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Light-emitting device using group III nitride compound semiconductor

  • US 6,620,643 B1
  • Filed: 08/03/2000
  • Issued: 09/16/2003
  • Est. Priority Date: 08/05/1999
  • Status: Expired due to Fees
First Claim
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1. A group III nitride compound semiconductor light-emitting device comprising:

  • stacked semiconductor well layers having a quantum well structure and formed of a group III element nitride compound satisfying the formula (AlxGa1−

    x
    )yIn1−

    y
    N (0≦

    x≦

    1;

    0≦

    y≦

    1);

    wherein at least three of the well layers have compositional proportions which differ from one another, and at least one of the well layers comprises a red-light-emitting well layer having an acceptor impurity and a donor impurity, wherein a chromaticity of light emitted from each of the at least three well layers is controlled so that each of the at least three well layers emits light of different chromaticities, the lights emitted from all well layers being combined to form a mixed light, and wherein the mixed light is radiated from a light extraction surface and the different chromaticities within the mixed light are adjusted to obtain a white light.

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