Low dielectric constant film material, film and semiconductor device using such material

• US 6,613,834 B2
• Filed: 03/05/2001
• Issued: 09/02/2003
• Est. Priority Date: 03/29/2000
• Status: Expired due to Term

• Current Assignee: Fujitsu Semiconductor Limited (Fujitsu Limited)
• Original Assignee: Fujitsu Limited
• Inventors: Nakata, Yoshihiro, Suzuki, Katsumi, Sugiura, Iwao, Owada, Tamotsu, Yano, Ei, Fukuyama, Shun-ichi
• Primary Examiner(s): Dawson, Robert
• Assistant Examiner(s): Peng, Kuo-Liang
• Application Number:
  US09/797,865
• Publication Number:
  US 20010033026A1
• Time in Patent Office: 911 Days
• Field of Search: 525/477, 525/474, 528/31, 528/35, 556/431, 524/588, 428/477, 438/781
• US Class Current: 524/588
• CPC Class Codes: C08L 83/00 Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
• CPC Class Codes: C09D 183/04 Polysiloxanes
• CPC Class Codes: C09D 183/16 in which all the silicon atoms are connected by linkages other than oxygen atoms
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02304 formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
• CPC Class Codes: H01L 21/02362 formation of intermediate layers, e.g. capping layers or diffusion barriers
• CPC Class Codes: H01L 21/312 Organic layers, e.g. photoresist H01L21/3105, H01L21/32 take precedence; photoresists per se G03C
• CPC Class Codes: H01L 21/3121 Layers comprising organo-silicon compounds
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76834 formation of thin insulating films on the sidewalls or on top of conductors H01L21/76831 takes precedence
• CPC Class Codes: H01L 21/76835 Combinations of two or more different dielectric layers having a low dielectric constant H01L21/76832 takes precedence
• CPC Class Codes: H01L 21/76837 Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 23/53295 : Stacked insulating layers
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: Y10T 428/31663 : As siloxane, silicone or silane

Abstract

A low dielectric film forming material contains siloxane resin and polycarbosilane dissolved in solvent. By using this solution, a low dielectric film is formed which contains siloxane resin and polycarbosilane bonded to the siloxane resin. Material of a low dielectric film is provided which is suitable for inter-level insulating film material. A semiconductor device is also provided which has a low dielectric constant film and high reliability.

Claims

1. A film forming material comprising siloxane resin and polycarbosilane dissolved together, wherein said film forming material has a relative dielectric constant in a range from about 2.5 to 3.0.

2. A film forming material according to claim 1, wherein an average molecular weight of the siloxane resin is 1,000 to 500,000, and the polycarbosilane is dissolved by 10 to 300 weight parts relative to siloxane resin of 100 weight parts.

3. A film forming material according to claim 1, wherein an organic compound is further dissolved which is desorbed by heat or light, and an amount of the organic compound is 10 to 70 weight % relative to a mixture of the siloxane resin and the polycarbosilane.

4. A film forming material comprising 100 weight parts of siloxane resin and 10 to 300 weight parts of polycarbosilane dissolved in solvent, wherein the siloxane resin is expressed by a general chemical formula of:

(R₁ to R₃, represent hydrogen, oxygen or a monovalent hydrocarbon group, X represents hydrogen or silicon, and n₁ is an integer of 5 to 200, wherein if R₁ to R₃ are oxygen, the group X is bonded to the oxygen atoms, and if X is Si, a main chain (—

Si—

O—

) extends from the Si atom), or;

(R₄ to R₇ represent hydrogen, fluorine or a monovalent hydrocarbon group, n₂ is an integer of 5 to 100, wherein at least one of R₄ to R₇ is hydrogen), and the polycarbosilane is expressed by a general chemical formula of;

(R₈ and R₉ represent hydrogen or a monovalent hydrocarbon group, and m is an integer of 20 to

     1000), and said film forming material has a relative dielectric constant in a range from about 2.5 to 3.0.

5. A film forming material according to claim 4, wherein an organic compound is further dissolved which is desorbed by heat or light, and an amount of the organic compound is 10 to 70 weight % relative to a mixture of the siloxane resin and the polycarbosilane.

6. A film containing siloxane resin and polycarbosilane bonded to the siloxane resin, wherein said film has a relative dielectric constant in a range from about 2.5 to 3.0.