Atomic layer controlled deposition on particle surfaces

• US 6,613,383 B1
• Filed: 06/21/2000
• Issued: 09/02/2003
• Est. Priority Date: 06/21/1999
• Status: Expired due to Term

• Current Assignee: Hyundai Electronics Industries Co. Ltd. (SK Hynix Inc.), The Board of Regents of the University of Colorado (University of Colorado System)
• Original Assignee: The Board of Regents of the University of Colorado (University of Colorado System)
• Inventors: Weimer, Alan W., George, Steven M., Ferguson, John D.
• Primary Examiner(s): KILIMAN, LESZEK B
• Application Number:
  US09/602,602
• Time in Patent Office: 1,168 Days
• Field of Search: 428/402, 428/403, 428/404, 427/215, 427/216, 427/218, 427/212, 427/213
• US Class Current: 427/212
• CPC Class Codes: B01J 2/006 Coating of the granules without description of the process or the device by which the granules are obtained to prevent the granules sticking together B01J2/30
• CPC Class Codes: B22F 1/16 Metallic particles coated with a non-metal coated with lubricating or binding agents or with organic material B22F1/10
• CPC Class Codes: C04B 14/322 Carbides
• CPC Class Codes: C04B 14/325 Nitrides
• CPC Class Codes: C04B 20/1066 Oxides, Hydroxides
• CPC Class Codes: C04B 2235/3225 Yttrium oxide or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3244 Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3821 Boron carbides
• CPC Class Codes: C04B 2235/3839 Refractory metal carbides
• CPC Class Codes: C04B 2235/3843 Titanium carbides
• CPC Class Codes: C04B 2235/3847 Tungsten carbides
• CPC Class Codes: C04B 2235/386 Boron nitrides
• CPC Class Codes: C04B 2235/3865 Aluminium nitrides
• CPC Class Codes: C04B 2235/3873 Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
• CPC Class Codes: C04B 2235/444 Halide containing anions, e.g. bromide, iodate, chlorite
• CPC Class Codes: C04B 2235/446 Sulfides, tellurides or selenides
• CPC Class Codes: C04B 35/581 based on aluminium nitride
• CPC Class Codes: C04B 35/583 based on boron nitride
• CPC Class Codes: C04B 35/584 based on silicon nitride
• CPC Class Codes: C04B 35/628 Coating the powders or the macroscopic reinforcing agents
• CPC Class Codes: C04B 35/62807 : Silica or silicates
• CPC Class Codes: C04B 35/62813 : Alumina or aluminates
• CPC Class Codes: C04B 35/62815 : Rare earth metal oxides
• CPC Class Codes: C04B 35/62821 : Titanium oxide
• CPC Class Codes: C04B 35/62828 : Non-oxide ceramics
• CPC Class Codes: C04B 35/62831 : Carbides
• CPC Class Codes: C04B 35/62836 : Nitrides
• CPC Class Codes: C04B 35/62842 : Metals
• CPC Class Codes: C04B 35/62884 : by gas phase techniques
• CPC Class Codes: C04B 35/62894 : with more than one coating layer
• CPC Class Codes: C04B 35/62897 : Coatings characterised by their thickness
• CPC Class Codes: C04B 41/009 : characterised by the material treated
• CPC Class Codes: C04B 41/4531 : by C.V.D.
• CPC Class Codes: C04B 41/4584 : Coating or impregnating of particulate or fibrous ceramic material C04B20/10, C04B35/628 take precedence
• CPC Class Codes: C04B 41/5027 : Oxide ceramics in general; Specific oxide ceramics not covered by C04B41/5029 - C04B41/5051
• CPC Class Codes: C04B 41/5031 : Alumina
• CPC Class Codes: C04B 41/5035 : Silica
• CPC Class Codes: C04B 41/81 : Coating or impregnation
• CPC Class Codes: C23C 16/4417 : Methods specially adapted for coating powder
• CPC Class Codes: C23C 16/442 : using fluidised bed process
• CPC Class Codes: C23C 16/45525 : Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45555 : applied in non-semiconductor technology
• CPC Class Codes: Y10T 428/2982 : Particulate matter [e.g., sphere, flake, etc.]
• CPC Class Codes: Y10T 428/2991 : Coated
• CPC Class Codes: Y10T 428/2993 : Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]

Abstract

Particles have an ultrathin, conformal coating are made using atomic layer deposition methods. The base particles include ceramic and metallic materials. The coatings can also be ceramic or metal materials that can be deposited in a binary reaction sequence. The coated particles are useful as fillers for electronic packaging applications, for making ceramic or cermet parts, as supported catalysts, as well as other applications.

Claims

1. A method for depositing an ultrathin conformal coating on particles comprising conducting a sequence of two or more self-limiting reactions at the surface of said particles to form an ultrathin conformal coating bonded to the surface of said particles.

2. The method of claim 1, wherein the sequence is a binary sequence of reactions represented as

3. The method of claim 2 wherein M¹ is silicon, titanium or aluminum.

4. The method of claim 2 wherein the sequence is a binary sequence of reactions represented as

5. The method of claim 2 wherein the sequence is a binary sequence of reactions represented as

 

M—

Z—

H*+M¹X_n→

M—

Z—

M¹X*+HX

6. The method of claim 1 wherein the particles are an inorganic nitride or carbide.

7. The method of claim 2 wherein the particles are an inorganic nitride or carbide.

8. The method of claim 4 wherein the particles are an inorganic nitride or carbide.

9. The method of claim 5 wherein the particles are an inorganic nitride or carbide.

10. The method of claim 1 wherein the sequence of reactions is continued until a coating of desired thickness is obtained.

11. The method of claim 10 wherein the ultrathin coating has a thickness of about 0.5 to about 35 nanometers.

12. The method of claim 1 wherein a precursor reaction is conducted to impart functional groups on the surface of the particle before conducting said sequence of reactions.

13. The method of claim 1 wherein said sequence of reactions is a sequence of catalyzed reactions.

14. The method of claim 1 wherein said sequence of reactions is a binary sequence of reactions comprising contacting said particle with alternately with a metal halide and a metal halide reducing agent.

15. The method of claim 14 wherein said metal halide is a fluoride or chloride of tungsten, rhenium, molybdenum, antimony, selenium, thallium, chromium, platinum, ruthenium, iridium, or germanium.

16. The method of claim 1 which is conducted in a fluidized bed of said particles.

17. The method of claim 1 wherein the particles have a particle size of from about 0.005 to about 100 μ

m.

18. The method of claim 1 which is an atomic layer controlled growth process.

19. The method of claim 2 which is an atomic layer controlled growth process.

20. The method of claim 4 which is an atomic layer controlled growth process.

21. The method of claim 5 which is an atomic layer controlled growth process.

22. The method of claim 4 which is an atomic layer controlled growth process.

23. The method of claim 13 which is an atomic layer controlled growth process.

24. The method of claim 16 which is an atomic layer controlled growth process.

25. The method of claim 17 which is an atomic layer controlled growth process.

26. A method for depositing an ultrathin coating on particles comprising conducting a sequence of two or more self-limiting reactions at the surface of said particles to form an ultrathin coating bonded to the surface of said particles.