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Method of manufacturing a semiconductor device

  • US 6,613,680 B2
  • Filed: 07/19/2001
  • Issued: 09/02/2003
  • Est. Priority Date: 07/24/2000
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device provided with a first insulating film and a barrier film on a conductive region and an opening portion in the first insulating film and the barrier film, the method comprising the steps of:

  • forming a first opening portion in the barrier film reaching the first insulating film;

    forming a second insulating film at least on the first insulating film in the first opening portion; and

    forming a second opening portion smaller than the first opening portion and reaching the conductive region by simultaneously boring a hole into the first insulating film and the second insulating film in the first opening portion.

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