Plasma processing apparatus

• US 6,622,650 B2
• Filed: 11/30/2000
• Issued: 09/23/2003
• Est. Priority Date: 11/30/1999
• Status: Expired due to Fees

• Current Assignee: Makoto Ando, Tokyo Electron Limited, Yasuyoshi Yasaka
• Original Assignee: Makoto Ando, Tokyo Electron Limited, Yasuyoshi Yasaka
• Inventors: Ishii, Nobuo, Yasaka, Yasuyoshi
• Primary Examiner(s): Hassanzadek, Parviz
• Application Number:
  US09/726,050
• Publication Number:
  US 20010036465A1
• Time in Patent Office: 1,027 Days
• Field of Search: 118/723.MW, 118/723.ME, 118/723.MR, 118/723.MA, 118/723.E, 118/723.AN, 156/345.41, 156/345.42, 156/345.47, 204/298.38, 438/726, 438/706, 438/711, 427/575, 427/569, 427/585
• US Class Current: 118/723.0MW
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence

Abstract

A plasma processing system may include a vacuum vessel, a substrate table arranged in the vacuum vessel, and a radio-frequency power supply system for generating high-frequency waves. A waveguide may be provided for guiding high-frequency waves into the vacuum vessel, and a dielectric member may be arranged at an end portion of the waveguide. The plasma processing system may also include a conductive film arranged on the dielectric member and facing the substrate table, wherein the conductive film may have a thickness smaller than or approximately equal to a skin thickness of the conductive film.

Claims

1. A plasma processing system comprising:

a vacuum vessel;

a substrate table arranged in the vacuum vessel for supporting a substrate;

a microwave power supply system for generating high-frequency waves;

a waveguide for guiding said high-frequency waves into the vacuum vessel;

a dielectric member arranged at an end portion of the waveguide; and

a conductive film of a metal coated on the lower surface of said dielectric member, the conductive film facing the substrate table, the conductive film having a thickness smaller than a skin thickness of the conductive film so that standing wave formation in the vacuum vessel is suppressed while allowing high-frequency waves to penetrate the conductive film toward the substrate.

2. The plasma processing system of claim 1, wherein the waveguide comprises an inner tube and an outer tube arranged coaxially with the inner tube, wherein the inner tube penetrates the dielectric member.

3. The plasma processing system of claim 1, wherein the waveguide comprises an inner tube and an outer tube arranged coaxially with the inner tube, and the outer tube comprises an expanded end part in which the dielectric member is arranged.

4. The plasma processing system of claim 3, wherein an interior of the expanded end part is entirely filled with the dielectric member.

5. The plasma processing system of claim 1, wherein the thickness of the conductive film decreases from a central portion thereof toward a peripheral portion thereof.