Transparent conductive laminate, its manufacturing method, and display comprising transparent conductive laminate
First Claim
1. A transparent conductive laminate comprising a crystalline transparent conductive film substantially consisting of In—
- Sn—
O and a transparent substrate composed of a thermoplastic polymer film, which is characterized in that the crystalline part of the conductive film has the highest X-ray diffraction intensity from the (222) crystal plane or the (440) crystal plane, the ratio of the X-ray diffraction intensity from the (440) crystal plane to that from the (222) crystal plane is within the range of 0.2 to 2.5 and the ratio of the X-ray diffraction intensity from the (400) crystal plane to that from the (440) crystal plane of the crystalline part is 0.478 or less.
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Accused Products
Abstract
A transparent conductive laminate in which a crystalline transparent conductive film substantially made of In—Sn—O on a transparent substrate composed of a thermoplastic polymer film, is provided. The crystalline part of the transparent conductive film (ITO-film) has a specific crystalline structure in which the X-ray diffraction intensity from the (222) crystal plane or the (440) crystal plane is highest, and [X440/222], the ratio of the X-ray diffraction intensity from the (440) crystal plane to that from the (222) crystal plane, is within the range of 0.2 to 2.5. The laminate has a low resistivity, and it is useful as an electrode material for a liquid crystal display, an electroluminescence device, a touch panel or the like. The transparent conductive laminate can be manufactured by combining the control of film fabricating atmosphere during sputtering and a heat treatment under specific conditions after film fabricating.
96 Citations
29 Claims
-
1. A transparent conductive laminate comprising a crystalline transparent conductive film substantially consisting of In—
- Sn—
O and a transparent substrate composed of a thermoplastic polymer film, which is characterized in that the crystalline part of the conductive film has the highest X-ray diffraction intensity from the (222) crystal plane or the (440) crystal plane, the ratio of the X-ray diffraction intensity from the (440) crystal plane to that from the (222) crystal plane is within the range of 0.2 to 2.5 and the ratio of the X-ray diffraction intensity from the (400) crystal plane to that from the (440) crystal plane of the crystalline part is 0.478 or less. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 22, 23, 24, 25, 26, 27, 28, 29)
- Sn—
-
12. A process for manufacturing a transparent conductive laminate by fabricating a transparent conductive film onto a transparent substrate consisting of a thermoplastic film by a sputtering method using a target mainly composed of In—
- Sn—
O, which is characterized in that the process comprises(a) the transparent conductive film is fabricated onto the substrate while the ratio of an oxygen partial pressure to a water partial pressure in a film fabricating atmosphere during sputtering is kept substantially zero or in the range of 10 to 1000, the ratio of the water partial pressure to an inert gas partial pressure is kept in the range of 2.5×
10−
6 to 7×
10−
4, and further during film fabricating, the temperature of the substrate is kept lower than 80°
C., and(b) subsequently, the laminate having the transparent conductive film fabricated onto the substrate is heat-treated at 80 to 150°
C. for 0.5 to 12 hr in an oxygen-containing atmosphere.- View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21)
(a-1) a transparent conductive film 10 to 300 nm in thickness is fabricated onto a transparent thermoplastic polymer film substrate 0.01 to 0.4 mm in thickness by DC magnetron sputtering, (a-2) the film fabricating is started while keeping the pressure at 2.5×
10−
4 Pa or less at first and a water partial pressure in the film fabricating atmosphere at 2.5×
10−
4 Pa or less at the film fabricating section during the said sputtering,(a-3) subsequently, an inert gas and oxygen are introduced into the film fabricating section and thereby the ratio of an oxygen partial pressure to the water partial pressure in the film fabricating atmosphere is brought into the range of 10 to 1000 and the ratio of the water partial pressure to an inert gas partial pressure is brought into the range of 2.5×
10−
6 to 7×
10−
4, or only an inert gas is introduced and thereby the ratio of the oxygen partial pressure to the water partial pressure in the film fabricating atmosphere is made substantially zero and the ratio of the water partial pressure to the inert gas partial pressure is brought into the range of 2.5×
10−
6 to 7×
10−
4,(a-4) the temperature of the above-mentioned film is kept below 80°
C. during the film fabricating, and(a-5) thus, a laminate having a transparent conductive film of 4×
10−
4 to 1×
10−
3 Ω
·
cm in a resistivity fabricated onto the substrate film is obtained, and(b) subsequently, the laminate is heat-treated at 80 to 150°
C. for 0.5 to 12 hrs in an oxygen-containing atmosphere, and thereby the resistivity of the transparent conductive film is lowered below the resistivity before the heat treatment to make it 1.3×
10−
4 to 3×
10−
4 Ω
·
cm.
- Sn—
Specification