Integrated circuit device having an embedded heat slug
First Claim
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1. A method comprising:
- cooling a portion of an integrated circuit located on a frontside surface of a semiconductor substrate, said semiconductor substrate having a backside surface opposite said frontside surface, said portion comprising a high power density region of said integrated circuit;
creating an opening in said backside surface of said semiconductor substrate adjacent said portion of said integrated circuit, wherein a distance between said backside surface of said semiconductor substrate and a floor of said opening is greatest directly above said high power density region;
depositing a thermally conductive, infrared transparent material in said opening so that the thermally conductive material is embedded in close proximity directly above the high power region; and
planarizing said backside surface of said semiconductor substrate after depositing said thermally conductive material in said opening.
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Abstract
An integrated circuit device having an embedded heat slug. The integrated circuit device comprises, in one embodiment, a semiconductor substrate having a frontside surface and a backside surface. The semiconductor substrate includes an integrated circuit on the frontside surface. A heat slug is disposed in an opening in the backside surface of the semiconductor substrate adjacent the integrated circuit.
52 Citations
41 Claims
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1. A method comprising:
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cooling a portion of an integrated circuit located on a frontside surface of a semiconductor substrate, said semiconductor substrate having a backside surface opposite said frontside surface, said portion comprising a high power density region of said integrated circuit;
creating an opening in said backside surface of said semiconductor substrate adjacent said portion of said integrated circuit, wherein a distance between said backside surface of said semiconductor substrate and a floor of said opening is greatest directly above said high power density region;
depositing a thermally conductive, infrared transparent material in said opening so that the thermally conductive material is embedded in close proximity directly above the high power region; and
planarizing said backside surface of said semiconductor substrate after depositing said thermally conductive material in said opening. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 24)
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12. A method comprising:
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creating an embedded heat slug in a semiconductor substrate having an integrated circuit device on a frontside surface thereof, said semiconductor substrate having a backside surface opposite said frontside surface;
creating an opening in said backside surface of said semiconductor substrate adjacent a portion of said integrated circuit, said portion comprising a high power density region of said integrated circuit, wherein a distance between said backside surface of said semiconductor substrate and a floor of said opening is greatest directly above said high power density region;
depositing a thermally conductive, infrared transparent material, in said opening so that the thermally conductive material is embedded in close proximity directly above the high power region; and
planarizing said backside surface of said semiconductor substrate after depositing said thermally conductive material in said opening. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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25. A method comprising:
cooling a portion of an integrated circuit located on a frontside surface of a semiconductor substrate, said semiconductor substrate having a backside surface opposite said frontside surface, wherein cooling said portion of an integrated circuit includes creating an opening in said backside surface of said semiconductor substrate adjacent a portion of said integrated circuit, said portion of said integrated circuit comprising a high power density region of said integrated circuit, wherein a distance between said backside surface of said semiconductor substrate and a floor of said opening is greatest directly above said high power density region, embedding a thermally conductive, infrared transparent material in said opening to fill said opening so that the thermally conductive, infrared transparent material is in close proximity directly above the high power region, and planarizing said backside surface of said semiconductor substrate after embedding said thermally conductive material in said opening. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39)
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40. A method comprising:
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choosing a location to embed a thermally conductive, infrared transparent heat slug in a semiconductor substrate having an integrated circuit device on a frontside surface thereof, said semiconductor substrate having a backside surface opposite said frontside surface, and wherein choosing said location to embed said heat slug includes selecting a high power density region;
creating an opening in said backside surface of said semiconductor substrate adjacent said integrated circuit device, wherein a distance between said backside surface of said semiconductor substrate and a floor of said opening is greatest directly above said high power density region;
embedding said heat slug in said opening to fill said opening so that the heat slug is in close proximity directly above the high power density region; and
planarizing said backside surface of said semiconductor substrate after embedding said heat slug in said opening. - View Dependent Claims (41)
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Specification