Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor

• US 6,610,566 B2
• Filed: 12/05/2000
• Issued: 08/26/2003
• Est. Priority Date: 10/06/1997
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Forbes, Leonard, Noble, Wendell P.
• Primary Examiner(s): CHAUDHARI, CHANDRA P
• Application Number:
  US09/730,245
• Publication Number:
  US 20010000918A1
• Time in Patent Office: 994 Days
• Field of Search: 438/241, 438/243, 438/244, 438/386, 438/387
• US Class Current: 438/241
• CPC Class Codes: H10B 12/0383 wherein the transistor is vertical

Abstract

A circuit and method for a memory cell with a vertical transistor and a trench capacitor. The cell includes an access transistor that is formed in a pillar of a single crystal semiconductor material. The transistor has vertically aligned first and second source/drain regions and a body region. The transistor also includes a gate that is formed along a side of the pillar. A trench capacitor is also included in the cell. A first plate of the trench capacitor is formed integral with the first source/drain region. A second plate is disposed adjacent to the first plate and separated from the first plate by a gate oxide.

Claims

1. A method of forming a memory cell comprising:

forming an access transistor, comprising;

forming a pillar of semiconductor material that extends outwardly from a substrate;

forming a first source/drain region from a portion of the pillar of semiconductor material;

forming a body region from a portion of the pillar of semiconductor material, the body region being coupled to the first source/drain region;

forming a second source/drain region from a portion of the pillar of semiconductor material, the second source/drain region being coupled to the body region;

forming a trench capacitor, wherein a first plate of the trench capacitor is formed from a portion of the pillar of semiconducting material adjacent to the second source/drain region.

2. The method of claim 1, wherein forming a trench capacitor further includes forming a second plate that surrounds the first plate.

3. The method of claim 2, wherein forming a second plate that surrounds the first plate includes depositing poly-silicon around the first plate.

4. A method of forming a memory cell comprising:

forming a lower first conductivity type layer on a substrate;

forming a second conductivity type body region layer on the lower first conductivity type layer;

forming an upper first conductivity type layer on the body region layer;

removing a surrounding portion of the lower first conductivity type layer, the body region layer, and the upper first conductivity type layer to form a vertical pillar extending outward from the substrate wherein the upper first conductivity type layer forms a first source/drain region, and a portion of the lower first conductivity type layer forms a second source/drain region;

coupling a dielectric layer to a portion of the lower first conductivity type layer of the vertical pillar, the dielectric layer surrounding a first plate of a capacitor; and

depositing a conductive material around the dielectric layer to provide a second plate for the capacitor.

5. The method of claim 4, wherein depositing a conductive material includes depositing polysilicon.

6. The method of claim 4, wherein removing a surrounding portion of the lower first conductivity type layer, the body region layer, and the upper first conductivity type layer to form a vertical pillar includes forming a vertical pillar with a sub-micron width.

7. A method of forming a memory cell comprising:

forming a lower first conductivity type layer on a substrate;

forming a second conductivity type body region layer on a second conductivity type body region layer;

forming a an upper first conductivity type layer on the body region layer;

removing a surrounding portion of the lower first conductivity type layer, the body region layer, and the upper first conductivity type layer to form a vertical pillar extending outward from the substrate wherein the upper first conductivity type layer forms a first source/drain region, and

a portion of the lower first conductivity type layer forms a second source/drain region;

coupling a dielectric layer to a portion of the lower first conductivity type layer of the vertical pillar, the dielectric layer surrounding a first plate of a capacitor;

depositing a conductive material around the dielectric layer to provide a second plate for the capacitor; and

forming a contact between the second plate and an underlying semiconductor layer.

8. The method of claim 7, wherein depositing a conductive material includes depositing polysilicon.

9. The method of claim 7, wherein removing a surrounding portion of the lower first conductivity type layer, the body region layer, and the upper first conductivity type layer to form a vertical pillar includes forming a vertical pillar with a sub-micron width.

10. A method of forming a memory device comprising:

forming a number of access transistors, each comprising;

forming a pillar of semiconductor material that extends outwardly from a substrate;

forming a first source/drain region from a portion of the pillar of semiconductor material;

forming a body region from a portion of the pillar of semiconductor material, the body region being coupled to the first source/drain region;

forming a second source/drain region from a portion of the pillar of semiconductor material, the second source/drain region being coupled to the body region;

forming a number of bit lines that are each selectively coupled to a number of the second source/drain regions of the access transistors;

forming a number of wordlines that are each operatively located adjacent the body regions of the access transistors;

forming a row decoder coupled to the word lines, and a column decoder coupled to the bitlines; and

forming a number of trench capacitors, coupled to the number of access transistors wherein a first plate of the each trench capacitor is formed from a portion of the pillar of semiconducting material adjacent to the second source/drain region.

11. The method of claim 10, wherein forming a number of trench capacitors further includes forming a second plate that surrounds the first plate in each capacitor.

12. The method of claim 11, wherein forming a second plate that surrounds the pillar includes depositing poly-silicon around the first plate.

13. A method of forming a memory device comprising:

forming a first conductivity type first source/drain region layer on a substrate;

forming a second conductivity type body region layer on the first source/drain region layer;

forming a first conductivity type second source/drain region layer on the body region layer;

forming a number of substantially parallel column isolation trenches extending through the second source/drain region layer, the body region layer, and the first source/drain region layer, thereby forming column bars between the column isolation trenches;

forming a plurality of substantially parallel row isolation trenches, orthogonal to the column isolation trenches, extending to substantially the same depth as the column isolation trenches, thereby forming an array of vertical access transistors for the memory array;

depositing a dielectric layer within the row and column isolation trenches;

filling the row and column isolation trenches with a conductive material to a level that does not exceed the lower level of the body region so as to provide a common plate for capacitors of memory cells of the memory array;

forming conductive word lines in the row isolation trenches that selectively interconnect access transistors on each row;

forming bit lines that selectively interconnect the second source/drain regions of the access transistors on each column; and

forming a row decoder coupled to the word lines, and a column decoder coupled to the bitlines.

14. The method of claim 13, wherein filling the surrounding portion with a conductive material includes filling the surrounding portion with polysilicon.

15. The method of claim 13, wherein removing a surrounding portion of the first source/drain region layer, the body region layer, and the second source/drain region layer to form a vertical pillar includes forming a vertical pillar with a sub-micron width.

16. The method of claim 13, wherein forming conductive word lines includes concurrently forming a number of gates adjacent to the body region layer.

17. A method of forming a memory device comprising:

forming a first conductivity type first source/drain region layer on a substrate;

forming a second conductivity type body region layer on the first source/drain region layer;

forming a first conductivity type second source/drain region layer on the body region layer;

forming a number of substantially parallel column isolation trenches extending through the second source/drain region layer, the body region layer, and the first source/drain region layer, thereby forming column bars between the column isolation trenches;

forming a plurality of substantially parallel row isolation trenches, orthogonal to the column isolation trenches, extending to substantially the same depth as the column isolation trenches, thereby forming an array of vertical access transistors for the memory array;

depositing a dielectric layer within the row and column isolation trenches to a level that does not exceed the lower level of the body region;

filling the row and column isolation trenches with a conductive material to a level that does not exceed the lower level of the body region so as to provide a common plate for capacitors of memory cells of the memory array;

forming a contact between the common plate and an underlying semiconductor layer;

forming conductive word lines in the row isolation trenches that selectively interconnect access transistors on each row;

forming bit lines that selectively interconnect the second source/drain regions of the access transistors on each column; and

forming a row decoder coupled to the word lines, and a column decoder coupled to the bitlines.

18. The method of claim 17, wherein filling the surrounding portion with a conductive material includes filling the surrounding portion with polysilicon.

19. The method of claim 17, wherein removing a surrounding portion of the first source/drain region layer, the body region layer, and the second source/drain region layer to form a vertical pillar includes forming a vertical pillar with a sub-micron width.

20. The method of claim 17, wherein forming conductive word lines includes concurrently forming a number of gates adjacent to the body region layer.

21. A method of forming a memory device comprising:

forming a first conductivity type first source/drain region layer on a substrate;

forming a second conductivity type body region layer on the first source/drain region layer;

forming a first conductivity type second source/drain region layer on the body region layer;

forming a number of substantially parallel column isolation trenches extending through the second source/drain region layer, the body region layer, and the first source/drain region layer, thereby forming column bars between the column isolation trenches;

forming a plurality of substantially parallel row isolation trenches, orthogonal to the column isolation trenches, extending to substantially the same depth as the column isolation trenches, thereby forming an array of vertical access transistors for the memory array;

depositing a dielectric layer within the row and column isolation trenches;

filling the row and column isolation trenches with a conductive material to a level that does not exceed the lower level of the body region so as to provide a common plate for capacitors of memory cells of the memory array;

forming conductive word lines in the row isolation trenches that selectively interconnect access transistors on each row, wherein the conductive wordlines are formed to a width that is less than a minimum lithographic feature size F used to form the column isolation trenches and the row isolation trenches;

forming bit lines that selectively interconnect the second source/drain regions of the access transistors on each column; and

forming a row decoder coupled to the word lines, and a column decoder coupled to the bitlines.

22. The method of claim 21, wherein filling the surrounding portion with a conductive material includes filling the surrounding portion with polysilicon.

23. The method of claim 21, wherein removing a surrounding portion of the first source/drain region layer, the body region layer, and the second source/drain region layer to form a vertical pillar includes forming a vertical pillar with a sub-micron width.

24. The method of claim 21, wherein forming conductive word lines includes concurrently forming a number of gates adjacent to the body region layer.