Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor

• US 6,625,367 B2
• Filed: 08/21/2001
• Issued: 09/23/2003
• Est. Priority Date: 08/21/2000
• Status: Expired due to Term

• Current Assignee: Qorvo US, Inc. (Qorvo, Inc.)
• Original Assignee: TriQuint Technology Holding Co (Qorvo, Inc.)
• Inventors: Lentz, Charles W., Coult, David G., Segner, Bryan P., Derkits, Gustav E. Jr.
• Primary Examiner(s): Zarroli, Michael C.
• Application Number:
  US09/934,098
• Publication Number:
  US 20020076187A1
• Time in Patent Office: 763 Days
• Field of Search: 385/131, 257/13, 257/79, 257/184, 257/460, 257/461
• US Class Current: 385/131
• CPC Class Codes: H01L 31/022408 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01S 5/0422 with n- and p-contacts on the same side of the active layer

Abstract

The present invention provides an optoelectronic device that includes an optical active layer formed over a substrate and an active region formed in the optical active layer. The optoelectronic device further includes a P-contact and an N-contact formed over a same side of the substrate and associated with the active region, the N-contact is located within a trench formed in the optical active layer and contacts the substrate within the trench.

Claims

1. An optoelectronic device, comprising

an optical active layer located over a substrate;

an active region located in the optical active layer; and

a P-contact and an N-contact associated with the active region and located over a same side of the substrate, wherein the N-contact is located within a trench formed in the optical active layer and contacts the substrate within the trench.

2. The optoelectronic device as recited in claim 1 wherein the N-contact is a first N-contact and further includes a second N-contact located over the same side.

3. The optoelectronic device as recited in claim 1 further including a first bonding pad contacting the P-contact and a second bonding pad contacting the N-contact, wherein the first and second bonding pads are located over the same side.

4. The optoelectronic device as recited in claim 3 wherein the first bonding pad and second bonding pad are substantially coplanar.

5. The optoelectronic device as recited in claim 1 further including a first conductive trace that connects the P-contact to a first bonding pad and a second conductive trace located at least partially within the trench that connects the N-contact to a second bonding pad, wherein the first and second bonding pads are located over the same side.

6. The optoelectronic device as recited in claim 1 further including an insulator layer located within the trench and partially over the optical layer.

11. The method as recited in claim 1 further including forming a first conductive trace that connects the P-contact to a first bonding pad and forming a second conductive trace located at least partially within the trench that connects the N-contact to a second bonding pad, wherein the first and second bonding pads are located over the same side.

7. A method of manufacturing an optoelectronic device, comprising:

placing an optical active layer over a substrate;

creating an active region in the optical active layer; and

forming a P-contact and an N-contact associated with the active region over a same side of the substrate, including the N-contact within a trench formed in the optical active layer and that contacts the substrate within the trench.

8. The method as recited in claim 7 wherein forming an N-contact includes forming a first N-contact and further includes forming a second N-contact over the same side.

9. The method as recited in claim 7 further including forming a first bonding pad contacting the P-contact and forming a second bonding pad contacting the N-contact, wherein the first and second bonding pads are located over the same side.

10. The method as recited in claim 9 wherein forming the first bonding pad and forming the second bonding pad includes forming the first bonding pad and forming the second bonding pad that are substantially coplanar.

12. The method as recited in claim 7 further including forming an insulator layer between the P-contact and the N-contact.

13. An optical fiber communications system, comprising:

a first optical device, which includes an optical active layer located over a substrate, an active region located in the optical active layer and a P-contact and an N-contact associated with the active region and located over a same side of the substrate, wherein the N-contact is located within a trench formed in the optical active layer and contacts the substrate within the trench; and

a second optical device coupled to the first optical device.

14. The optical fiber communications system as recited in claim 13 wherein the first optical device further includes a first bonding pad contacting the P-contact and a second bonding pad contacting the N-contact, wherein the first and second bonding pads are located over the same side.

15. The optical fiber communications system as recited in claim 14 wherein the first bonding pad and second bonding pad are substantially coplanar.

16. The optical fiber communications system recited in claim 13 wherein the first optical device is a laser or a photodetector.

17. The optical fiber communications system as recited in claim 13 further including devices selected from the group consisting of:

optical sub assemblies,

modulators,

optical amplifiers, and

optical waveguides.