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Copper electroplating

  • US 6,610,192 B1
  • Filed: 11/02/2001
  • Issued: 08/26/2003
  • Est. Priority Date: 11/02/2000
  • Status: Active Grant
First Claim
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1. A method of electroplating copper on an integrated circuit substrate having ≦

  • 2 μ

    m apertures comprising the steps of contacting the substrate to be plated with a copper electroplating bath comprising one or more leveling agents; and

    subjecting the bath to a current density for a period of time sufficient to deposit a substantially planar copper layer on the substrate and fill the ≦

    2 μ

    m apertures without substantially forming defects in the ≦

    2 μ

    m apertures, wherein at least one leveling agent is a reaction product of a heterocyclic amine with an epihalohydrin.

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