Semiconductor wafer having a thin die and tethers and methods of making the same

• US 6,608,370 B1
• Filed: 01/28/2002
• Issued: 08/19/2003
• Est. Priority Date: 01/28/2002
• Status: Expired due to Fees

• Current Assignee: Temic Automotive of North America, Incorporated (Continental AG)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Ross, Carl, Turalski, Stefan, Garza, Raymond, Chen, Shiuh-Hui Steven
• Primary Examiner(s): Graybill, David E.
• Assistant Examiner(s): MITCHELL, JAMES M
• Application Number:
  US10/058,557
• Publication Number:
  US 20030141570A1
• Time in Patent Office: 568 Days
• Field of Search: 257/668, 257/678, 206/710, 206/711, 206/714
• US Class Current: 257/678
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm
• CPC Class Codes: H01L 21/67132 Apparatus for placing on an insulating substrate, e.g. tape
• CPC Class Codes: H01L 21/6838 with gripping and holding devices using a vacuum; Bernoulli devices
• CPC Class Codes: H01L 21/68728 characterised by a plurality of separate clamping members, e.g. clamping fingers
• CPC Class Codes: Y10S 438/977 Thinning or removal of substrate

Abstract

A semiconductor wafer (70) that includes a support body (72), at least one thin die (20, 60), and a plurality of tethers (78, 178). The support body (72) is made of a semiconductor material. The thin die (20, 60) has a circuit (21) formed thereon and has an outer perimeter (74) defined by an open trench (76). The open trench (76) separates the thin die (20, 60) from the support body (72). The tethers (78, 178) extend across the open trench (76) and between the support body (72) and the thin die (20, 60). A method of making a thin die (20, 60) on a wafer (70) where the wafer (70) has a support body (72), a topside (82) and a backside (90). A circuit (21) is formed on the topside (82) of the wafer (70). The method may include the steps of: forming a cavity (88) on the backside (90) of the wafer (70) beneath the circuit (21) that defines a first layer (92) that includes the circuit (21); forming a trench (76) around the circuit (21) on the topside (82) of the wafer (70) that defines an outer perimeter (74) of the thin die (20, 60); forming a plurality of tethers (78, 178) that extend across the trench (76) and between the wafer support body (72) and the thin die (20, 60); and removing a portion of the first layer (92) to define the bottom surface (75) of the thin die (20, 60).

Claims

1. A semiconductor wafer comprising:

a support body made of a semiconductor material;

at least one thin die having a circuit formed thereon, the thin die having an outer perimeter defined by an open trench, the open trench separating the thin die from the support body; and

a plurality of tethers extending across the open trench and between the support body and the at least one thin die.

2. The semiconductor wafer of claim 1 wherein the support body has a first thickness and the at least one thin die has a second thickness, the second thickness being substantially less than the first thickness.

3. The semiconductor wafer of claim 1 wherein at least one of the plurality of tethers has a portion that extends across the open trench, the portion extending across the open trench having its smallest width adjacent to the outer perimeter of the at least one thin die.

4. The semiconductor wafer of claim 1 wherein at least one of the plurality of tethers has a portion that extends across the open trench, the portion extending across the open trench having at least a portion of a groove.

5. The semiconductor wafer of claim 1 wherein at least one of the plurality of tethers has a portion that extends across the open trench, the portion extending across the open trench having at least a portion of a hole.

6. The semiconductor wafer of claim 1 wherein the circuit of the die is adapted for a pressure sensor.

7. The semiconductor wafer of claim 1 wherein the plurality of tethers are made of a polyimide material.

11. The semiconductor wafer of claim 1 wherein at least one of the plurality of tethers is substantially triangular in shape.

12. The semiconductor wafer of claim 11 wherein the at least one substantially triangular tether has a base and a tip, the base of the tether being attached to the support body of the wafer and the tip of the tether extending across the trench and attached to the at least one thin die.

8. A wafer comprising:

a support body made of a semiconductor material;

at least one thin semiconductor die having a circuit formed thereon, the thin semiconductor die having an outer perimeter defined by an open trench, the open trench separating the thin semiconductor die from the support body; and

a means for attaching the outer perimeter of the at least one thin semiconductor die to the support body across the open trench.

9. The wafer of claim 8 wherein the means for attaching the outer perimeter of the at least one thin semiconductor die to the support body across the open trench includes a plurality of tethers.

10. The wafer of claim 9 wherein the tethers are made of a polyimide material.

13. A wafer comprising:

a support body made of a semiconductor the support body having a plurality of apertures and having a first thickness; and

a plurality of semiconductor dies each semiconductor die having an integrated circuit formed thereon and having a second thickness, the second thickness being substantially less than the first thickness;

wherein each of the dies is retained within one of the apertures in the support body such that a gap exists between an outer perimeter of each die and the support body, each die retained within the aperture by a plurality of tethers that extend across the gap and between the outer perimeter of each die and the support body.

14. The wafer of claim 13 wherein at least one of the plurality of tethers has a portion that extends across the gap, the portion extending across the gap having its smallest width adjacent to the outer perimeter of the die.

15. The wafer of claim 13 wherein at least one of the plurality of tethers has a portion that extends across the gap, the portion extending across the gap having at least a portion of a groove.

16. The wafer of claim 13 wherein at least one of the plurality of tethers has a portion that extends across the gap, the portion extending across the gap having at least a portion of a hole.

17. The wafer of claim 13 wherein the integrated circuit formed on the die is adapted for a pressure sensor.

18. The wafer of claim 13 wherein the plurality of tethers are made of a polyimide material.

19. The wafer of claim 13 wherein at least one of the plurality of tethers is substantially triangular in shape.

20. The wafer of claim 19 wherein the at least one substantially triangular tether has a base and a tip, the base of the tether being attached to the support body of the wafer and the tip of the tether extending across the gap and attached to the die.