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Method for making a semiconductor device having a high-k gate dielectric

  • US 6,617,210 B1
  • Filed: 05/31/2002
  • Issued: 09/09/2003
  • Est. Priority Date: 05/31/2002
  • Status: Expired due to Term
First Claim
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1. A method for making a semiconductor device comprising:

  • forming a high-k gate dielectric layer on a substrate;

    forming an insulating layer on the high-k gate dielectric layer that is compatible with the high-k gate dielectric layer and a gate electrode to be formed on the insulating layer; and

    forming a layer that comprises polysilicon on the insulating layer;

    wherein the insulating layer comprises silicon nitride or a metallic nitride;

    the substrate comprises silicon; and

    the high-k gate dielectric layer Is formed by atomic layer chemical vapor deposition, and is between about 5 angstroms and about 60 angstroms thick.

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