Semiconductor device and method of manufacturing the same

• US 6,621,535 B1
• Filed: 04/21/1999
• Issued: 09/16/2003
• Est. Priority Date: 04/24/1998
• Status: Expired due to Fees

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Fukada, Takeshi
• Primary Examiner(s): Parker, Kenneth
• Application Number:
  US09/296,042
• Time in Patent Office: 1,609 Days
• Field of Search: 349/110, 349/111, 349/122, 349/138, 349/43, 349/40
• US Class Current: 349/40
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

Abstract

There is provided a highly reliable semiconductor device in which electrostatic breakdown can be prevented. A diamond-like carbon (DLC) film is formed on a surface of an insulating substrate, and thereafter, a thin film transistor is formed on the insulating substrate. This DLC film allows charges of static electricity to flow and can prevent electrostatic breakdown of the thin film transistor.

Claims

1. A semiconductor device comprising:

a thin film transistor formed over an insulating surface;

a first insulating film formed over the thin film transistor;

a second insulating film formed on the first insulating film;

a diamond-like carbon film formed on the second insulating film;

a third insulating film formed over the diamond-like carbon film; and

a pixel electrode formed on the third insulating film.

2. A device according to claim 1, wherein the second insulating film comprises organic resin.

3. A device according to claim 2, wherein the second insulating film is selected from the group consisting of polyimide, polyamide, polyimide amide, and acryl.

4. A device according to claim 1, wherein the substrate is a quartz substrate.

5. A device according to claim 1, wherein the diamond-like carbon film has a specific resistance 10⁷ to 10¹⁴ Ω

cm.

6. A device according to claim 1, wherein said semiconductor device is an active matrix type display device having a pixel region and a driver region on the substrate.

7. A device according to claim 1, wherein said semiconductor device is used for an electronic device selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggles-type display, a player apparatus comprising a recording medium, a digital camera, a front type projector, and a rear type projector.

8. A device according to claim 1, wherein the diamond-like carbon film has Vickers hardness of 2,000 to 5,000 kgf/mm².

9. A device according to claim 1, wherein the diamond-like carbon film has a thickness of 5 to 100 nm.

10. A device according to claim 1, wherein the diamond-like carbon film has a thickness of 50 to 200 nm.

11. A device according to claim 1, wherein the pixel electrode comprises a transparent conductive film.

12. A device according to claim 1, wherein the pixel electrode comprises a conductive film having light-reflecting properties.

43. A method according to claim 1, wherein said electronic device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggles-type display, a player apparatus comprising a recording medium, a digital camera, a front type projector, and a rear type projector.

13. A method of manufacturing a semiconductor device, comprising the steps of:

forming a thin film transistor over an insulating surface;

forming a first insulating film over the thin film transistor;

forming a second insulating film on the first insulating film;

forming a diamond-like carbon film on the second insulating film;

forming a third insulating film over the diamond-like carbon film; and

forming a pixel electrode on the third insulating film.

14. A method according to claim 13, wherein the second insulating film comprises organic resin.

15. A method according to claim 14, wherein the second insulating film is selected from the group consisting of polyimide, polyamide, polyimide amide, and acryl.

16. A method according to claim 13, wherein the substrate is a quartz substrate.

17. A method according to claim 13, wherein the diamond-like carbon film has a specific resistance 10⁷ to 10¹⁴ Ω

cm.

18. A method according to claim 13, wherein said semiconductor device is an active matrix type display device having a pixel region and a driver region on the substrate.

19. A method according to claim 13, wherein said semiconductor device is used for an electronic device.selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggles-type display, a player apparatus comprising a recording medium, a digital camera, a front type projector, and a rear type projector.

20. A method according to claim 13, wherein the diamond-like carbon film has Vickers hardness of 2,000 to 5,000 kgf/mm².

21. A method according to claim 13, wherein the diamond-like carbon film has a thickness of 5 to 100 nm.

22. A method according to claim 13, wherein the diamond-like carbon film has a thickness of 50 to 200 nm.

23. A method according to claim 13, wherein the pixel electrode comprises a transparent conductive film.

24. A method according to claim 13, wherein the pixel electrode comprises a conductive film having light-reflecting properties.

25. An electronic device comprising:

a thin film transistor formed over an insulating surface;

a first insulating film formed over the thin film transistor;

a second insulating film formed on the first insulating film;

a diamond-like carbon film formed on the second insulating film;

a third insulating film formed over the diamond-like carbon film; and

a pixel electrode formed on the third insulating film.

26. A device according to claim 25, wherein the second insulating film comprises organic resin.

27. A device according to claim 26, wherein the second insulating film is selected from the group consisting of polyimide, polyamide, polyimide amide, and acryl.

28. A device according to claim 25, wherein the substrate is a quartz substrate.

29. A device according to claim 25, wherein the diamond-like carbon film has a specific resistance 10⁷ to 10¹⁴ Ω

cm.

30. A device according to claim 25, wherein said electronic device comprises an active matrix type display device having a pixel region and a driver region on the substrate.

31. A device according to claim 25, wherein said electronic device is selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggles-type display, a player apparatus comprising a recording medium, a digital camera, a front type projector, and a rear type projector.

32. A device according to claim 25, wherein the diamond-like carbon film has Vickers hardness of 2,000 to 5,000 kgf/mm².

33. A device according to claim 25, wherein the diamond-like carbon film has a thickness of 5 to 100 nm.

34. A device according to claim 25, wherein the diamond-like carbon film has a thickness of 50 to 200 nm.

35. A device according to claim 25, wherein the pixel electrode comprises a transparent conductive film.

36. A device according to claim 25, wherein the pixel electrode comprises a conductive film having light-reflecting properties.

37. A method of manufacturing an electronic device, comprising the steps of:

forming a thin film transistor over an insulating surface;

forming a first insulating film over the thin film transistor;

forming a second insulating film on the first insulating film;

forming a diamond-like carbon film on the second insulating film;

forming a third insulating film over the diamond-like carbon film; and

forming a pixel electrode on the third insulating film.

38. A method according to claim 37, wherein the second insulating film comprises organic resin.

39. A method according to claim 38, wherein the second insulating film is selected from the group consisting of polyimide, polyamide, polyimide amide, and acryl.

40. A method according to claim 37, wherein the substrate is a quartz substrate.

41. A method according to claim 37, wherein the diamond-like carbon film has a specific resistance 10⁷ to 10¹⁴ Ω

cm.

42. A method according to claim 37, wherein said electronic device comprises an active matrix type display device having a pixel region and a driver region on the substrate.

44. A method according to claim 37, wherein the diamond-like carbon film has Vickers hardness of 2,000 to 5,000 kgf/mm².

45. A method according to claim 37, wherein the diamond-like carbon film has a thickness of 5 to 100 nm.

46. A method according to claim 37, wherein the diamond-like carbon film has a thickness of 50 to 200 nm.

47. A method according to claim 37, wherein the pixel electrode comprises a transparent conductive film.

48. A method according to claim 37, wherein the pixel electrode comprises a conductive film having light-reflecting properties.

49. A semiconductor device comprising:

a thin film transistor formed over an insulating surface;

an insulating film formed over the thin film transistor;

a diamond-like carbon film formed on the insulating film;

a light shielding film formed on the diamond-like carbon film; and

a pixel electrode formed over the light shielding film.

50. A device according to claim 49, wherein the insulating film comprises organic resin.

51. A device according to claim 50, wherein the insulating film is selected from the group consisting of polyimide, polyamide, polyimide amide, and acryl.

52. A device according to claim 49, wherein the substrate is a quartz substrate.

53. A device according to claim 49, wherein the diamond-like carbon film has a specific resistance 10⁷ to 10¹⁴ Ω

cm.

54. A device according to claim 49, wherein the diamond-like carbon film has Vickers hardness of 2,000 to 5,000 kgf/mm².

55. A device according to claim 49, wherein said semiconductor device is an active matrix type display device having a pixel region and a driver region on the substrate.

56. A device according to claim 49, wherein said semiconductor device is used for an electronic device selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggles-type display, a player apparatus comprising a recording medium, a digital camera, a front type projector, and a rear type projector.

57. A method of manufacturing a semiconductor device, comprising the steps of:

forming a thin film transistor over an insulating surface;

forming an insulating film over the thin film transistor;

forming a diamond-like carbon film on the insulating film;

forming light shielding film formed on the diamond-like carbon film; and

forming a pixel electrode over the light shielding film.

58. A method according to claim 57, wherein the insulating film comprises organic resin.

59. A method according to claim 58, wherein the insulating film is selected from the group consisting of polyimide, polyamide, polyimide amide, and acryl.

60. A method according to claim 57, wherein the substrate is a quartz substrate.

61. A method according to claim 57, wherein the diamond-like carbon film has a specific resistance 10⁷ to 10¹⁴ Ω

cm.

62. A method according to claim 57, wherein the diamond-like carbon film has Vickers hardness of 2,000 to 5,000 kgf/mm².

63. A method according to claim 57, wherein said semiconductor device is an active matrix type display device having a pixel region and a driver region on the substrate.

64. A method according to claim 57, wherein said semiconductor device is used for an electronic device selected from the group consisting of a personal computer, a video camera, a mobile computer, a goggles-type display, a player apparatus comprising a recording medium, a digital camera, a front type projector, and a rear type projector.