Method of controlling the formation of metal layers

• US 6,610,181 B1
• Filed: 04/30/2001
• Issued: 08/26/2003
• Est. Priority Date: 04/30/2001
• Status: Active Grant

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Besser, Paul R., King, Paul L., Kim, Susan
• Primary Examiner(s): VerSteeg, Steven H.
• Application Number:
  US09/845,952
• Time in Patent Office: 848 Days
• Field of Search: 427/9, 427/585, 427/576, 427/404, 438/197, 438/199, 438/283, 204/192.13, 204/192.15
• US Class Current: 204/192.13
• CPC Class Codes: C23C 14/545 using measurement on deposited material
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: C23C 26/00 Coating not provided for in groups C23C2/00 - C23C24/00
• CPC Class Codes: C23C 8/00 Solid state diffusion of only non-metal elements into metallic material surfaces diffusion of silicon C23C10/00; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals C23C14/00 takes precedence

Abstract

The present invention is directed to a method of controlling the formation of metal layers. In one illustrative embodiment, the method comprises depositing a layer of metal above a structure, irradiating at least one area of the layer of metal, and analyzing an x-ray spectrum of x-rays leaving the irradiated area to determine a thickness of the layer of metal. In further embodiments of the present invention, a plurality of areas, and in some cases at least five areas, of the layer of metal are irradiated. The layer of metal may be comprised of, for example, titanium, cobalt, nickel, copper, tantalum, etc.

Claims

1. A method, comprising:

depositing a first layer of metal above a patterned layer of insulating material having a plurality of openings formed therein;

irradiating at least one area of said first layer of metal;

analyzing an x-ray spectrum of x-rays leaving said irradiated area of said first layer of metal to determine a thickness of said first layer of metal;

depositing a second layer of metal above said first layer of metal;

irradiating at least one area of said second layer of metal; and

analyzing an x-ray spectrum of x-rays leaving said irradiated area of said second layer of metal to determine a thickness of said second layer of metal.

2. The method of claim 1, further comprising indicating an alarm condition if said determined thickness of said first layer of metal exceeds a preselected value.

3. The method of claim 1, further comprising indicating an alarm condition if said determined thickness of said second layer of metal exceeds a preselected value.

4. The method of claim 1, further comprising depositing additional metal material above said first layer of metal if said determined thickness of said first layer of metal is less than a preselected value.

5. The method of claim 1, further comprising depositing additional metal material above said second layer of metal if said determined thickness of said second layer of metal is less than a preselected value.

6. The method of claim 1, wherein depositing a first layer of metal above a structure comprises depositing a first layer of metal comprised of at least one of titanium, cobalt, nickel, tantalum, molybdenum, copper and platinum above a structure.

7. The method of claim 1, wherein depositing a second layer of metal above a structure comprises depositing a second layer of metal comprised of at least one of titanium, cobalt, nickel, tantalum, molybdenum, copper and platinum above said first metal layer.

8. The method of claim 1, wherein depositing a first layer of metal above a structure comprises performing at least one of a physical vapor deposition process, a chemical vapor deposition process and a plasma enhanced chemical vapor deposition process to deposit a first layer of metal above a structure.

9. The method of claim 1, wherein depositing a second layer of metal above a structure comprises performing at least one of a physical vapor deposition process, a chemical vapor deposition process and a plasma enhanced chemical vapor deposition process to deposit a second layer of metal above said first layer of metal.

10. The method of claim 1, wherein irradiating at least one area of said first layer of metal comprises irradiating a plurality of areas of said first layer of metal.

11. The method of claim 1, wherein irradiating at least one area of said second layer of metal comprises irradiating a plurality of areas of said second layer of metal.

12. The method of claim 1, wherein irradiating at least one area of said first layer of metal comprises irradiating at least five areas of said first layer of metal.

13. The method of claim 1, wherein irradiating at least one area of said second layer of metal comprises irradiating at least five areas of said second layer of metal.

14. The method of claim 1, wherein depositing a first layer of metal above a structure comprises depositing a first layer of metal above a gate electrode and a plurality of source/drain regions of a transistor.

15. The method of claim 1, wherein said first metal layer and said second metal layer are comprised of tantalum and copper, respectively.

16. The method of claim 1, wherein said step of depositing a second layer of metal is only performed if said thickness of said first layer of metal is within a preselected range.

17. A method, comprising:

performing at least one of a physical vapor deposition process, a chemical vapor deposition process and a plasma enhanced chemical vapor deposition process to deposit a first layer of metal comprised of at least one of titanium, cobalt, nickel, tantalum, molybdenum, copper and platinum above a patterned layer of insulating material having a plurality of openings formed therein;

irradiating at least one area of said first layer of metal;

analyzing an x-ray spectrum of x-rays leaving said irradiated area of said first layer of metal to determine a thickness of said first layer of metal;

performing at least one of a physical vapor deposition process, a chemical vapor deposition process and a plasma enhanced chemical vapor deposition process to deposit a second layer of metal above said first layer comprised of at least one of titanium, cobalt, nickel, tantalum, molybdenum, copper and platinum above a structure of metal;

irradiating at least one area of said second layer of metal; and

analyzing an x-ray spectrum of x-rays leaving said irradiated area of said second layer of metal to determine a thickness of said second layer of metal.

18. The method of claim 17, further comprising indicating an alarm condition if said determined thickness of said first layer of metal is not within a preselected range.

19. The method of claim 17, further comprising indicating an alarm condition if said determined thickness of said second layer of metal is not within a preselected range.

20. The method of claim 17, further comprising depositing additional metal material above said first layer of metal if said determined thickness of said first layer of metal is less than a preselected value.

21. The method of claim 17, further comprising depositing additional metal material above said second layer of metal if said determined thickness of said second layer of metal is less than a preselected value.

22. The method of claim 17, wherein irradiating at least one area of said first layer of metal comprises irradiating a plurality of areas of said first layer of metal.

23. The method of claim 17, wherein irradiating at least one area of said second layer of metal comprises irradiating a plurality of areas of said second layer of metal.

24. The method of claim 17, wherein irradiating at least one area of said first layer of metal comprises irradiating at least five areas of said first layer of metal.

25. The method of claim 17, wherein irradiating at least one area of said second layer of metal comprises irradiating at least five areas of said second layer of metal.

26. The method of claim 17, wherein depositing a first layer of metal above a structure comprises depositing a first layer of metal above a gate electrode and a plurality of source/drain regions of a transistor.

27. The method of claim 17, wherein said first metal layer and said second metal layer are comprised of tantalum and copper, respectively.

28. The method of claim 17, wherein said step of depositing a second layer of metal is only performed if said thickness of said first layer of metal is within a preselected range.