Light-emitting device using group III nitride compound semiconductor
First Claim
1. A group III nitride compound semiconductor light-emitting device comprising:
- stacked semiconductor well layers having a quantum well structure and formed of a group III element nitride compound satisfying the formula (AlxGa1−
x)yIn1−
yN (0≦
x≦
1;
0≦
y≦
1);
wherein at least three of the well layers have compositional proportions which differ from one another, and at least one of the well layers comprises a red-light-emitting well layer having an acceptor impurity and a donor impurity, wherein a chromaticity of light emitted from each of the at least three well layers is controlled so that each of the at least three well layers emits light of different chromaticities, the lights emitted from all well layers being combined to form a mixed light, and wherein the mixed light is radiated from a light extraction surface and the different chromaticities within the mixed light are adjusted to obtain a white light.
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Abstract
A group III nitride compound semiconductor light-emitting device provides a multiple quantum well (MQW) active layer formed on an intermediate layer. The MQW active layer may include, for example, five semiconductor layers having a thickness of approximately 500 Å. The five layers of the MQW active layer may comprise two gallium nitride (GaN) barrier layers each having a thickness of approximately 100 Å and three well layers having different emission wavelengths. The barrier layers and the well layers are stacked alternately. The three well layers may include, for example, an Al0.1In0.9N red-light-emitting well layer having a thickness of approximately 20 Å and doped with impurities (zinc (Zn) and silicon (Si)), a non-doped In0.2Ga0.8N green-light-emitting well layer having a thickness of approximately 50 Å and a non-doped In0.05Ga0.95N blue-light-emitting well layer having a thickness of approximately 30 Å, wherein the three well layers are stacked in the order given.
91 Citations
19 Claims
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1. A group III nitride compound semiconductor light-emitting device comprising:
-
stacked semiconductor well layers having a quantum well structure and formed of a group III element nitride compound satisfying the formula (AlxGa1−
x)yIn1−
yN (0≦
x≦
1;
0≦
y≦
1);
wherein at least three of the well layers have compositional proportions which differ from one another, and at least one of the well layers comprises a red-light-emitting well layer having an acceptor impurity and a donor impurity, wherein a chromaticity of light emitted from each of the at least three well layers is controlled so that each of the at least three well layers emits light of different chromaticities, the lights emitted from all well layers being combined to form a mixed light, and wherein the mixed light is radiated from a light extraction surface and the different chromaticities within the mixed light are adjusted to obtain a white light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A group III nitride compound semiconductor light-emitting device comprising:
-
stacked semiconductor well layers having a quantum well structure and comprising a group III element nitride compound satisfying the formula (AlxGa1−
x)yIn1−
yN (0≦
x≦
1;
0≦
y≦
1);
wherein at least three of the well layers have compositional proportions which differ from one another;
an acceptor impurity and a donor impurity added to at least one of the well layers; and
wherein a chromaticity of light emitted from each of the at least three well layers is controlled so that each of the at least three well layers emits light of different chromaticities, the lights emitted from all well layers being combined to form a mixed light, and wherein the mixed light is radiated from a light extraction surface and the different chromaticities within the mixed light are adjusted to obtain a white light, wherein the well layers include a blue-light-emitting well layer, and a green-light-emitting well layer, both of which are formed of In1−
yGayN (0.7≦
y≦
1), and a red-light-emitting layer which is formed of AlyIn1−
yN (0≦
y≦
0.1) doped with zinc (Zn) and silicon (Si).- View Dependent Claims (13)
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14. A group III nitride compound semiconductor light-emitting device comprising:
-
a quantum well structure comprising a plurality of semiconductor well layers comprising a group III nitride compound satisfying the formula (AlxGa1−
x)yIn1−
yN (0≦
x≦
1;
0≦
y≦
1),wherein at least one of said well layers comprises a red-light-emitting well layer having an acceptor impurity and a donor impurity, and wherein light emitted from said red-light-emitting well layer is combined with light from other well layers to form a white light. - View Dependent Claims (15, 16, 17, 18)
a light extraction surface, said white light being radiated from said light extraction surface.
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17. A group III nitride compound semiconductor light-emitting device according to claim 14, wherein said red-light-emitting well layer comprises AlyIn1−
- yN, where 0≦
y≦
0.1.
- yN, where 0≦
-
18. A group III nitride compound semiconductor light-emitting device according to claim 14, wherein said plurality of semiconductor well layers comprises a blue-light-emitting well layer and a green-light-emitting well layer, each comprising In1−
- yGayN (0.7≦
y≦
1).
- yGayN (0.7≦
-
19. A method of fabricating a group III nitride compound semiconductor light-emitting device, said method comprising:
-
forming a quantum well structure comprising a plurality of semiconductor well layers comprising a group III nitride compound satisfying the formula (AlxGa1−
x)yIN1−
yN (0≦
x≦
1;
0≦
y≦
1,wherein at least one of said well layers comprises a red-light-emitting well layer having an acceptor impurity and a donor impurity, and wherein light emitted from said red-light-emitting well layer is combined with light from other well layers to form a white light.
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Specification