Method for making a semiconductor device having a high-k gate dielectric
First Claim
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1. A method for making a semiconductor device comprising:
- forming a high-k gate dielectric layer on a substrate;
forming an insulating layer on the high-k gate dielectric layer that is compatible with the high-k gate dielectric layer and a gate electrode to be formed on the insulating layer; and
forming a layer that comprises polysilicon on the insulating layer;
wherein the insulating layer comprises silicon nitride or a metallic nitride;
the substrate comprises silicon; and
the high-k gate dielectric layer Is formed by atomic layer chemical vapor deposition, and is between about 5 angstroms and about 60 angstroms thick.
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Abstract
A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer that has a dielectric constant that is greater than the dielectric constant of silicon dioxide. An insulating layer, which is compatible with the dielectric layer and a gate electrode to be formed on the insulating layer, is formed on the dielectric layer, and a gate electrode is then formed on the insulating layer.
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10 Claims
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1. A method for making a semiconductor device comprising:
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forming a high-k gate dielectric layer on a substrate;
forming an insulating layer on the high-k gate dielectric layer that is compatible with the high-k gate dielectric layer and a gate electrode to be formed on the insulating layer; and
forming a layer that comprises polysilicon on the insulating layer;
wherein the insulating layer comprises silicon nitride or a metallic nitride;
the substrate comprises silicon; and
the high-k gate dielectric layer Is formed by atomic layer chemical vapor deposition, and is between about 5 angstroms and about 60 angstroms thick.- View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for making a semiconductor device comprising:
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forming a high-k gate dielectric layer on a substrate, the high-k gate dielectric layer being less than about 100 angstroms thick and comprising a material selected from the group consisting of hafnium oxide, zirconium oxide, titanium oxide, and aluminum oxide;
forming on the high-k gate dielectric layer an insulating layer that comprises silicon nitride or a metallic nitride and that is between about 3 angstroms and about 25 angstroms thick;
forming a layer that comprises polysilicon on the insulating layer; and
etching the polysilicon containing layer, the insulating layer, and the high-k gate dielectric layer. - View Dependent Claims (8, 9, 10)
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Specification