Light emitting semiconductor device with a surface-mounted and flip-chip package structure

• US 6,614,058 B2
• Filed: 07/09/2002
• Issued: 09/02/2003
• Est. Priority Date: 07/12/2001
• Status: Active Grant

• Current Assignee: Epistar Corporation
• Original Assignee: Highlink Technology Corp.
• Inventors: Lin, Ming-der, Wang, Kwang-ru
• Primary Examiner(s): JACKSON JR, JEROME
• Application Number:
  US10/192,171
• Publication Number:
  US 20030010986A1
• Time in Patent Office: 420 Days
• Field of Search: 257/99, 257/98, 257/100
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/04941 TiN
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A light emitting semiconductor device with a surface-mounted and flip-chip package structure is disclosed. The light emitting semiconductor device includes an insulating substrate and an LED. The LED includes a substrate, a first-type semiconductor layer, a first electrode formed on part of the first-type semiconductor layer surface, a second-type semiconductor layer formed on the first-type semiconductor layer surface but not covering the first electrode, and a second electrode formed on the second-type semiconductor layer. Two electrode layers are formed on the two sides of the insulating substrate and extend upwardly and downwardly to the upper and lower surface of the insulating substrate. The device is characterized in that the LED is mounted on the insulating substrate by a flip chip method and the insulating substrate is formed with two electrode layers at both side walls to surface-mounted with the LED.

Claims

1. A light emitting semiconductor device with a surface-mounted and flip-chip package structure, said device comprising:

an insulating substrate;

an LED, including;

a substrate;

a first-type semiconductor layer formed on said substrate;

a first electrode formed on part of the surface of said first semiconductor layer;

a second-type semiconductor layer formed on the surface of said first-type semiconductor layer, therein said second-type semiconductor layer does not cover said first electrode; and

a second electrode formed on the surface of said second-type semiconductor layer;

two bumps, formed on the surface of said insulating substrate, the first and second electrodes of said LED are mounted onto the surface of said insulating substrate via said two bumps respectively;

a non-conductive layer disposed between said two bumps; and

two electrode layers, positioned on the two sides of said insulating substrate and extended upwardly and downwardly to the upper and lower surface of said insulating substrate, and the upper part of said two electrode layers are electrically connected with the first and second electrodes of said LED via said two bumps.

2. The light emitting semiconductor device according to claim 1, wherein said insulating substrate is a ceramic substrate.

3. The light emitting semiconductor device according to claim 1, wherein said insulating substrate is a glass substrate.

4. The light emitting semiconductor device according to claim 1, wherein said insulating substrate is a silicon substrate formed with an insulation layer thereon.

5. The light emitting semiconductor device according to claim 1, wherein said insulating substrate is a silicon substrate formed with a metal layer and an insulation layer thereon, therein the insulation layer is formed on the metal layer.

6. The light emitting semiconductor device according to claim 1, wherein said insulating substrate is a silicon substrate formed with an insulation layer and a metal layer thereon, therein the metal layer is formed on the insulation layer.

7. The light emitting semiconductor device according to claims 5 or 6, wherein said metal layer is made of a material selected from the group consisting of Al, Au, Ag, Ti, Ni, and Pt.

8. The light emitting semiconductor device according to any of claims 4, 5, or 6, wherein said insulation layer is made of a material selected from the group consisting of SiO_x, SiN_x, TiN, Al₂O₃, TiO₂, Ta₂O₅, TEOS (tetra-ethyl-Ortho-Silicate), epoxy, and polyimide.

9. The light emitting semiconductor device according to claim 1, wherein the substrate of said LED is made of a material selected from the group consisting of sapphire, GaN, Si, GaAs, BN, InP, GaP, ITO, ZnO, SiC, and diamond.

10. The light emitting semiconductor device according to claim 1, wherein the non-conductive layer is made from SiO_x, SiN_x, TiN, Al₂O₃, TiO₂, Ta₂O₅, tetra-ethyl-ortho-silicate (TEOS), epoxy or polyimide.

11. The light emitting semiconductor device according to claim 1, wherein a sidewall of said LED is an incline.

12. The light emitting semiconductor device according to claim 1, wherein said device further includes a conductive-reflective layer disposed on the surface of said second electrode.

13. The light emitting semiconductor device according to claim 12, wherein said conductive reflection layer is made of a material selected from the group consisting of Au, Al, Ni, Ti, Ag, Cr, and Pt.

14. The light emitting semiconductor device according to claim 12, wherein said the conductive reflection layer is made of a material selected from the group consisting of TiN, ITO, and ZnO.

15. The light emitting semiconductor device according to claim 12, wherein said conductive reflection layer is of a multi-layer structure whose layers are alternately made of a material selected from the group consisting of Au, Al, Ni, Ti, Ag, Cr, and Pt and a material selected from the group consisting of TiN, ITO, and ZnO.

16. The light emitting semiconductor device according to claim 1, wherein the material of said first and second semiconductor layer is formed of four elements semiconductor material:

In_xAl_yGa_1-x-yN, and x and y satisfy 0□

x□

1, 0□

y□

1, and x+y=1.

17. The light emitting semiconductor device according to claim 1, wherein said second electrode is transparent.

18. The light emitting semiconductor device according to claim 1, wherein said second electrode is non-transparent.

19. The light emitting semiconductor device according to claim 1, wherein said first-type semiconductor layer is an N-type semiconductor layer and said second-type semiconductor layer is a P-type semiconductor layer.

20. The light emitting semiconductor device according to claim 1, wherein said first-type semiconductor layer is a P-type semiconductor layer and said second-type semiconductor layer is an N-type semiconductor layer.

21. The light emitting semiconductor device according to claim 1, wherein the non-conductive layer is of a projection type.

22. The light emitting semiconductor device according to claim 1, wherein the non-conductive layer is for preventing misalignment between the insulating substrate and the LED.

23. The light emitting semiconductor device according to claim 1, wherein the non-conductive layer is a projection layer for preventing misalignment between the insulating substrate and the LED.