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Methods to utilize ultrasonic energy to reduce the initial contact forces in known-good-die or permanent contact systems

  • US 6,619,532 B2
  • Filed: 07/15/2002
  • Issued: 09/16/2003
  • Est. Priority Date: 02/23/1998
  • Status: Expired due to Term
First Claim
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1. A method for forming bonds between a semiconductor die having at least one bond pad on a first surface thereof and an interconnect having at least one contact member on a connection surface thereof, said at least one contact member for penetrating a layer of material on an outer surface of said at least one bond pad for connecting said at least one contact member to said at least one bond pad of said semiconductor die, said method comprising:

  • aligning said semiconductor die and said interconnect;

    bringing together said connection surface of said interconnect having said at least one contact member aligned proximate said at least one bond pad on said first surface of said semiconductor die;

    providing a force to at least one of said semiconductor die and said interconnect;

    engaging said semiconductor die and said interconnect using said force; and

    substantially ultrasonically vibrating one of said semiconductor die and said interconnect using vibrational energy having said at least one contact member of said interconnect penetrating a portion of said at least one bond pad of said semiconductor die, forming an electrical connection.

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