Reference cells for TCCT based memory cells
First Claim
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1. A reference cell for determining a state stored in a memory cell, comprising:
- a voltage source comprising a NDR device;
a first resistive element coupled between the voltage source and a bit line and having a first resistance; and
a second resistive element coupled between a sink and the bit line and having a second resistance.
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Abstract
A reference cell produces a voltage rise on a bit line that is proportional to, and preferably half of, the voltage rise on another bit line produced by a TCCT based memory cell in an “on” state. The reference cell includes an NDR device, a gate-like device disposed adjacent to the NDR device, a first resistive element coupled between the NDR device and the bit line, and a second resistive element coupled between a sink and the bit line. Resistances of the first and second resistive elements are about equal and about twice as much as the resistance of a pass transistor of the a TCCT based memory cell.
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Citations
39 Claims
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1. A reference cell for determining a state stored in a memory cell, comprising:
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a voltage source comprising a NDR device;
a first resistive element coupled between the voltage source and a bit line and having a first resistance; and
a second resistive element coupled between a sink and the bit line and having a second resistance. - View Dependent Claims (2, 3)
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4. A reference cell for determining a state stored in a memory cell, comprising:
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a voltage source comprising a SRAM memory cell;
a first resistive element coupled between the voltage source and a bit line and having a first resistance; and
a second resistive element coupled between a sink and the bit line and having a second resistance.
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5. A reference cell for determining a state stored in a memory cell, comprising:
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a voltage source comprising a MRAM memory cell;
a first resistive element coupled between the voltage source and a bit line and having a first resistance; and
a second resistive element coupled between a sink and the bit line and having a second resistance.
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6. A reference cell for determining a state stored in a memory cell, comprising:
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a voltage source comprising a memory cell with floating gate;
a first resistive element coupled between the voltage source and a bit line and having a first resistance; and
a second resistive element coupled between a sink and the bit line and having a second resistance.
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7. A reference cell for determining a state stored in a memory cell, comprising:
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a voltage source;
a first transistor coupled between the voltage source and a bit line and having a first resistance; and
a second transistor coupled between a sink and the bit line and having a second resistance;
wherein both the first and the second transistors include a gate coupled to a word line.
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8. A reference cell for determining a state stored in a memory cell, comprising:
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a voltage source;
a first resistive element coupled between the voltage source and a bit line and having a first resistance; and
a second resistive element coupled between a sink and the bit line and having a second resistance;
wherein the first resistive element includes two transistors coupled in series.
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9. A reference cell for determining a state stored in a memory cell, comprising:
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a voltage source;
a first resistive element coupled between the voltage source and a bit line and having a first resistance; and
a second resistive element coupled between a sink and the bit line and having a second resistance;
wherein the second resistive element includes two transistors coupled in series.
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10. A memory device, comprising:
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a memory cell configured to generate a first voltage on a first bit line and including a switching device having a first resistance;
a reference cell configured to generate a second voltage on a second bit line and including a voltage source;
a first resistive element coupled between the voltage source and the second bit line and having a second resistance;
a second resistive element coupled between a sink and the second bit line and having a third resistance. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A memory array, comprising:
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a plurality of memory cells, each memory cell configured to generate a first voltage on one of a plurality of bit lines and including a switching device having a first resistance;
a reference cell configured to generate a second voltage on another of the plurality of bit lines and including a voltage source;
a first resistive element coupled between the voltage source and the another of the plurality of bit lines and having a second resistance;
a second resistive element coupled between a sink and the another of the plurality of bit lines and having a third resistance. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A method for reading a state of a memory cell, comprising:
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applying a first voltage to the memory cell and a reference cell;
coupling the memory cell to a first bit line and connecting the reference cell to a second bit line;
raising a memory voltage on the first bit line;
raising on the second bit line a reference voltage that rises proportionally to the memory voltage; and
sensing a difference between the memory voltage and the reference voltage. - View Dependent Claims (35, 36, 37, 38, 39)
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Specification