one of said plurality of reset switches having a first terminal coupled to a different one of said first well, said second well, and said region of said second conductivity type, each one of said plurality of reset switches having a second terminal switchably coupled to a reset potential; and

a plurality of storage nodes, each one of said plurality of storage nodes coupled to a separate one of said first well, said second well, and said region of said second conductivity type.

11. The active pixel sensor of claim 10, wherein said first conductivity type is p-type and said second conductivity type is n-type.

12. The active pixel sensor of claim 10, wherein said first conductivity type is n-type and said second conductivity type is p-type.

13. The active pixel sensor of claim 10, wherein said plurality of photodiodes includes a red light sensitive photodiode, a green light sensitive photodiode, and a blue light sensitive photodiode.

14. The active pixel sensor of claim 10 wherein said plurality of series connected photodiodes are formed from junctions existing at interfaces between adjacent ones of said semiconductor regions, said interfaces having portions substantially parallel to an upper surface of said substrate, said portions disposed at depths from said upper surface selected to exhibit photocharge activity from light of preselected wavelengths.

15. An active pixel sensor as in claim 10, further including readout means coupled to said plurality of storage nodes for providing an output signal therefrom related to charge stored on said plurality of storage nodes.

16. An active pixel sensor as in claim 10, further including a plurality of transfer switches, each of said transfer switches coupled between a different one of said semiconductor regions and one of said plurality of storage nodes, each of said transfer switches responsive to a transfer signal.

17. An active pixel sensor as in claim 10, further including a plurality of readout switches, each of said readout switches coupled between a different one of said plurality of storage nodes and an output conductor, each of said readout switches responsive to a readout signal.

18. An active pixel sensor as in claim 10, wherein each of said storage nodes includes a capacitive storage element.