Target acquisition technique for CD measurement machine

• US 6,608,920 B1
• Filed: 10/29/1998
• Issued: 08/19/2003
• Est. Priority Date: 10/29/1998
• Status: Expired due to Term

• Current Assignee: Applied Materials Incorporated, National Semiconductor Corporation (Texas Instruments, Inc.)
• Original Assignee: Applied Materials Incorporated
• Inventors: Dusa, Mircea, Su, Bo
• Primary Examiner(s): Mehta, Bhavesh M.
• Assistant Examiner(s): CHAWAN, SHEELA C
• Application Number:
  US09/183,077
• Time in Patent Office: 1,755 Days
• Field of Search: 382/144, 382/151, 382/181, 382/305, 382/147, 256/252.1, 256/492.2, 438/14, 438/780, 430/30, 430/302, 348/135, 348/130, 328/35, 356/237.4, 356/620
• US Class Current: 382/144
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

In a process for measuring the CD of a mask pattern transferred to a semiconductor wafer, in which a series of dies are sequentially inspected by first locating a target area on the die and then vectoring to a CD measurement area, a technique is used whereby the stored image of an alignment target is used for pattern recognition in the process of acquiring each subsequent die'"'"'s target. The stored image is updated with each new die inspected, using an image of the most recently acquired target area. In this manner, the stored target image always closely approximates the next target to be acquired. Thus, according to the invention, difficulties in recognizing and centering on the target are minimized, and CD measurements of much higher reliability can be effected.

Claims

1. A method of improving the reliability of a critical dimension (CD) measurement in a photolithographic process, comprising the steps of:

a. storing as a reference an image of a selected target formed on a photolithographically exposed semiconductor wafer, and storing a vector value between a point of said selected target and a CD measurement site;

b. performing a pattern recognition process using said reference image, to acquire a next target formed on another region of said wafer, and using said vector value to acquire a CD measurement site within said another region;

c. updating said reference image by replacing said stored image with an image of said next target; and

d. repeating step (b) using the updated reference image.

2. A method as claimed in claim 1, wherein the selection of said selected target is based on the order in which all targets were photolithographically transferred onto said wafer.

3. A method as claimed in claim 2, wherein said selected target is the first photolithographically transferred target.

4. A method as claimed in claim 1, further comprising the steps of:

obtaining a simulated image of said next target using a simulator; and

,

using said simulated image to confirm correct acquisition of said next target.

5. A method as claimed in claim 1, further comprising the steps of:

obtaining a simulated image of said next target using a simulator; and

,

using said simulated image to train the pattern recognition process in searching for said next target.

6. A method as claimed in claim 1, further comprising the steps of:

obtaining a simulated image of said next target using a simulator; and

,

using said simulated image as a backup in case said pattern recognition process fails to acquire said next target.

7. A method of improving the reliability of an optical measurement, comprising the steps of:

storing as a reference an image of a first target area formed on a device, and a vector value between a point of said first target area and a measurement site;

performing a pattern recognition process using said reference image, to acquire a second target area formed on a second region of said device, and using said vector value to acquire a measurement site within said second region;

updating said reference image by replacing said stored image with an image of said second target area, performing a pattern recognition process using said update reference image, to acquire a third target area formed on a third region of said device, and using said vector value to acquire a measurement site within said third region.

8. A method of improving the reliability of site location, comprising the steps of:

a. storing as a reference an image of a selected target;

b. performing a pattern recognition process using said reference image, to acquire a next target;

c. updating said reference image by replacing said stored image with an image of said next target; and

repeating step b using said updated reference image, obtaining a simulated image of said next target using a simulator operating on an original target; and

,

using said simulated image to confirm correct acquisition of next target.

9. The method of claim 8, wherein said original target is obtain from a CAD design.

10. The method of claim 8, wherein said original target is an image of said selected target.

11. The method as claimed in claim 8, further comprising the steps of:

obtaining a simulated image of said next target using a simulator; and

,

using said simulated image to train the pattern recognition process in searching for said next target.

12. A method as claimed in claim 8, further comprising the steps of:

obtaining a simulated image of said next target using a simulator; and

,

using said simulated image as a backup in case said pattern recognition process fails to acquire said next target.