Field-effect-controllable semiconductor configuration with a laterally extending channel zone

• US 6,617,640 B2
• Filed: 03/23/2001
• Issued: 09/09/2003
• Est. Priority Date: 03/23/2000
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Tihanyi, Jenoe
• Primary Examiner(s): Prenty, Mark V.
• Application Number:
  US09/815,657
• Publication Number:
  US 20010025983A1
• Time in Patent Office: 900 Days
• Field of Search: 257/330, 257/403, 257/408
• US Class Current: 257/330
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/4236 within a trench, e.g. trench gate electrode, groove gate electrode
• CPC Class Codes: H01L 29/7827 Vertical transistors H01L29/7802, H01L29/78642 take precedence
• CPC Class Codes: H01L 29/7828 without inversion channel, e.g. vertical ACCUFETs, normally-on vertical MISFETs
• CPC Class Codes: H01L 29/7838 without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs

Abstract

A semiconductor configuration includes a semiconductor body with a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, and at least one control electrode surrounded by an insulation layer. The channel zone is formed between the first connection zone and the second connection zone. The at least one control electrode extends, adjacent to the channel zone, from the first connection zone to the second connection zone. The first connection zone, the second connection zone and the at least one control electrode extend in the vertical direction such that, when a voltage is applied between the first and second connection zones, a current path along the lateral direction is formed in the channel zone.

Claims

1. A semiconductor configuration, comprising:

a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer;

said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;

said insulation layer surrounding said at least one control electrode;

said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;

said semiconductor body defining a vertical direction and a first lateral direction extending from said first connection zone to said second connection zone and a second lateral direction transverse to the first lateral direction;

said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone;

said at least one control electrode being a substantially plate-shaped control electrode having a respective longitudinal extent in the vertical direction and in the first lateral direction and a lateral extent in the second lateral direction; and

said respective longitudinal extent being greater than said lateral extent.

2. A semiconductor configuration, comprising:

a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer, said first connection zone having a first zone with a first dopant concentration and a second zone with a second dopant concentration, said first dopant concentration being higher than said second dopant concentration, and said second zone being formed between said first zone and said channel zone;

said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;

said insulation layer surrounding said at least one control electrode;

said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;

said semiconductor body defining a vertical direction and a lateral direction; and

said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone.

13. The semiconductor configuration according to claim 2, wherein said first dopant concentration is higher than 10¹⁸ cm⁻

3.

14. The semiconductor configuration according to claim 2, wherein said second dopant concentration is substantially 5×

10¹⁵ cm<sup>−

3</sup>.

3. A semiconductor configuration, comprising:

a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer, said first connection zone having a first zone with a first dopant concentration and a second zone with a second dopant concentration, and said second zone completely surrounding said first zone in the lateral direction;

said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;

said insulation layer surrounding said at least one control electrode;

said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;

said semiconductor body defining a vertical direction and a lateral direction; and

said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone.

4. A semiconductor configuration, comprising:

a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer;

said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;

said insulation layer surrounding said at least one control electrode;

said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;

said semiconductor body defining a vertical direction and a lateral direction;

said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone;

said first connection zone having a first zone with a first dopant concentration and a second zone with a second dopant concentration;

said second connection zone having a third dopant concentration;

said channel zone having a fourth dopant concentration; and

said fourth dopant concentration being lower than said first and third dopant concentrations.

15. The semiconductor configuration according to claim 4, wherein said fourth dopant concentration is less than 10¹⁴ cm⁻

3.

5. A semiconductor configuration, comprising:

a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer;

said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;

said insulation layer surrounding said at lease one control electrode;

said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;

said semiconductor body defining a vertical direction and a lateral direction;

said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone;

said semiconductor body having a rear side;

a layer of the first conductivity type being disposed at said rear side;

said first connection zone having a first zone with a first dopant concentration and a second zone with a second dopant concentration;

said layer having a third dopant concentration;

said third dopant concentration substantially corresponding to said first dopant concentration; and

said layer being connected to said first connection zone.

6. A semiconductor configuration, comprising:

a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, an insulation layer, a further first connection zone, and a further channel zone extending between said further first connection zone and said second connection zone;

said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;

said insulation layer surrounding said at least one control electrode;

said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;

said semiconductor body defining a vertical direction and a lateral direction;

said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone; and

said at least one control electrode extending, adjacent to said second connection zone, said channel zone and said further channel zone, from said first connection zone to said further first connection zone.

7. A semiconductor configuration, comprising:

a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer;

said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;

said insulation layer surrounding said at least one control electrode;

said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;

said semiconductor body defining a vertical direction and a lateral direction;

said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone;

said semiconductor body having a front side and a rear side; and

said first connection zone extending, in the vertical direction, from said front side to said rear side of said semiconductor body.

8. A semiconductor configuration, comprising:

a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, and an insulation layer;

said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;

said insulation layer surrounding said at least one control electrode;

said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;

said semiconductor body defining a vertical direction and a lateral direction;

said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone; and

said semiconductor body having a rear side; and

an electrically conductive layer disposed on said rear side of said semiconductor body for making contact with said first connection zone.

9. A semiconductor configuration, comprising:

a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, an insulation layer, and an electrically conductive zone introduced in said first connection zone for making contact with said first connection zone;

said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;

said insulation layer surrounding said at least one control electrode;

said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;

said semiconductor body defining a vertical direction and a lateral direction; and

said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second connection zones, a current path along the lateral direction is formed in the channel zone.

10. The semiconductor configuration according to claim 9, wherein said electrically conductive zone is formed of a material selected from the group consisting of polysilicon and a metal.

11. A semiconductor configuration, comprising:

a semiconductor body including a first connection zone of a first conductivity type, a second connection zone of the first conductivity type, a channel zone of the first conductivity type, at least one control electrode, an insulation layer, and an electrically conductive zone introduced in said second connection zone for making contact with said second connection zone;

said channel zone of the first conductivity type being formed between said first connection zone and said second connection zone;

said insulation layer surrounding said at least one control electrode;

said at least one control electrode extending, adjacent to said channel zone, from said first connection zone to said second connection zone;

said semiconductor body defining a vertical direction and a lateral direction; and

said first connection zone, said second connection zone and said at least one control electrode extending in the vertical direction such that, when a voltage is applied between said first and second Connection zones, a current path along the lateral direction is formed in the channel zone.

12. The semiconductor configuration according to claim 11, wherein said electrically conductive zone is formed of a material selected from the group consisting of polysilicon and a metal.