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Plasma etching method using polymer deposition and method of forming contact hole using the plasma etching method

  • US 6,617,253 B1
  • Filed: 07/20/2000
  • Issued: 09/09/2003
  • Est. Priority Date: 07/20/1999
  • Status: Expired due to Term
First Claim
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1. A plasma etching method, in which a dielectric film on a wafer is etched by plasma using a photoresist pattern as a mask, the method comprising:

  • (a) plasma etching an upper portion of the dielectric film using the photoresist pattern as a mask by establishing an average power of a power supply within a given range, to form an opening the dielectric film;

    (b) selectively depositing a polymer layer on the photoresist pattern, the polymer layer having a thick portion on the surface of the photoresist pattern and a substantially thinner portion on the surface of the opening in the dielectric film; and

    (c) plasma etching the remaining portion of the dielectric film using the photoresist pattern and the polymer layer as a mask by establishing the average power of the power supply within the given range.

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