×

Semiconductor device and method of manufacturing the same

  • US 6,621,535 B1
  • Filed: 04/21/1999
  • Issued: 09/16/2003
  • Est. Priority Date: 04/24/1998
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor device comprising:

  • a thin film transistor formed over an insulating surface;

    a first insulating film formed over the thin film transistor;

    a second insulating film formed on the first insulating film;

    a diamond-like carbon film formed on the second insulating film;

    a third insulating film formed over the diamond-like carbon film; and

    a pixel electrode formed on the third insulating film.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×