Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device

• US 6,620,238 B2
• Filed: 10/02/2001
• Issued: 09/16/2003
• Est. Priority Date: 07/31/1998
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Yuasa, Takayuki, Tsuda, Yuhzoh
• Primary Examiner(s): Wille, Douglas A.
• Application Number:
  US09/970,431
• Publication Number:
  US 20020014681A1
• Time in Patent Office: 714 Days
• Field of Search: 117/103, 117/90, 257/96, 438/42
• US Class Current: 117/90
• CPC Class Codes: H01L 21/02378 Silicon carbide
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/0243 Surface structure
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/02647 Lateral overgrowth
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

A nitride semiconductor structure includes: a substrate having a growth surface, a convex portion and a concave portion being formed on the growth surface; and a nitride semiconductor film grown on the growth surface. A cavity is formed between the nitride semiconductor film and the substrate in the concave portion.

Claims

1. A nitride semiconductor structure comprising:

a substrate having a growth surface, a convex portion and a concave portion being formed on the growth surface; and

a nitride semiconductor film grown on the growth surface,

wherein a cavity is formed between the nitride semiconductor film and the substrate in the concave portion.

2. A nitride semiconductor structure according to claim 1, wherein the convex portion and the concave portion comprise a plurality of parallel grooves.

3. A nitride semiconductor structure according to claim 2,

wherein the plurality of grooves have a width b and a depth h such that b≦ about 10 μ

m and h≧

0.2×

b, and

wherein adjoining one of the plurality of grooves are spaced apart from each other so as to retain a distance of about 20 μ

m or less between center lines thereof.

4. A nitride semiconductor structure according to claim 2,

wherein the plurality of grooves have a width b and a depth h such that b≦

about 10 μ

m and h≧

b, and

wherein adjoining one of the plurality of grooves are spaced apart from each other so as to retain a distance of about 20 μ

m or less between center lines thereof.

5. A nitride semiconductor structure according to claim 2, wherein the plurality of grooves are formed along a <

1-100>

direction of the nitride semiconductor.

6. A nitride semiconductor structure according to claim 2, wherein the grooves are formed so as to extend along a cleavage plane or an etching stable plane of the substrate.

7. A nitride semiconductor structure according to claim 2, wherein the growth surface of the substrate comprises a nitride semiconductor, the plurality of grooves being formed along a <

11-20>

direction of the nitride semiconductor.

8. A nitride semiconductor structure according to claim 3, wherein the growth surface of the substrate comprises a nitride semiconductor, the plurality of grooves being formed along a <

11-20>

direction of the nitride semiconductor.

9. A nitride semiconductor structure according to claim 4, wherein the growth surface of the substrate comprises a nitride semiconductor, the plurality of grooves being formed along a <

11-20>

direction of the nitride semiconductor.

10. A nitride semiconductor structure according to claim 2, wherein the nitride semiconductor film has laterally grown from both sides of each groove to meet in the middle over the groove before the groove is filled with nitride semiconductor so as to leave a cavity between the nitride semiconductor film and the semiconductor in the groove.

11. A nitride semiconductor structure according to claim 2, wherein the bottom portion of each groove is constituted with a material of nitride semiconductor.

12. A nitride semiconductor structure comprising:

a substrate having a growth surface, a convex portion and a concave portion being formed on the growth surface;

and

a nitride semiconductor film grown on the growth surface,

wherein a cavity is formed between the nitride semiconductor film and the substrate in the concave portion,

wherein the convex portion and a concave portion comprise a plurality of parallel grooves, and

wherein the plurality of grooves have a with b and a depth h such that b≦

about 10 μ

m and h≧

0.2×

b, and

wherein adjoining one of the plurality of grooves are spaced apart from each other so as to retain a distance of about 20 μ

m or less between center lines thereof.