Write current compensation for temperature variations in memory arrays

• US 6,608,790 B2
• Filed: 12/03/2001
• Issued: 08/19/2003
• Est. Priority Date: 12/03/2001
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Hewlett-Packard Development Company, L.P. (HP Inc.)
• Inventors: Bhattacharyya, Manoj K., Tran, Lung T.
• Primary Examiner(s): Ho, Hoai
• Assistant Examiner(s): PHAM, LY D
• Application Number:
  US09/998,216
• Publication Number:
  US 20030103401A1
• Time in Patent Office: 624 Days
• Field of Search: 365/211, 365/212, 365/242
• US Class Current: 365/211
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: G11C 7/04 with means for avoiding disturbances due to temperature effects

Abstract

A memory device includes a memory array having a substrate, an array of memory cells disposed over the substrate, row conductors coupled to the memory cells, and column conductors coupled to the memory cells. The memory device also includes current sources that generate variable write currents in response to temperature changes in the memory array. The variable write currents are generated to accommodate the change in coercivities of the memory cells as the temperature of the array changes. A current source can include a temperature sensor that provides a continuous, immediate output to the current sensor to ensure accurate adjustment of a write current generated by the current source. There is no need to halt operation of the memory device to calibrate the current source. In addition, the current source provides an accurate adjustment to the write current because the temperature used by the temperature sensor to generate the output may be taken contemporaneously with generation of the write current.

Claims

1. A memory device comprising:

a substrate;

an array of first conductors coupled to the memory cells; and

a plurality of second conductors coupled to the memory cells, wherein the first conductors cross the second conductors at the memory cells;

a first current source selectively coupled to the first conductors and capable of providing a first write current to selected first conductors, wherein the first current source comprises;

a first temperature sensor disposed to sense a temperature of the memory array, wherein the first temperature sensor provides a continuous, immediate output to adjust the first write current to compensate for temperature variations in the memory array; and

a second current source selectively coupled to the second conductors.

2. The memory device of claim 1, wherein the first temperature sensor comprises:

a plurality of active devices having resistances that vary with temperature.

3. The memory device of claim 2, wherein the plurality of active devices comprise:

transducer devices capable of providing a varying output voltage in response to varying temperature.

4. The memory device of claim 1, wherein the first temperature sensor is coupled to a control element of the first current source.

5. The memory device of claim 4, wherein the control element comprises:

a three-terminal device.

6. The memory device of claim 4, wherein the first current source comprises:

an output current circuit coupled to the control element; and

a set nominal current circuit, the set nominal current circuit comprising the control element and a source of a bias voltage.

7. The memory device of claim 6, wherein the control element controls a flow of a reference current through the output current circuit.

8. The memory device of claim 7, wherein the output current circuit comprises a current mirror, the current mirror generating the first write current from the reference current.

9. The memory device of claim 1, wherein the first temperature sensor provides the output while a first write current is generated.

10. The memory device of claim 9, wherein the first current source is coupled to a voltage.

11. The memory device of claim 9, wherein the first current source comprises a source of a bias voltage, the bias voltage determining when the voltage develops a first write current.

12. The memory device of claim 1, wherein the second current source comprises:

a second temperature sensor disposed to sense a temperature of the memory array, wherein the second temperature sensor provides an output to adjust a second write current generated by the second current source to compensate for temperature variations in the memory array.

13. The memory device of claim 12, comprising:

a first bank of switches selectively coupling the first current source to the first conductors; and

a second bank of switches selectively coupling the second current source to the second conductors.