Semiconductor device and method for producing the same

• US 6,624,058 B1
• Filed: 11/21/2000
• Issued: 09/23/2003
• Est. Priority Date: 06/22/2000
• Status: Expired due to Fees

• Current Assignee: Oki Semiconductor Company Limited (ROHM Co., Ltd.)
• Original Assignee: OKI Electric Industry Company Limited
• Inventors: Kazama, Takao
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Kebede, Brook
• Application Number:
  US09/716,463
• Time in Patent Office: 1,036 Days
• Field of Search: 438/106-127, 438/612-617, 257/678-700, 257/701-713, 257/734-738, 257/790, 257/796
• US Class Current: 438/612
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85 using a wire connector
• CPC Class Codes: H01L 2224/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/16 Fillings or auxiliary members in containers or encapsulations, e.g. centering rings H01L23/42, H01L23/552 take precedence
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/1815 : Shape
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: Y10T 436/179228 : Both nitrogen oxide and dioxide

Abstract

There is provided a semiconductor device in which substantially no deformation of a bonded wire occurs, and a method for producing the semiconductor device. A wiring pattern of a wiring substrate and an electrode of an IC chip are connected by a wire. A contact prevention resin whose height is higher than the highest position of the bonded wire, is adhered to the approximate center of the surface of the IC chip. If the wiring substrate warps due to heat from the lower metallic mold, an inner surface of an upper metallic mold placed on the wiring substrate abuts against the contact prevention resin, and decrease warpage of the wiring substrate. Accordingly, the wire is kept from contacting the inner surface of the upper metallic mold. Thereafter, the IC chips, the wires, and the like are sealed by injecting a mold resin into the molds.

Claims

1. A method for producing a semiconductor device, comprising the steps of:

(a) bonding a plurality of semiconductor elements onto a wiring substrate, the wiring substrate having a wiring pattern formed thereon for external connection, and each of the semiconductor elements having a surface with an electrode thereon;

(b) connecting the electrode on the surface of each of the semiconductor elements to the wiring pattern on the wiring substrate with a metal wire;

(c) fixing a contact prevention resin to the surface of at least one of the plurality of semiconductor elements, the contact prevention resin being at a position corresponding substantially to the center of the at least one semiconductor element, and being sized so as not to cover the electrode on, and the metal wire connected to, the at least one semiconductor element;

(d) placing the wiring substrate, with the surface of each of the semiconductor elements facing upward, in a lower metallic mold for mold processing;

(e) putting an upper metallic mold on the wiring substrate placed in the lower metallic mold, the upper metallic mold including a protruding portion which contacts the wire substrate at the periphery thereof for molding processing, to prevent warping of the wiring substrate;

(f) injecting mold resin into a space between the wiring substrate and the upper metallic mold for sealing the semiconductor elements and the metal wires on the wiring substrate; and

(g) cutting the wiring substrate sealed by the mold resin into portions corresponding to the plurality of semiconductor elements to thereby form a plurality of semiconductor devices.

2. A method for producing a semiconductor device according to claim 1, wherein the contact prevention resin has a predetermined height that is selected to be higher than a maximum height of metal wire above the surface of any of the semiconductor elements.

3. A method for producing a semiconductor device according to claim 1, wherein the contact prevention resin is fixed to the surfaces of each of the semiconductor elements.

4. A method for producing a semiconductor device, comprising the steps of:

(a) bonding a plurality of semiconductor elements onto a wiring substrate, the wiring substrate having a wiring pattern for external connection formed thereon, and each of the semiconductor elements having a surface with an electrode thereon;

(b) connecting the electrode on the surface of each of the semiconductor elements to the wiring pattern on the wiring substrate with a metal wire;

(c) placing, in a lower metallic mold for mold processing, the wiring substrate with the surfaces of the semiconductor elements facing upward;

(d) placing an upper metallic mold for mold processing on the wiring substrate placed in the lower metallic mold, the upper mold having a contact prevention protruding portion on an internal surface of the upper metallic mold;

(e) injecting mold resin into a space between the wiring substrate and the upper metallic mold sealing the semiconductor elements and the metal wires on the wiring substrate; and

(f) cutting the wiring substrate sealed by the mold resin into portions corresponding to the plurality of semiconductor elements to thereby form a plurality of semiconductor devices;

wherein the protruding portion on the internal surface of the upper metallic mold is formed at a position corresponding substantially to the center of at least one of the plurality of semiconductor elements bonded to the wiring substrate, and a dimension of the protruding portion in a direction in which it protrudes is greater than a distance between the surface of the semiconductor element and a highest maximum position of the metal wire, and smaller than a height of the mold resin injected onto the semiconductor element, relative to the surfaces of the semiconductor element.

5. A method for producing a semiconductor device, comprising the steps of:

(a) bonding a plurality of semiconductor elements onto a wiring substrate, the wiring substrate having a wiring pattern for external connection formed thereon, and each of the semiconductor elements having a surface with an electrode thereon;

(b) connecting the electrode on the surface of each of the semiconductor elements to the wiring pattern on the wiring substrate with a metal wire;

(c) placing, in a lower metallic mold for mold processing, the wiring substrate with the surfaces of the semiconductor elements facing upward;

(d) placing an upper metallic mold for mold processing on the wiring substrate placed in the lower metallic mold, the upper mold having a contact prevention protuding portion on an internal surface of the upper metallic mold;

(e) injecting mold resin into a space between the wiring substrate and the upper metallic mold sealing the semiconductor elements and the metal wires on the wiring substrate; and

(f) cutting the wiring substrate sealed by the mold resin into portions corresponding to the plurality of semiconductor elements to thereby form a plurality of semiconductor devices;

wherein the protruding portion on the internal surface of the upper metallic mold is formed at a position corresponding substantially to the center of at least one of the plurality of semiconductor elements bonded to the wiring substrate, and a dimension of the protruding portion in a direction in which it protrudes is greater than a distance between the surface of the semiconductor element and a highest maximum position of the metal wire, and smaller than a height of the mold resin injected onto the semiconductor element, relative to the surfaces of the semiconductor element.

6. A method for producing a semiconductor device, comprising the steps of:

(a) bonding a plurality of semiconductor elements onto a wiring substrate, the wiring substrate having a wiring pattern for external connection formed thereon, and each of the semiconductor elements having a surface with an electrode thereon;

(b) connecting the electrode on the surface of each of the semiconductor elements to the wiring pattern on the wiring substrate with a metal wire;

(c) placing, in a lower metallic mold for mold processing, the wiring substrate with the surfaces of the semiconductor elements facing upward;

(d) placing an upper metallic mold for mold processing on the wiring substrate placed in the lower metallic mold, the upper mold having a contact prevention protruding portion on an internal surface of the upper metallic mold;

(e) injecting mold resin into a space between the wiring substrate and the upper metallic mold sealing the semiconductor elements and the metal wires on the wiring substrate; and

(f) cutting the wiring substrate sealed by the mold resin into portions corresponding to the plurality of semiconductor elements to thereby form a plurality of semiconductor devices;

wherein the protruding portion on the internal surface of the upper metallic mold is formed at a boundary between the semiconductor elements, and a dimension of the protruding portion in a direction in which it protrudes is equal to a height of a space formed between the wiring substrate and the upper metallic mold.