Laser diode and semiconductor light-emitting device producing visible-wavelength radiation

• US 6,614,821 B1
• Filed: 08/04/2000
• Issued: 09/02/2003
• Est. Priority Date: 08/04/1999
• Status: Expired due to Fees

• Current Assignee: Ricoh Company Limited, Sps-Afos Group Limited
• Original Assignee: Ricoh Company Limited
• Inventors: Takahashi, Takashi, Sato, Shunichi, Jikutani, Naoto
• Primary Examiner(s): Ip, Paul
• Assistant Examiner(s): NGUYEN, TUAN N
• Application Number:
  US09/633,230
• Time in Patent Office: 1,124 Days
• Field of Search: 457/435, 457/613, 372/96, 372/43-50
• US Class Current: 372/43.01
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/2202 by making a groove in the upper laser structure
• CPC Class Codes: H01S 5/2206 based on III-V materials
• CPC Class Codes: H01S 5/2209 GaInP based
• CPC Class Codes: H01S 5/221 containing aluminium
• CPC Class Codes: H01S 5/2231 with inner confining structure only between the active layer and the upper electrode
• CPC Class Codes: H01S 5/3201 incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation
• CPC Class Codes: H01S 5/3434 with a well layer comprising at least both As and P as V-compounds

Abstract

A laser diode includes a substrate having a lattice constant of GaAs or between GaAs and GaP, a first cladding layer of AlGaInP formed on the substrate, an active layer of GaInAsP formed on the first cladding layer, an etching stopper layer of GaInP formed on the active layer, a pair of current-blocking regions of AlGaInP formed on the etching stopper layer so as to define a strip region therebetween, an optical waveguide layer of AlGaInP formed on the pair of current-blocking regions so as to cover the etching stopper layer in the stripe region, and a second cladding layer of AlGaInP formed on the optical waveguide layer, wherein the current-blocking regions having an Al content substantially identical with an Al content of the second cladding layer.

Claims

1. A laser diode, comprising:

a substrate having a first conductivity type;

a first cladding layer of said first conductivity type provided over said substrate, said first cladding layer having a lattice constant larger than that of GaAs and smaller than that of GaP;

an active layer formed over said first cladding layer;

a second cladding layer of a second conductivity type provided over said active layer, said second cladding layer having said lattice constant;

a ridge-stripe region formed in said second cladding layer; and

a pair of current-blocking regions of said first conductivity type respectively provided over said second cladding layer at both lateral sides of said ridge-stripe region;

each of said current-blocking regions having a composition represented as (Al_x1Ga<sub>1−

x1</sub>)_y1In<sub>1−

y1</sub>As_z1P<sub>1−

z1</sub> (0≦

x₁≦

1, 0≦

y₁≦

1, 0<

z₁≦

1).

2. A laser diode as claimed in claim 1, wherein said current-blocking regions have a composition represented as (Al_x1Ga₁₋

x1)_y1In<sub>1−

y1</sub>As_z1P<sub>1−

z1</sub> (0≦

x₁≦

1, 0≦

y₁1, 0.01≦

z₁≦

1).

3. A laser diode as claimed in claim 1, wherein said current-blocking regions are transparent with respect to a laser beam produced by said laser diode.

4. A laser diode as claimed in claim 1, wherein said second cladding layer includes therein a layer having a composition represented as Ga_a1In₁₋

a1As_b1P<sub>1−

b1</sub> (0≦

a₁≦

1, 0≦

b₁≦

1).

5. A laser diode as claimed in claim 1, further comprising an optical waveguide layer of GaInP provided adjacent to said active layer in correspondence to at least one of an interface between said active layer and said first cladding layer and an interface between said active layer and said second cladding layer.