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Write current compensation for temperature variations in memory arrays

  • US 6,608,790 B2
  • Filed: 12/03/2001
  • Issued: 08/19/2003
  • Est. Priority Date: 12/03/2001
  • Status: Expired due to Term
First Claim
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1. A memory device comprising:

  • a substrate;

    an array of first conductors coupled to the memory cells; and

    a plurality of second conductors coupled to the memory cells, wherein the first conductors cross the second conductors at the memory cells;

    a first current source selectively coupled to the first conductors and capable of providing a first write current to selected first conductors, wherein the first current source comprises;

    a first temperature sensor disposed to sense a temperature of the memory array, wherein the first temperature sensor provides a continuous, immediate output to adjust the first write current to compensate for temperature variations in the memory array; and

    a second current source selectively coupled to the second conductors.

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