Three-dimensional, mask-programmed read only memory
First Claim
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1. A 3-dimensional read only memory array comprising:
- a substrate;
a layer of first conductors overlying the substrate;
a first, mask-programmed, insulating layer overlying the layer of first conductors;
a layer of second conductors overlying the first insulating layer, said second conductors each positioned to cross over multiple ones of said first conductors;
a second, mask-programmed, insulating layer overlying the layer of second conductors; and
a layer of third conductors overlying the second insulating layer, said third conductors each positioned to cross over multiple ones of the second conductors;
a plurality of first memory cells, each extending across the first insulating layer and positioned at an intersection of a respective first conductor and a respective second conductor; and
a plurality of second memory cells, each extending across the second insulating layer and positioned at an intersection of a respective second conductor and a respective third conductor;
each of said memory cells comprising a respective first diode component and a respective second diode component.
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Abstract
A 3-dimensional read only memory includes vertically stacked layers of memory cells. Each of the memory cells includes a mask programmed insulating layer, a pair of diode components, and a pair of crossing-conductors. The conductors (other than those at the top and the bottom of the array) each connect to both overlying conductors via overlying memory cells and to underlying conductors via underlying memory cells.
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Citations
10 Claims
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1. A 3-dimensional read only memory array comprising:
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a substrate;
a layer of first conductors overlying the substrate;
a first, mask-programmed, insulating layer overlying the layer of first conductors;
a layer of second conductors overlying the first insulating layer, said second conductors each positioned to cross over multiple ones of said first conductors;
a second, mask-programmed, insulating layer overlying the layer of second conductors; and
a layer of third conductors overlying the second insulating layer, said third conductors each positioned to cross over multiple ones of the second conductors;
a plurality of first memory cells, each extending across the first insulating layer and positioned at an intersection of a respective first conductor and a respective second conductor; and
a plurality of second memory cells, each extending across the second insulating layer and positioned at an intersection of a respective second conductor and a respective third conductor;
each of said memory cells comprising a respective first diode component and a respective second diode component. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification