Multi-phasic microphotodiode retinal implant and adaptive imaging retinal stimulation system

• US 6,611,716 B2
• Filed: 04/02/2001
• Issued: 08/26/2003
• Est. Priority Date: 06/06/1995
• Status: Expired due to Term

• Current Assignee: Pixium Vision SA
• Original Assignee: Optobionics Corporation
• Inventors: Chow, Alan Y., Chow, Vincent
• Primary Examiner(s): Schaetzle, Kennedy
• Application Number:
  US09/824,519
• Publication Number:
  US 20020087202A1
• Time in Patent Office: 876 Days
• Field of Search: 607/54, 607/1, 607/53, 607/116, 607/148, 623/4.1
• US Class Current: 607/54
• CPC Class Codes: A61F 9/08 Devices or methods enabling eye-patients to replace direct visual perception by another kind of perception
• CPC Class Codes: A61N 1/05 for implantation or insertion into the body, e.g. heart electrode A61N1/06 takes precedence
• CPC Class Codes: A61N 1/0543 Retinal electrodes
• CPC Class Codes: A61N 1/36046 of the eye

Abstract

An artificial retina device and a method for stimulating and modulating its function is disclosed. The artificial retina device is comprised of plural multi-phasic microphotodiode subunits. In persons suffering from blindness due to outer retinal layer damage, a plurality of such devices, when surgically implanted into the subretinal space, may allow useful formed artificial vision to develop. One device, called a MMRI-4, transduces light into electric currents to stimulate the retina. The four microphotodiode subunits of the MMRI-4 are oriented so that each flattened sides of the MMRI-4 has two subunits in a PiN configuration and two subunits in a NiP configuration. The flattened cubic shape of the MMRI-4 will allow one or the other of the two flattened sides to be preferentially directed toward incident light when implanted in the subretinal space. Because both the PiN and NiP configurations are present on each of the flattened sides of the MMRI-4, electric currents which produce the sensation of light from a PiN current, or darkness from a NiP current, can be induced regardless of which the flattened photoactive sides faces incident light. Filter layers disposed on the PiN configuration will allow visible light to induce a PiN current, and filter layers disposed on the NiP configuration will allow infrared light to induce a NiP current. By projecting real or computer controlled visible light images, and computer controlled infrared light images or illumination, simultaneously or in rapid alternation onto the MMRI-4s, the nature of induced retinal images may be modulated and improved. An Adaptive Imaging Retinal Stimulation System (AIRES), with a Projection and Tracking Optical System (PTOS), which may be worn as a headset is used for this purpose, and is also disclosed. Color images may even be induced by programming the stimulating pulse durations and frequencies of the AIRES system. By creating both PiN and NiP currents, in close spatial positions and temporal sequences, electrolysis damage to cellular tissue from prolonged unidirectional electric currents is reduced. MMRI-4s may also be embedded in a flexible, biologically compatible sheet, with its electrodes exposed on both surfaces of the sheet. This sheet is then implanted on the nerve fiber layer surface of the retina, where electrical stimulation can also induce a form of artificial vision.

Claims

1. A retinal implant for electrically inducing vision in an eye, the retinal implant comprising:

at least one photosensitive element electrically responsive to incident light, the at least one photosensitive element having a first side responsive to a first bandwidth of light to generate a positive polarity current and a second side responsive to a second bandwidth of light to generate a negative polarity current, wherein the at least one photosensitive element is adapted to contact retinal cells.

2. The retinal implant of claim 1 wherein the at least one photosensitive element comprises an array of photosensitive elements.

3. The retinal implant of claim 2 wherein each photosensitive element in the array of photosensitive elements comprises a photodiode.

4. The retinal implant of claim 1 wherein the at least one photosensitive element comprises a PiN microphotodiode and wherein the first side comprises a P-side and the second side comprises an N-side.

5. The retinal implant of claim 4 wherein the P-side comprises a first light filter layer that selectively permits the first bandwidth of light to pass and the N-side comprises a second light filter layer that selectively permits the second bandwidth to pass.

6. The retinal implant of claim 5 wherein the second light filter layer is a dielectric filter that allows 740 nm to 900 nm to pass.

7. The retinal implant of claim 6 wherein the first light filter layer is a dielectric filter that allows 740 nm to 900 nm to pass.

8. The retinal implant of claim 5 wherein the second light filter layer is a dielectric filter that allows 400 nm to 740 nm to pass.

9. The retinal implant of claim 8 wherein the first light filter layer is a dielectric filter that allows 400 nm to 740 nm to pass.

10. The retinal implant of claim 1 wherein the second side of the at least one photosensitive element is arranged opposite the first side.

11. The retinal implant of claim 1 wherein the first bandwidth and the second bandwidth differ.

12. The retinal implant of claim 11 wherein the photosensitive element comprises a first electrode associated with the first side and a second electrode associated with the second side.

13. A retinal implant for electrically inducing vision in an eye, the retinal implant comprising:

a plurality of photosensitive subunits, each of the photosensitive subunits comprising at least one pair of photosensitive elements, each of the at least one pair of photosensitive elements having a first side configured to generate a positive electric current in response to incident light of a first bandwidth and a second side configured to generate a negative electric current in response to incident light of a second bandwidth, wherein the first side of a first photosensitive element of the pair is aligned with the second side of a second photosensitive element of the pair and the second side of the first photo sensitive element is aligned with the first side of the second photosensitive element.

14. The retinal implant of claim 13 wherein each photosensitive element in comprises a photodiode.

15. The retinal implant of claim 14 wherein each photodiode comprises a PiN microphotodiode and wherein the first side comprises a P-side and the second side comprises an N-side.

16. The retinal implant of claim 15 wherein the P-side comprises a first light filter layer that selectively permits the first bandwidth of light to pass and the N-side comprises a second light filter layer that selectively permits the second bandwidth to pass.

17. The retinal implant of claim 13 wherein the second side of each photosensitive element is arranged opposite the first side.

18. The retinal implant of claim 13 wherein the first bandwidth and the second bandwidth differ.

19. The retinal implant of claim 13 wherein each photosensitive element comprises a first electrode associated with the first side and a second electrode associated with the second side.

20. The retinal implant of claim 19 wherein the first electrode of the first photosensitive element is integrally formed with the second electrode of the second photosensitive element.