Sealed organic optoelectronic structures

• US 6,614,057 B2
• Filed: 02/07/2001
• Issued: 09/02/2003
• Est. Priority Date: 02/07/2001
• Status: Expired due to Term

• Current Assignee: Universal Display Corporation
• Original Assignee: Universal Display Corporation
• Inventors: Urbanik, Kenneth L., Silvernail, Jeffrey Alan
• Primary Examiner(s): CRANE, SARA W
• Application Number:
  US09/778,346
• Publication Number:
  US 20020125484A1
• Time in Patent Office: 937 Days
• Field of Search: 257/79, 257/100, 257/40, 257/99, 313/504, 313/506, 313/512, 428/76, 428/690, 428/917, 264/272.17
• US Class Current: 257/99
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 31/048 Encapsulation of modules
• CPC Class Codes: H01L 31/049 Protective back sheets
• CPC Class Codes: H10K 19/901 Assemblies of multiple devices comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/8445 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: H10K 59/8722 Peripheral sealing arrangements, e.g. adhesives, sealants
• CPC Class Codes: H10K 59/8723 Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
• CPC Class Codes: H10K 59/8731 multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

An organic optoelectronic device structure is provided. The structure comprises the following: (a) an organic optoelectronic device selected from an organic light emitting diode, an organic electrochromic display, an organic photovoltaic device and an organic thin film transistor; (b) first and second barrier layers, at least one of the first and second barrier layers permitting transmission of light between the an outer environment and the organic optoelectronic device; (c) a sealing region disposed between the first and second barrier layers, the sealing region cooperating with the first and second barrier layers to enclose the optoelectronic device and restrict transmission of water and oxygen from an outer environment to the optoelectronic device, the sealing region also having at least one associated material that is harmful to the optoelectronic device; and (d) a blocking region disposed between the first and second barrier layers and disposed between the sealing region and the optoelectronic device, the blocking region restricting transmission of the at least one associated material from the sealing region to the optoelectronic device.

Claims

1. An organic optoelectronic device structure comprising:

an organic optoelectronic device selected from an organic light emitting diode, an organic electrochromic display, an organic photovoltaic device and an organic thin film transistor;

first and second barrier layers, at least one of said first and second barrier layers permitting transmission of light between an outer environment and said organic optoelectronic device;

a sealing region disposed between said first and second baffler layers, said sealing region cooperating with said first and second barrier layers to enclose said optoelectronic device and restrict transmission of water and oxygen from an outer environment to said optoelectronic device, said sealing region comprising an associated material that is harmful to said optoelectronic device, and said sealing region being formed of a material that undergoes a fluid-to-solid phase transformation; and

a blocking region disposed between said first and second barrier layers and disposed between said sealing region and said optoelectronic device, said blocking region restricting transmission of said associated material from said sealing region to said optoelectronic device.

2. The organic optoelectronic device structure of claim 1, wherein said sealing region is a low viscosity epoxy.

3. The organic optoelectronic device structure of claim 1, wherein said sealing region is a solder region and said associated material comprises solder flux.

4. The organic optoelectronic device structure of claim 1, wherein said sealing region is a two-part epoxy region and said associated material comprises gas released from said epoxy.

5. The organic optoelectronic device structure of claim 1, wherein said blocking region is a curable liquid adhesive.

6. The organic optoelectronic device structure of claim 5, wherein said curable liquid adhesive is a thermally curable epoxy material.

7. The organic optoelectronic device structure of claim 5, wherein said curable liquid adhesive is an ultraviolet-curable epoxy material.

8. The organic optoelectronic device structure of claim 1, wherein said blocking region is a solid adhesive composition.

9. The organic optoelectronic device structure of claim 8, wherein said solid adhesive composition is a two-sided adhesive tape.

27. The organic optoelectronic device structure of claim 1, wherein said sealing region and said blocking region are in the form of bands between said first and second barrier layer.

10. An OLED device structure comprising:

an OLED;

first and second barrier layers, at least one of said first and second barrier layers permitting transmission of light between an outer environment and said OLED;

a sealing region disposed between said first and second barrier layers, said sealing region cooperating with said first and second barrier layers to enclose said OLED and restrict transmission of water and oxygen from an outer environment to said OLED, said sealing region comprising an associated material that is harmful to said OLED, and said sealing region being formed of a material that undergoes a fluid-to-solid phase transformation; and

a blocking region disposed between said first and second barrier layers and disposed between said sealing region and said OLED, said blocking region restricting transmission of said associated material from said sealing region to said OLED.

11. The OLED device structure of claim 10, wherein said sealing region is a solder region and said associated material comprises solder flux.

12. The OLED device structure of claim 10, wherein said sealing region is a two-part epoxy region and said associated material comprises gas released from said epoxy.

13. The OLED device structure of claim 10, wherein said sealing region is a low viscosity epoxy.

14. The OLED device structure of claim 10, wherein said blocking region is a curable liquid adhesive.

15. The OLED device structure of claim 14, wherein said curable liquid adhesive is a thermally curable epoxy material.

16. The OLED device structure of claim 14, wherein said curable liquid adhesive is an ultraviolet-curable epoxy material.

17. The OLED device structure of claim 10, wherein said blocking region is a solid adhesive composition.

18. The OLED device structure of claim 17, wherein said solid adhesive composition is a two-sided adhesive tape.

19. The OLED device structure of claim 10, wherein at least one of said first and second barrier layers is a glass layer.

20. The OLED device structure of claim 10, wherein at least one of said first and second barrier layers comprises a glass sub-layer.

21. The OLED device structure of claim 10, wherein at least one of said first and second barrier layers is a metal layer.

22. The OLED device structure of claim 10, wherein at least one of said first and second barrier layers comprises a metal sub-layer.

23. The OLED device structure of claim 10, wherein at least one of said first and second barrier layers comprises a polymer substrate sub-layer and a plurality of cooperative barrier sub-layers disposed on said polymer substrate sub-layer, said plurality of cooperative barrier sub-layers comprising a planarizing sub-layer and a high-density sub-layer.

24. The OLED device structure of claim 23, wherein said cooperative barrier sub-layers comprise an alternating series of two or more planarizing sub-layers and two or more high-density sub-layers.

25. The OLED device structure of claim 10, wherein at least one of said first and second barrier layers is a silicon layer.

26. The OLED device structure of claim 10, wherein at least one of said first and second barrier layers comprises a silicon sub-layer.

28. The OLED device structure of claim 10, wherein said sealing region and said blocking region are in the form of bands between said first and second barrier layer.