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GePSG core for a planar lightwave circuit

  • US 6,615,615 B2
  • Filed: 06/29/2001
  • Issued: 09/09/2003
  • Est. Priority Date: 06/29/2001
  • Status: Expired due to Term
First Claim
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1. A method of depositing a core layer for an optical waveguide structure of a planar lightwave circuit, the method comprising the steps of:

  • a) providing a flow rate for a Ge dopant for a SiO2 core layer deposition;

    b) providing a flow rate for a P dopant for the core layer deposition; and

    c) controlling the flow rate for the Ge dopant and the flow rate for the P dopant to form the core layer, thereby increasing refractive index stability of the core layer across an anneal temperature range, and wherein the controlling of the flow rate for the Ge dopant and the flow rate for the P dopant is configured to reduce a formation of bubbles within the core layer.

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