Multi-stage, high frequency, high power signal amplifier
First Claim
1. A broadband radio frequency (RF) signal amplifier, comprising:
- a plurality of transistors attached to a surface of a pedestal, each transistor having an input and an output, the pedestal comprising a support structure, reference ground and heat sink for the transistors;
a RF input path electrically connected to the transistor inputs, the input path including a splitter configured to split a RF input signal into a plurality of component input signals, a plurality of input matching networks, each input matching network configured to couple a respective component input signal to a respective transistor input at an input impedance, and a plurality of input direct current (dc) bias networks, each input dc bias network configured to bias a respective transistor input to an input operating point, the splitter, input matching networks and input bias networks at least partially implemented in a multi-layer printed circuit board; and
a RF output path electrically connected to the transistor outputs, the output path including a combiner configured to combine component output signals received at the transistor outputs into a RF output signal, a plurality of output matching networks, each output matching network configured to couple a respective component output signal to a respective transistor output at an output impedance, and a plurality of output dc bias networks, each output dc bias network configured to bias a respective transistor output to an output operating point, the combiner, output matching networks and output bias networks at least partially implemented in the printed circuit board;
wherein the pedestal is configured such that when it is positioned with respect to the printed circuit board, an input or output grounding shelf of the printed circuit board is in close proximity with a mounting surface of the pedestal.
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Accused Products
Abstract
A broadband RF signal amplifier includes a plurality of transistors attached to a surface of a pedestal, each transistor having an input and an output. An RF input path electrically connected to the transistor inputs includes a passive splitter implemented in a multi-layer printed circuit board and configured to split a RF input signal into a plurality of component input signals. A plurality of corresponding input matching networks including one-quarter wavelength transmission lines implemented in the printed circuit board couple respective component input signals to the transistor inputs at an input impedance, the input matching networks further comprising respective input matching capacitors attached to the pedestal. An RF output path electrically connected to the transistor outputs includes a passive combiner implemented in the printed circuit board and configured to combine component output signals received at the transistor outputs into a RF output signal. A plurality of corresponding output matching networks including one-quarter wavelength transmission lines implemented in the printed circuit board couple the respective component output signals at the transistor outputs to an output impedance.
32 Citations
27 Claims
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1. A broadband radio frequency (RF) signal amplifier, comprising:
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a plurality of transistors attached to a surface of a pedestal, each transistor having an input and an output, the pedestal comprising a support structure, reference ground and heat sink for the transistors;
a RF input path electrically connected to the transistor inputs, the input path including a splitter configured to split a RF input signal into a plurality of component input signals, a plurality of input matching networks, each input matching network configured to couple a respective component input signal to a respective transistor input at an input impedance, and a plurality of input direct current (dc) bias networks, each input dc bias network configured to bias a respective transistor input to an input operating point, the splitter, input matching networks and input bias networks at least partially implemented in a multi-layer printed circuit board; and
a RF output path electrically connected to the transistor outputs, the output path including a combiner configured to combine component output signals received at the transistor outputs into a RF output signal, a plurality of output matching networks, each output matching network configured to couple a respective component output signal to a respective transistor output at an output impedance, and a plurality of output dc bias networks, each output dc bias network configured to bias a respective transistor output to an output operating point, the combiner, output matching networks and output bias networks at least partially implemented in the printed circuit board;
wherein the pedestal is configured such that when it is positioned with respect to the printed circuit board, an input or output grounding shelf of the printed circuit board is in close proximity with a mounting surface of the pedestal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
a first plurality of conductors electrically connecting respective input path transmission lines implemented in the printed circuit board to respective transistor inputs, and a second plurality of conductors electrically connecting respective output path transmission lines implemented in the printed circuit board to respective transistor outputs. -
14. The amplifier of claim 12, wherein the first and second pluralities of conductors comprise respective sets of bond wires extending between the printed circuit board and the pedestal.
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15. The amplifier of claim 1, wherein the pedestal and printed circuit board are attached to a common reference ground and heat sink.
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16. The amplifier of claim 15, the input and output paths comprising respective input and output reference ground shelves implemented in the printed circuit board, the input and output ground shelves electrically connected to the pedestal by respective pluralities of bond wires providing low inductance paths.
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17. A broadband radio frequency (RF) signal amplifier, comprising:
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a plurality of transistors attached to a surface of a pedestal, each transistor having an input and an output, the pedestal comprising a support structure, reference ground and heat sink for the transistors;
a RF input path electrically connected to the transistor inputs, the input path including a splitter configured to split a RF input signal into a plurality of component input signals, a plurality of input matching networks, each input matching network configured to couple a respective component input signal to a respective transistor input at an input impedance, and a plurality of input direct current (dc) bias networks, each input dc bias network configured to bias a respective transistor input to an input operating point, the splitter, input matching networks and input bias networks at least partially implemented in a multi-layer printed circuit board, the input matching networks comprising respective input matching capacitors attached to the pedestal; and
a RF output path electrically connected to the transistor outputs, the output path including a combiner configured to combine component output signals at the transistor outputs into a RF output signal, a plurality of output matching networks, each output matching network configured to couple a respective component output signal to a respective transistor output at an output impedance, and a plurality of output dc bias networks, each output dc bias network configured to bias a respective transistor output to an output operating point, the combiner, output matching networks and output bias networks at least partially implemented in the printed circuit board, the output matching networks comprising respective output matching capacitors attached to the pedestal;
wherein the pedestal is configured such that when it is positioned with respect to the printed circuit board, an input or output grounding shelf of the printed circuit board is in close proximity with a mounting surface of the pedestal. - View Dependent Claims (18, 19, 20, 21)
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22. A broadband radio frequency (RF) signal amplifier, comprising:
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a plurality of transistors attached to a surface of a pedestal, each transistor having an input and an output;
a RF input path electrically connected to the transistor inputs, the input path including a splitter configured to split a RF input signal into a plurality of component input signals, and a plurality of input matching networks, each input matching network configured to couple a respective component input signal to a respective transistor input at an input impedance, the splitter and input matching networks at least partially implemented in a multi-layer printed circuit board, the input matching networks comprising respective input matching capacitors attached to the pedestal; and
a RF output path electrically connected to the transistor outputs, the output path including a combiner configured to combine component output signals at the transistor outputs into a RF output signal, and a plurality of output matching networks, each output matching network configured to couple a respective component output signal to a respective transistor output at an output impedance, the combiner and output matching networks at least partially implemented in the printed circuit board, the output matching networks comprising respective output matching capacitors attached to the pedestal;
wherein the pedestal is configured such that when it is positioned with respect to the printed circuit board, an input or output grounding shelf of the printed circuit board is in close proximity with a mounting surface of the pedestal. - View Dependent Claims (23, 24, 25, 26, 27)
the input path further comprises a plurality of input bias networks electrically connecting an input direct current (dc) bias source to the input matching capacitors, and the output path further comprises a plurality of input bias networks electrically connecting an output dc bias source to the output matching capacitors. -
26. The amplifier of claim 25, wherein
the input dc bias source is connected to the input matching capacitors through respective transmission lines implemented in the printed circuit board, each having a length approximating one-fourth of a wavelength of a fundamental frequency of the RF input signal, and the output dc bias source is connected to the output matching capacitors through respective transmission lines implemented in the printed circuit board, each having a length approximating one-fourth of a wavelength of a fundamental frequency of the RF input signal. -
27. The amplifier of claim 25, wherein the input dc bias source is connected to the input matching capacitors, and the output dc bias source is connected to the output matching capacitors, without the either of input or output dc bias source being transmitted through a one-fourth wavelength transmission line.
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Specification