Method of manufacturing a semiconductor device

• US 6,613,680 B2
• Filed: 07/19/2001
• Issued: 09/02/2003
• Est. Priority Date: 07/24/2000
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Arii, Isaku, Tohda, Toshiyuki
• Primary Examiner(s): Utech, Benjamin L.
• Assistant Examiner(s): Umez-Eronini, Lynette T.
• Application Number:
  US09/908,496
• Publication Number:
  US 20020039837A1
• Time in Patent Office: 775 Days
• Field of Search: 438/703, 438/704, 438/706, 438/720, 438/723, 438/745, 438/753
• US Class Current: 438/703
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics

Abstract

A method of manufacturing a semiconductor device provided with a first insulating film and a barrier film on a conductive region and an opening portion in the first insulating film and the barrier film, the method comprising the steps of: forming a first opening portion in the barrier film reaching the first insulating film; forming a second insulating film at least on the first insulating film in the first opening portion; and forming a second opening portion smaller than the first opening portion and reaching the conductive region by simultaneously boring a hole into the first insulating film and the second insulating film in the first opening portion.

Claims

1. A method of manufacturing a semiconductor device provided with a first insulating film and a barrier film on a conductive region and an opening portion in the first insulating film and the barrier film, the method comprising the steps of:

forming a first opening portion in the barrier film reaching the first insulating film;

forming a second insulating film at least on the first insulating film in the first opening portion; and

forming a second opening portion smaller than the first opening portion and reaching the conductive region by simultaneously boring a hole into the first insulating film and the second insulating film in the first opening portion.

2. A method according to claim 1, wherein the step of forming the first opening portion in the barrier film reaching the first insulating film is comprised of:

covering the barrier film with a third insulating film;

forming a resist pattern by using a mask for forming the second opening portion;

forming a pattern for forming the first opening portion on the third insulating film by using the resist pattern; and

forming the first opening portion in the barrier film by using the pattern for forming the first opening portion.

3. A method according to claim 1, wherein a deposit accumulated in the first opening portion during the formation of the first opening portion is removed after the formation of the first opening portion and before the formation of the second insulating film.

4. A method according to claim 1, wherein the barrier film is a film made of Al₂O₃, TiO₂, TiN, TiON, Ta₂O₅, TaSiN or SiN.

5. A method according to claim 1, wherein the first and the second opening portions are formed by dry etching.

6. A method according to claim 2, wherein the first opening portion is formed by wet etching and the second opening portion is formed by dry etching.

7. A method according to claim 1, wherein the first and the second insulating film is a silicon oxide film, a silicon nitride film, a NSG film, a BSG film, a PSG film or a BPSG film.

8. A method according to claim 2, wherein the third insulating film is a silicon oxide film, a silicon nitride film, a NSG film, a BSG film, a PSG film or a BPSG film.