Light emitting diodes with asymmetric resonance tunnelling

• US 6,614,060 B1
• Filed: 05/26/2000
• Issued: 09/02/2003
• Est. Priority Date: 05/28/1999
• Status: Expired due to Term

• Current Assignee: Arima Optoelectronics Corp.
• Original Assignee: Arima Optoelectronics Corp.
• Inventors: Shreter, Yurii Georgievich, Rebane, Yurii Toomasovich, Wang, Wang Nang
• Primary Examiner(s): Flynn, Nathan J.
• Assistant Examiner(s): MONDT, JOHANNES P
• Application Number:
  US09/579,773
• Time in Patent Office: 1,194 Days
• Field of Search: 257/14, 257/18, 257/22, 257/25, 257/94, 257/96, 257/97, 257/101, 257/102, 257/103
• US Class Current: 257/103
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

An LED based on a two well system with charge asymmetric resonance tunnelling comprises first and second coupled wells, one being a wide well and the other an active quantum well. The wells are coupled via a resonance tunnelling barrier which is transparent for electrons and blocking for holes.

Claims

1. A light emitting diode (LED) based on a two well system with charge asymmetric resonance tunnelling, comprising first and second coupled wells, one being an active quantum well and the other well being a well which is wide compared with the active quantum well, the wells being coupled via a resonance tunnelling barrier which is transparent for electrons and blocking for holes, wherein the wide well comprises InGaN, the resonance tunnelling barrier comprises GaN and the quantum well comprises InGaN.

2. An LED according to claim 1, wherein the active well is a multiple quantum well structure.

3. An LED according to claim 1, including a buffer layer comprising a strained superlattice.

4. An LED according to claim 1, wherein a p-contact layer is one of GaN, p-Al_xGa₁₋

xN and p-type polycrystalline GaN.

5. An LED according to claim 1, wherein a p-contact layer has been doped by isoelectronic codoping using one or both of Mg and Al.

6. An LED according to claim 1, wherein ohmic contacts are either both on the top or on the top and bottom of the LED structure.

7. A light emitting diode (LED) based on a two well system with charge asymmetric resonance tunnelling, comprising first and second coupled wells, one being an active quantum well and the other well being a well which is wide compared with the active quantum well, the wells being coupled via a resonance tunnelling barrier which is transparent for electrons and blocking for holes, wherein the LED is an AlGaInP based LED comprising:

an n-type GaAs substrate with the thickness of 100-300 μ

m;

a metallic ohmic contact attached to the substrate;

an n-type GaAs buffer layer with a doping level of 5×

10¹⁷-10¹⁹ cm<sup>−

3</sup> and a thickness of 0.1 to 0.3 μ

m;

an n-cladding layer made of 0.3 to 2 μ

m thick n-type (Al_xGa<sub>1−

x</sub>)_0.5In_0.5P with 0.5≦

x≦

1 and a doping level of 5×

10¹⁷-10²⁰ cm<sup>−

3</sup>;

an electron emitting layer comprising a simple undoped electron emitting layer made of 0.01 to 0.2 μ

m thick (Al_xGa<sub>1−

x</sub>)_0.5In0.5P with 0.2≦

x 0.5 or a multiple quantum well structure made of ≦

1 μ

m thick (Al_xGa<sub>1−

x</sub>)<sub>1−

y</sub>In_yP/(Al_x1Ga<sub>1−

x</sub>)<sub>1−

y1</sub>In_y1P with 0.5≦

x≦

1, 0.4≦

y≦

0.6 and 0≦

x1≦

0.4, 0≦

y1≦

0.4;

a charge asymmetric resonance tunnelling barrier comprising an ˜

10-100 Å

thick undoped (Al_xGa<sub>1−

x</sub>)_0.5In_0.5P layer with 0.7≦

x≦

1;

an active well layer comprising either a single quantum well structure made of <

200 Å

thick undoped (Al_xGa<sub>1−

x</sub>)_0.5In_0.5P with 0≦

x≦

0.4 or a multiple quantum well structure made of ≦

3 μ

m thick (Al_xGa<sub>1−

x</sub>)<sub>1−

x</sub>In_yP/(Al_x1Ga<sub>1−

x1</sub>)<sub>1−

y1</sub>In_y1P with 0.5≦

x≦

1, 0.4≦

y≦

0.6 and 0≦

x≦

0.4, 0≦

y1 23 0.4;

a 0.3 to 2 μ

m thick hole emitting layer made of p-type (Al_xGa<sub>1−

x</sub>)_0.5In_0.5P with 0.5≦

x≦

1 and a doping level of 5×

10¹⁶ to 5×

10¹⁸ cm<sup>−

3</sup>; and

a ≦

12 μ

m window layer made of p-type In_xGa<sub>1−

x</sub>P with x ≦

0.1 and a doping level 5×

10¹⁷ to 5×

10¹⁸ cm<sup>−

3</sup>; and

a metallic ohmic contact deposited on the hole emitting layer.

8. A light emitting diode (LED) based on a two well system with charge asymmetric resonance tunnelling, comprising first and second coupled wells, one being an active quantum well and the other well being a well which is wide compared with the active quantum well, the wells being coupled via a resonance tunnelling barrier which is transparent for electrons and blocking for holes, wherein the wide well comprises a III-nitride-based semiconductor, the resonance tunnelling barrier comprises a III-nitride-based semiconductor and the quantum well comprises a III-nitride-based semiconductor.