Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor
First Claim
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1. A method of forming a memory cell comprising:
- forming an access transistor, comprising;
forming a pillar of semiconductor material that extends outwardly from a substrate;
forming a first source/drain region from a portion of the pillar of semiconductor material;
forming a body region from a portion of the pillar of semiconductor material, the body region being coupled to the first source/drain region;
forming a second source/drain region from a portion of the pillar of semiconductor material, the second source/drain region being coupled to the body region;
forming a trench capacitor, wherein a first plate of the trench capacitor is formed from a portion of the pillar of semiconducting material adjacent to the second source/drain region.
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Abstract
A circuit and method for a memory cell with a vertical transistor and a trench capacitor. The cell includes an access transistor that is formed in a pillar of a single crystal semiconductor material. The transistor has vertically aligned first and second source/drain regions and a body region. The transistor also includes a gate that is formed along a side of the pillar. A trench capacitor is also included in the cell. A first plate of the trench capacitor is formed integral with the first source/drain region. A second plate is disposed adjacent to the first plate and separated from the first plate by a gate oxide.
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Citations
24 Claims
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1. A method of forming a memory cell comprising:
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forming an access transistor, comprising;
forming a pillar of semiconductor material that extends outwardly from a substrate;
forming a first source/drain region from a portion of the pillar of semiconductor material;
forming a body region from a portion of the pillar of semiconductor material, the body region being coupled to the first source/drain region;
forming a second source/drain region from a portion of the pillar of semiconductor material, the second source/drain region being coupled to the body region;
forming a trench capacitor, wherein a first plate of the trench capacitor is formed from a portion of the pillar of semiconducting material adjacent to the second source/drain region. - View Dependent Claims (2, 3)
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4. A method of forming a memory cell comprising:
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forming a lower first conductivity type layer on a substrate;
forming a second conductivity type body region layer on the lower first conductivity type layer;
forming an upper first conductivity type layer on the body region layer;
removing a surrounding portion of the lower first conductivity type layer, the body region layer, and the upper first conductivity type layer to form a vertical pillar extending outward from the substrate wherein the upper first conductivity type layer forms a first source/drain region, and a portion of the lower first conductivity type layer forms a second source/drain region;
coupling a dielectric layer to a portion of the lower first conductivity type layer of the vertical pillar, the dielectric layer surrounding a first plate of a capacitor; and
depositing a conductive material around the dielectric layer to provide a second plate for the capacitor. - View Dependent Claims (5, 6)
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7. A method of forming a memory cell comprising:
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forming a lower first conductivity type layer on a substrate;
forming a second conductivity type body region layer on a second conductivity type body region layer;
forming a an upper first conductivity type layer on the body region layer;
removing a surrounding portion of the lower first conductivity type layer, the body region layer, and the upper first conductivity type layer to form a vertical pillar extending outward from the substrate wherein the upper first conductivity type layer forms a first source/drain region, and a portion of the lower first conductivity type layer forms a second source/drain region;
coupling a dielectric layer to a portion of the lower first conductivity type layer of the vertical pillar, the dielectric layer surrounding a first plate of a capacitor;
depositing a conductive material around the dielectric layer to provide a second plate for the capacitor; and
forming a contact between the second plate and an underlying semiconductor layer. - View Dependent Claims (8, 9)
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10. A method of forming a memory device comprising:
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forming a number of access transistors, each comprising;
forming a pillar of semiconductor material that extends outwardly from a substrate;
forming a first source/drain region from a portion of the pillar of semiconductor material;
forming a body region from a portion of the pillar of semiconductor material, the body region being coupled to the first source/drain region;
forming a second source/drain region from a portion of the pillar of semiconductor material, the second source/drain region being coupled to the body region;
forming a number of bit lines that are each selectively coupled to a number of the second source/drain regions of the access transistors;
forming a number of wordlines that are each operatively located adjacent the body regions of the access transistors;
forming a row decoder coupled to the word lines, and a column decoder coupled to the bitlines; and
forming a number of trench capacitors, coupled to the number of access transistors wherein a first plate of the each trench capacitor is formed from a portion of the pillar of semiconducting material adjacent to the second source/drain region. - View Dependent Claims (11, 12)
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13. A method of forming a memory device comprising:
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forming a first conductivity type first source/drain region layer on a substrate;
forming a second conductivity type body region layer on the first source/drain region layer;
forming a first conductivity type second source/drain region layer on the body region layer;
forming a number of substantially parallel column isolation trenches extending through the second source/drain region layer, the body region layer, and the first source/drain region layer, thereby forming column bars between the column isolation trenches;
forming a plurality of substantially parallel row isolation trenches, orthogonal to the column isolation trenches, extending to substantially the same depth as the column isolation trenches, thereby forming an array of vertical access transistors for the memory array;
depositing a dielectric layer within the row and column isolation trenches;
filling the row and column isolation trenches with a conductive material to a level that does not exceed the lower level of the body region so as to provide a common plate for capacitors of memory cells of the memory array;
forming conductive word lines in the row isolation trenches that selectively interconnect access transistors on each row;
forming bit lines that selectively interconnect the second source/drain regions of the access transistors on each column; and
forming a row decoder coupled to the word lines, and a column decoder coupled to the bitlines. - View Dependent Claims (14, 15, 16)
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17. A method of forming a memory device comprising:
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forming a first conductivity type first source/drain region layer on a substrate;
forming a second conductivity type body region layer on the first source/drain region layer;
forming a first conductivity type second source/drain region layer on the body region layer;
forming a number of substantially parallel column isolation trenches extending through the second source/drain region layer, the body region layer, and the first source/drain region layer, thereby forming column bars between the column isolation trenches;
forming a plurality of substantially parallel row isolation trenches, orthogonal to the column isolation trenches, extending to substantially the same depth as the column isolation trenches, thereby forming an array of vertical access transistors for the memory array;
depositing a dielectric layer within the row and column isolation trenches to a level that does not exceed the lower level of the body region;
filling the row and column isolation trenches with a conductive material to a level that does not exceed the lower level of the body region so as to provide a common plate for capacitors of memory cells of the memory array;
forming a contact between the common plate and an underlying semiconductor layer;
forming conductive word lines in the row isolation trenches that selectively interconnect access transistors on each row;
forming bit lines that selectively interconnect the second source/drain regions of the access transistors on each column; and
forming a row decoder coupled to the word lines, and a column decoder coupled to the bitlines. - View Dependent Claims (18, 19, 20)
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21. A method of forming a memory device comprising:
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forming a first conductivity type first source/drain region layer on a substrate;
forming a second conductivity type body region layer on the first source/drain region layer;
forming a first conductivity type second source/drain region layer on the body region layer;
forming a number of substantially parallel column isolation trenches extending through the second source/drain region layer, the body region layer, and the first source/drain region layer, thereby forming column bars between the column isolation trenches;
forming a plurality of substantially parallel row isolation trenches, orthogonal to the column isolation trenches, extending to substantially the same depth as the column isolation trenches, thereby forming an array of vertical access transistors for the memory array;
depositing a dielectric layer within the row and column isolation trenches;
filling the row and column isolation trenches with a conductive material to a level that does not exceed the lower level of the body region so as to provide a common plate for capacitors of memory cells of the memory array;
forming conductive word lines in the row isolation trenches that selectively interconnect access transistors on each row, wherein the conductive wordlines are formed to a width that is less than a minimum lithographic feature size F used to form the column isolation trenches and the row isolation trenches;
forming bit lines that selectively interconnect the second source/drain regions of the access transistors on each column; and
forming a row decoder coupled to the word lines, and a column decoder coupled to the bitlines. - View Dependent Claims (22, 23, 24)
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Specification