Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
First Claim
1. A method for depositing an aluminum-containing layer on a substrate disposed in a processing chamber, said method comprising:
- forming an aluminum-containing monolayer upon said substrate by flowing an aluminum-containing compound and a liquid solvent into a vaporizer and then delivering the aluminum-containing process gas onto said substrate;
reacting oxygen with said aluminum-containing monolayer by exposing said aluminum-containing monolayer to an oxygen-containing precursor to produce a layer of Al2O3; and
repeating forming said aluminum-containing layer and reacting oxygen with said aluminum-containing monolayer to form said layer of Al2O3 with a desired thickness.
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Accused Products
Abstract
A semiconductor processing chamber has been utilized to perform sequential deposition of high-K Al2O3 thin films on a substrate disposed in the chamber employing low viscosity precursors. The method commences with introduction of an aluminum precursor into the processing chamber. In this manner, a monolayer of aluminum precursor is chemisorbed onto the substrate surface. Thereafter, non-chemisorbed aluminum precursor is purged from the processing chamber, followed by introduction of an oxygen precursor. The oxygen precursor reacts with the chemisorbed layer, resulting in a monolayer of Al2O3. Finally, excess oxygen precursor and by-products of the reaction are purged completing the sequential deposition cycle. The sequential deposition cycle can be repeated to grow the Al2O3 film to a desired thickness.
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Citations
21 Claims
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1. A method for depositing an aluminum-containing layer on a substrate disposed in a processing chamber, said method comprising:
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forming an aluminum-containing monolayer upon said substrate by flowing an aluminum-containing compound and a liquid solvent into a vaporizer and then delivering the aluminum-containing process gas onto said substrate;
reacting oxygen with said aluminum-containing monolayer by exposing said aluminum-containing monolayer to an oxygen-containing precursor to produce a layer of Al2O3; and
repeating forming said aluminum-containing layer and reacting oxygen with said aluminum-containing monolayer to form said layer of Al2O3 with a desired thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for depositing an aluminum-containing layer onto a substrate disposed in a processing chamber, said method comprising:
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heating said substrate to a temperature in a range of 100°
C. to 500°
C., inclusive;
establishing a pressure within said processing chamber in a range of 0.1 Torr to 500 Torr;
forming an aluminum-containing monolayer upon said substrate by flowing an aluminum-containing compound and a liquid solvent into a vaporizer and then delivering the aluminum-containing process gas onto said substrate;
reacting oxygen with said aluminum-containing monolayer by exposing said aluminum-containing monolayer to an oxygen-containing precursor to produce a layer of Al2O3 and by-products; and
repeating forming said aluminum-containing layer and reacting oxygen with said aluminum-containing monolayer to form said layer of Al2O3 with a desired thickness. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A processing system for forming an aluminum-containing layer on a substrate, said system comprising:
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a body defining a processing chamber;
a cover disposed over the body and adapted to deliver gases into the processing chamber;
a holder disposed within said processing chamber to support said substrate;
an oxygen-containing precursor source mounted on the cover;
an aluminum-containing precursor in fluid communication with the cover;
a temperature control system in thermal communication with said processing chamber;
a pressure control system in fluid communication with said processing chamber;
a controller in electrical communication with the cover, said temperature control system, and said pressure control system; and
a memory in data communication with said controller, said memory comprising a computer-readable medium having a computer-readable program embodied therein, said computer-readable program including a first set of instructions for controlling the cover, said pressure control system and said temperature control system to form an aluminum-containing monolayer upon said substrate by chemisorption of said aluminum-containing precursor, and a second set of instructions to control said gas delivery system, said pressure control system and said temperature control system to chemisorb oxygen into said aluminum-containing monolayer by exposing said aluminum-containing monolayer to said oxygen-containing precursor to produce a layer of Al2O3 and by-products, and a third set of instructions to control the cover, said pressure control system and said temperature control system to repeat forming said aluminum-containing layer and chemisorbing oxygen into said aluminum-containing monolayer to form said layer of Al2O3 with a desired thickness. - View Dependent Claims (20, 21)
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Specification