Tandem Si-Ge solar cell with improved conversion efficiency

• US 6,613,974 B2
• Filed: 12/21/2001
• Issued: 09/02/2003
• Est. Priority Date: 12/21/2001
• Status: Active Grant

• Current Assignee: Micrel Incorporated (Microchip Technology Incorporated)
• Original Assignee: Micrel Incorporated (Microchip Technology Incorporated)
• Inventors: Husher, John Durbin
• Primary Examiner(s): DIAMOND, ALAN D
• Application Number:
  US10/029,205
• Publication Number:
  US 20030116187A1
• Time in Patent Office: 620 Days
• Field of Search: 136/255, 136/261, 136/252, 136/249, 136/246, 136/259, 257/436, 257/461, 257/443, 438/71, 438/73, 438/74, 438/57, 438/526, 438/548, 438/559
• US Class Current: 136/255
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/028 including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H01L 31/0687 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/1812 including only AIVBIV alloys, e.g. SiGe
• CPC Class Codes: Y02E 10/544 Solar cells from Group III-V materials
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

P-type and n-type regions are defined in the first surface of a substrate upon which is formed an epitaxial layer of preferably Si—Ge material, preferably capped by Si material. During epitaxy formation, dopant in the defined regions diffuses down to form p-type and n-type junctions in the Si material, and diffuses up to form p-type and n-type junctions in the Si—Ge epitaxial material. Si junctions are buried beneath the surface and are surface recombination velocity effects are reduced. Photon energy striking the second substrate surface generates electron-hole pairs that experience the high bandgap of the Si materials and the low bandgap of the Si—Ge epitaxy. The tandem structure absorbs photon energy from about 0.6 eV to about 3.5 eV and exhibits high conversion efficiency.

Claims

1. A method of forming a solar cell, comprising the following steps:

(a) providing a substrate having a first light-receiving surface and a second surface;

(b) forming in said substrate, adjacent said second surface, regions of n-type dopant and regions of p-type dopant; and

(c) forming over said second surface a layer of epitaxial material, said epitaxial material having a bandgap smaller than a bandgap of said substrate;

wherein formation of said layer of epitaxial material produces diffusion of said n-type dopant and said p-type dopant upward into said layer of epitaxial material and downward into said substrate.

2. The method of claim 1, wherein step (a) includes providing a Si substrate having a bandgap of about 1.1 eV.

3. The method of claim 2, wherein step (a) includes providing high resistivity n-type Si for said substrate.

4. The method of claim 1, wherein step (b) includes diffusing at least one dopant selected from phosphorus and boron.

5. The method of claim 1, wherein step (c) includes forming a Si—

Ge epitaxial layer having a bandgap of about 0.6 eV.

6. The method of claim 1, wherein step (c) is carried out in a single fabrication step that includes forming said layer of epitaxial material as a Si—

Ge epitaxial layer and further includes forming a cap layer of Si material substantially over said Si—

Ge epitaxial layer.

7. The method of claim 1, wherein during use of said solar cell, photon energy entering said first light-receiving surface of said substrate generates electrical current that is collectable from junctions formed from at least one of (i) junctions formed in said substrate and (ii) junctions formed in said layer of epitaxial material.

8. The method of claim 1, wherein during use of said solar cell, photon energy entering said first light-receiving surface of said substrate generates electrical current that is collectable from junctions formed in said substrate and from junctions formed in said layer of epitaxial material.

9. The method of claim 1, wherein step (c) includes forming said layer of epitaxial material from Si.

10. The method of claim 1, wherein said solar cell exhibits on open circuit Voc of about 0.6 V.

11. The method of claim 1, wherein said solar cell absorbs substantial photon energy over a range of about 0.6 eV to at least 1.1 eV.

12. The method of claim 1, wherein said solar cell absorbs substantial photon energy over a range of about 0.6 eV to about 3.5 eV.

13. A method of forming a solar cell, comprising the following steps:

(a) providing an n-type Si substrate having a first light-receiving surface and a second surface;

(b) forming in said substrate, adjacent said second surface, regions of n-type dopant and regions of p-type dopant; and

(c) forming over said second surface a layer of Si—

Ge epitaxial material such that forming said layer diffuses said n-type dopant and said p-type dopant into said layer of epitaxial material and into said substrate.

14. The method of claim 13, wherein step (a) includes providing a Si substrate having a bandgap of about 1.1 eV.

15. The method of claim 13, wherein step (b) includes diffusing at least one dopant selected from phosphorus and boron.

16. The method of claim 13, wherein step (c) is carried out in a single fabrication step that also includes forming a cap layer of Si material over said layer of Si—

Ge epitaxial material.

17. The method of claim 13, wherein during use of said solar cell, photon energy entering said first light-receiving surface of said substrate generates electrical current that is collectible from junctions formed from at least one of (i) junctions formed in said substrate and (ii) junctions formed in said layer of epitaxial material.

18. The method of claim 13, wherein during use of said solar cell, photon energy entering said first light-receiving surface of said substrate generates electrical current that is collectible from junctions formed in said substrate and from junctions formed in said layer of epitaxial material.

19. The method of claim 13, wherein said solar cell exhibits on open circuit Voc of about 0.6 V.

20. The method of claim 13, wherein said solar cell absorbs substantial photon energy over a range of about 0.6 eV to at least 1.1 eV.

21. The method of claim 13, wherein said solar cell absorbs substantial photon energy over a range of about 0.6 eV to about 3.5 eV.

22. A solar cell, comprising:

a substrate having a first light receiving surface and a second, opposite, surface;

n-type dopant regions and p-type dopant regions formed adjacent said second surface of said substrate;

a layer of epitaxial material formed on said second surface, wherein forming said layer of epitaxial material diffuses said n-type dopant and said p-type dopant into said substrate and into said layer of epitaxial material, said epitaxial material having a bandgap smaller than a bandgap of said substrate;

wherein n-type and p-type junctions are formed in said substrate and in said layer of epitaxial material; and

means for collecting current from at least some junctions in said substrate material and from at least some junctions in said layer of epitaxial material.

23. The solar cell of claim 22, wherein said junctions are formed substantially simultaneously in said substrate and in said layer of epitaxial material.

24. The solar cell of claim 22, wherein said substrate is Si.

25. The solar cell of claim 22, wherein said substrate is high resistivity n-type Si.

26. The solar cell of claim 22, wherein said layer of epitaxial material is Si—

Ge.

27. The solar cell of claim 22, wherein said layer of epitaxial material is Si—

Ge, and further including a cap layer of Si material formed over said layer of epitaxial material.

28. The solar cell of claim 22, wherein said layer of epitaxial material is Si.

29. The solar cell of claim 22, wherein said solar cell exhibits an open circuit Voc of about 0.6 V.

30. The solar cell of claim 22, wherein said solar cell absorbs substantial photon energy over a range of about 0.6 eV to at least 1.1 eV.

31. The solar cell of claim 22, wherein said solar cell absorbs substantial photon energy over a range of about 0.6 eV to about 3.5 eV.