Method and apparatus for determining feature characteristics using scatterometry

• US 6,614,540 B1
• Filed: 06/28/2001
• Issued: 09/02/2003
• Est. Priority Date: 06/28/2001
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Stirton, James Broc
• Primary Examiner(s): Sugarman, Scott J.
• Application Number:
  US09/894,048
• Time in Patent Office: 796 Days
• Field of Search: 356/630, 356/237.1
• US Class Current: 356/630
• CPC Class Codes: G01B 11/303 using photoelectric detection means
• CPC Class Codes: G01N 21/95607 using a comparative method
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching

Abstract

A method for characterizing features includes measuring a dimensional characteristic of a first grating structure; illuminating at least a portion of a first feature and the first grating structure, the first feature being formed over at least a portion of the first grating structure; measuring light reflected from the illuminated portion of the first feature and the first grating structure to generate a reflection profile; selecting at least one reference reflection profile based on the measured dimensional characteristic of the first grating structure, comparing the generated reflection profile to the selected reference reflection profile; and determining a characteristic of the first feature based on the comparison between the measured reflection profile and the selected reference reflection profile.

Claims

1. A method for characterizing features, comprising:

measuring a dimensional characteristic of a first grating structure;

illuminating at least a portion of a first feature and the first grating structure, the first feature being formed over at least a portion of the first grating structure;

measuring light reflected from the illuminated portion of the first feature and the first grating structure to generate a reflection profile;

selecting at least one reference reflection profile based on the measured dimensional characteristic of the first grating structure;

comparing the generated reflection profile to the selected reference reflection profile; and

determining a characteristic of the first feature based on the comparison between the measured reflection profile and the selected reference reflection profile.

2. The method of claim 1, wherein forming the first feature further comprises forming a second grating structure over at least a portion of the first grating structure.

3. The method of claim 2, wherein determining the characteristic of the first feature comprises determining an overlay error between the first grating structure and the second grating structure.

4. The method of claim 3, wherein forming the second grating structure further comprises forming a photoresist layer.

5. The method of claim 4, wherein forming the photoresist layer further comprises exposing the photoresist layer to define the second grating structure.

6. The method of claim 4, wherein forming the photoresist layer further comprises developing the photoresist layer to define the second grating structure.

7. The method of claim 1, wherein forming the first feature further comprises forming a process layer over at least a portion of the first grating structure.

8. The method of claim 7, wherein determining the characteristic of the first feature comprises determining a thickness of the process layer.

9. The method of claim 7, wherein determining the characteristic of the first feature comprises determining conformality of the process layer.

10. The method of claim 1, wherein:

selecting the at least one reference reflection profile further comprises generating a library of reference reflection profiles based on the measured dimension of the first grating structure, each reference reflection profile having an associated characteristic metric;

comparing the generated reflection profile to the selected reference reflection profile further comprises selecting a reference reflection profile from the library closest to the generated reflection profile; and

determining the characteristic of the first feature further comprises determining the characteristic of the first feature based on the characteristic metric associated with the selected reference reflection profile from the library.

11. The method of claim 1, wherein:

selecting the at least one reference reflection profile further comprises selecting a set of reference reflection profiles from a library of reference reflection profiles based on the measured dimension of the first grating structure, each reference reflection profile in the selected set having an associated characteristic metric;

comparing the generated reflection profile to the selected reference reflection profile further comprises selecting a reference reflection profile from the set closest to the generated reflection profile; and

determining the characteristic of the first feature further comprises determining the characteristic of the first feature based on the characteristic metric associated with the selected reference reflection profile from the set.

12. The method of claim 1, wherein:

selecting the at least one reference reflection profile further comprises generating a target reflection profile based on the measured dimension of the first grating structure;

comparing the generated reflection profile to the selected reference reflection profile further comprises comparing the generated reflection profile to the target reflection profile; and

determining the characteristic of the first feature further comprises determining the second characteristic of the first feature based on the comparison of the generated reflection profile and the target reflection profile.

13. The method of claim 1, wherein:

selecting the at least one reference reflection profile further comprises selecting a target reflection profile from a library of reference reflection profiles based on the measured dimension of the first grating structure;

comparing the generated reflection profile to the selected reference reflection profile further comprises comparing the generated reflection profile to the target reflection profile; and

determining the characteristic of the first feature further comprising determining the characteristic of the first feature based on the comparison of the generated reflection profile and the target reflection profile.

14. The method of claim 1, wherein generating the reflection profile comprises generating the reflection profile based on at least one of intensity and phase of the reflected light.

15. The method of claim 1, further comprising identifying a fault condition associated with the first feature based on the determined characteristic of the first feature.

16. The method of claim 1, wherein forming the first grating and the first feature further comprises forming the first grating and the first feature in a test structure on a wafer.

17. The method of claim 1, wherein forming the first grating and the first feature further comprises forming the first grating and the first feature in a production device on a wafer.

18. The method of claim 1, wherein measuring the dimension of the first grating structure further comprises measuring the dimension using at least one of a scatterometry tool, a scanning electron microscope, an atomic force microscope, and a thickness measuring tool.

65. The processing line of claim 5, further comprising a controller adapted to identify a fault condition associated with the first feature based on the determined characteristic of the first feature.

19. A method for characterizing features, comprising:

measuring a dimensional characteristic of a first grating structure;

illuminating at least a portion of a first feature and the first grating structure, the first feature being formed over at least a portion of the first grating structure;

measuring light reflected from the illuminated portion of the first feature and the first grating structure to generate a reflection profile;

generating at least one reference reflection profile based on the measured dimensional characteristic of the first grating structure;

comparing the generated reflection profile to the generated reference reflection profile; and

determining a characteristic of the first feature based on the comparison between the measured reflection profile and the generated reference reflection profile.

20. The method of claim 19, wherein forming the first feature further comprises forming a second grating structure over at least a portion of the first grating structure.

21. The method of claim 20, wherein determining the characteristic of the first feature comprises determining an overlay error between the first grating structure and the second grating structure.

22. The method of claim 21, wherein forming the second grating structure further comprises forming a photoresist layer.

23. The method of claim 22, wherein forming the photoresist layer further comprises exposing the photoresist layer to define the second grating structure.

24. The method of claim 22, wherein forming the photoresist layer further comprises developing the photoresist layer to define the second grating structure.

25. The method of claim 19, wherein forming the first feature further comprises forming a process layer over at least a portion of the first grating structure.

26. The method of claim 25, wherein determining the characteristic of the first feature comprises determining a thickness of the process layer.

27. The method of claim 25, wherein determining the characteristic of the first feature comprises determining conformality of the process layer.

28. The method of claim 19, wherein:

generating the at least one reference reflection profile further comprises generating a library of reference reflection profiles based on the measured dimension of the first grating structure, each reference reflection profile having an associated characteristic metric;

comparing the generated reflection profile to the generated reference reflection profile further comprises selecting a reference reflection profile from the library closest to the generated reflection profile; and

determining the characteristic of the first feature further comprises determining the characteristic of the first feature based on the characteristic metric associated with the selected reference reflection profile from the library.

29. The method of claim 19, wherein:

generating the at least one reference reflection profile further comprises generating a target reflection profile based on the measured dimension of the first grating structure;

comparing the generated reflection profile to the generated reference reflection profile further comprises comparing the generated reflection profile to the target reflection profile; and

determining the characteristic of the first feature further comprises determining the second characteristic of the first feature based on the comparison of the generated reflection profile and the target reflection profile.

30. The method of claim 19, wherein generating the reflection profile comprises generating the reflection profile based on at least one of intensity and phase of the reflected light.

31. The method of claim 19, further comprising identifying a fault condition associated with the first feature based on the determined characteristic of the first feature.

32. The method of claim 19, wherein forming the first grating and the first feature further comprises forming the first grating and the first feature in a test structure on a wafer.

33. The method of claim 19, wherein forming the first grating and the first feature further comprises forming the first grating and the first feature in a production device on a wafer.

34. The method of claim 19, wherein measuring the dimension of the first grating structure further comprises measuring the dimension using at least one of a scatterometry tool, a scanning electron microscope, an atomic force microscope, and a thickness measuring tool.

35. A processing line, comprising:

a first metrology tool adapted to measure a dimensional characteristic of a first grating structure;

a second metrology tool, comprising;

a light source adapted to illuminating at least a portion of a first feature and the first grating structure, the first feature being formed over at least a portionof the first grating structure;

a detector adapted to measure light reflected from the illuminated portion of the first feature and the first grating structure to generate a reflection profile; and

a data processing unit adapted to select at least one reference reflection profile based on the measured dimensional characteristic of the first grating structure, comparing the generated reflection profile to the selected reference reflection profile, and determine a characteristic of the first feature based on the comparison between the measured reflection profile and the selected reference reflection profile.

36. The processing line of claim 35, wherein the first feature further comprises a second grating structure formed over at least a portion of the first grating structure.

37. The processing line of claim 36, wherein the characteristic of the first feature comprises an overlay error between the first grating structure and the second grating structure.

38. The processing line of claim 37, wherein the second grating structure further comprises a photoresist layer.

39. The processing line of claim 38, wherein the photoresist layer further comprises an exposed photoresist layer.

40. The processing line of claim 38, wherein the photoresist layer further comprises a developed photoresist layer.

41. The processing line of claim 35, wherein the first feature further comprises a process layer formed over at least a portion of the first grating structure.

42. The processing line of claim 41, wherein the characteristic of the first feature comprises a thickness of the process layer.

43. The processing line of claim 41, wherein the characteristic of the first feature comprises conformality of the process layer.

44. The processing line of claim 35, wherein the data processing unit is further adapted to generate a library of reference reflection profiles based on the measured dimension of the first grating structure, each reference reflection profile having an associated characteristic metric, select a reference reflection profile from the library closest to the generated reflection profile, and determine the characteristic of the first feature based on the characteristic metric associated with the selected reference reflection profile from the library.

45. The processing line of claim 35, wherein the data processing unit is further adapted to select a set of reference reflection profiles from a library of reference reflection profiles based on the measured dimension of the first grating structure, each reference reflection profile in the selected set having an associated characteristic metric, select a reference reflection profile from the set closest to the generated reflection profile, and determine the characteristic of the first feature based on the characteristic metric associated with the selected reference reflection profile from the set.

46. The processing the of claim 35, wherein the data processing unit is further adapted to generate a target reflection profile based on the measured dimension of the first grating structure, compare the generated reflection profile to the target reflection profile, and determine the second characteristic of the first feature based on the comparison of the generated reflection profile and the target reflection profile.

47. The processing line of claim 35, wherein the data processing unit is further adapted to select a target reflection profile from a library of reference reflection profiles based on the measured dimension of the first grating structure, compare the generated reflection profile to the target reflection profile, and determine the characteristic of the first feature based on the comparison of the generated reflection profile and the target reflection profile.

48. The processing line of claim 35, wherein the detector is further adapted to generate the reflection profile based on at least one of intensity and phase of the reflected light.

49. The processing line of claim 35, further comprising a controller adapted to identify a fault condition associated with the first feature based on the determined characteristic of the first feature.

50. The processing line of claim 35, wherein the first grating structure and the first feature are formed in a test structure on a wafer.

51. The processing line of claim 35, wherein the first grating structure and the first feature are formed in a production device on a wafer.

52. The processing line of claim 35, wherein the first metrology tool comprises at least one of a scatterometry tool, a scanning electron microscope, an atomic force microscope, and a thickness measuring tool.

53. A processing line, comprising:

a first metrology tool adapted to measure a dimensional characteristic of a first grating structure;

a second metrology tool, comprising;

a light source adapted to illuminating at least a portion of a first feature and the first grating structure, the first feature being formed over at least a portion of the first grating structure;

a detector adapted to measure light reflected from the illuminated portion of the first feature and the first grating structure to generate a reflection profile; and

;

a data processing unit adapted to generate at least one reference reflection profile based on the measured dimensional characteristic of the first grating structure, compare the generated reflection profile to the generated reference reflection profile, and determine a characteristic of the first feature based on the comparison between the measured reflection profile and the generated reference reflection profile.

54. The processing line of claim 53, wherein the first feature further comprises a second grating structure formed over at least a portion of the first grating structure.

55. The processing line of claim 54, wherein the characteristic of the first feature comprises an overlay error between the first grating structure and the second grating structure.

56. The processing line of claim 55, wherein the second grating structure further comprises a photoresist layer.

57. The processing line of claim 56, wherein the photoresist layer further comprises an exposed photoresist layer.

58. The processing line of claim 56, wherein the photoresist layer further comprises a developed photoresist layer.

59. The processing line of claim 53, wherein the first feature further comprises a process layer formed over at least a portion of the first grating structure.

60. The processing line of claim 59, wherein die characteristic of the first as feature comprises a thickness of the process layer.

61. The processing line of claim 59, wherein the characteristic of the first feature comprises conformality of the process layer.

62. The processing line of claim 53, wherein the data processing unit is further adapted to generate a library of reference reflection profiles based on the measured dimension of the first grating structure, each reference reflection profile having an associated characteristic metric, select a reference reflection profile from the library closest to the generated reflection profile, and determine the characteristic of the first feature based on the characteristic metric associated with the selected reference reflection profile from the library.

63. The processing line of claim 53, wherein the data processing unit is further adapted to generate a target reflection profile based on the measured dimension of the first grating structure, compare the generated reflection profile to the target reflection profile, and determine the second characteristic of the first feature based on the comparison of the generated reflection profile and the target reflection profile.

64. The processing line of claim 53, wherein the detector is further adapted to generate the reflection profile based on at least one of intensity and phase of the reflected light.

66. The processing line of claim 53, wherein the first grating structure and the first feature are formed in a test structure on a wafer.

67. The processing line of claim 53, wherein the first grating structure and the first feature are formed in a production device on a wafer.

68. The processing line of claim 53, wherein the first metrology tool comprises at least one of a scatterometry tool, a scanning electron microscope, an atomic force microscope, and a thickness measuring tool.

69. A processing line, comprising:

means for measuring a dimensional characteristic of a first grating structure;

means for illuminating at least a portion of a first feature and the first grating structure, the first feature being formed over at least a portion of the first grating structure;

means for measuring light reflected from the illuminated portion of the first feature and the first grating structure to generate a reflection profile;

means for selecting at least one reference reflection profile based on the measured dimensional characteristic of the first grating structure;

means for comparing the generated reflection profile to the selected reference reflection profile; and

means for determining a characteristic of the first feature based on the comparison between the measured reflection profile and the selected reference reflection profile.

70. A processing line, comprising:

means for measuring a dimensional characteristic of a first grating structure;

means for illuminating at least a position of a first feature and the first grating structure, the first feature being formed over at least a portion of the first grating structure;

means for measuring light reflected from the illuminated portion of the first feature and the first grating structure to generate a reflection profile;

means for generating at least one reference reflection profile based on the measured dimensional characteristic of the first grating structure;

means for comparing the generated reflection profile to the generated reference reflection profile; and

means for determining a characteristic of the first feature based on the comparison between the measured reflection profile and the generated reference reflection profile.