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Semiconductor device and semiconductor substrate, and method for fabricating the same

  • US 6,617,182 B2
  • Filed: 09/14/1999
  • Issued: 09/09/2003
  • Est. Priority Date: 09/14/1998
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a semiconductor device, comprising the steps of:

  • forming a crystal plane on a primary surface of a substrate of a III group nitride compound material to provide a stepped portion so that a surface orientation of the crystal plane is different from a surface orientation of the primary surface of the substrate;

    wherein the primary surface is in a convex configuration with respect to the crystal plane;

    wherein the crystal plane forming step includes the steps of forming a mask having a predetermined pattern on the substrate, selectively etching a portion of the substrate not covered with the mask, and removing the mask; and

    forming a semiconductor layered structure made of a III group nitride compound material directly on both the crystal plane and the primary surface of the substrate, wherein the crystal plane is formed so as to be a tilted surface with respect to the primary surface, whereby a low-defect region in the semiconductor layered structure is provided containing fewer defects as compared to surrounding regions.

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