Apparatus for manufacturing electron source, method for manufacturing electron source, and method for manufacturing image-forming apparatus
First Claim
1. A method for manufacturing an electron source comprising an electron-emitting element having a first electrode, a second electrode, and a carbon film disposed between the first electrode and the second electrode, the electron-emitting element being placed on a front surface of a substrate, the method comprising the steps of:
- covering a partial front surface or a entire front surface of the substrate provided with the first electrode and the second electrode by a container;
introducing a gas comprising a carbon compound into the container via a gas inlet of the container; and
forming the carbon film by applying a voltage between the first electrode and the second electrode, wherein a relationship 1/(4/Cx−
1/Cz)≧
Sout≧
4Sact−
Cin is satisfied, where Cin is the conductance from the gas inlet to the position of the substrate nearest to the gas inlet, Cx is a conductance from the position of the substrate nearest to the gas inlet to a position of the substrate nearest to a gas outlet for evacuating the container, Sout is an effective exhaust rate of an exhaust unit connected to the gas outlet, Sact is the consumption rate of a gas consumed by applying the voltage to the electron-emitting element, and Cz is a conductance from the substrate to the gas outlet.
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Accused Products
Abstract
A method for manufacturing an electron source includes the steps of covering a substrate provided with a first electrode and a second electrode by a container, introducing a gas composed of a carbon compound into the container, and forming a carbon film by applying a voltage between the first electrode and the second electrode. The relationship 1/(4/Cx−1/Cz)≧Sout≧4Sact−Cin is satisfied, where Cin is the conductance from the gas inlet to the position of the substrate nearest to the gas inlet, Cx is the conductance from the position of the substrate nearest to the gas inlet to the position of the substrate nearest to the gas outlet, Sout is the effective exhaust rate, Sact is the consumption rate of the gas, and Cz is the conductance from the substrate to the gas outlet. An apparatus for manufacturing an electron source and a method for manufacturing an image-forming apparatus are also disclosed.
63 Citations
15 Claims
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1. A method for manufacturing an electron source comprising an electron-emitting element having a first electrode, a second electrode, and a carbon film disposed between the first electrode and the second electrode, the electron-emitting element being placed on a front surface of a substrate, the method comprising the steps of:
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covering a partial front surface or a entire front surface of the substrate provided with the first electrode and the second electrode by a container;
introducing a gas comprising a carbon compound into the container via a gas inlet of the container; and
forming the carbon film by applying a voltage between the first electrode and the second electrode, wherein a relationship 1/(4/Cx−
1/Cz)≧
Sout≧
4Sact−
Cin is satisfied, where Cin is the conductance from the gas inlet to the position of the substrate nearest to the gas inlet, Cx is a conductance from the position of the substrate nearest to the gas inlet to a position of the substrate nearest to a gas outlet for evacuating the container, Sout is an effective exhaust rate of an exhaust unit connected to the gas outlet, Sact is the consumption rate of a gas consumed by applying the voltage to the electron-emitting element, and Cz is a conductance from the substrate to the gas outlet.- View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing an image-forming apparatus,
the image forming apparatus comprising: -
an electron source comprising an electron-emitting element having a first electrode, a second electrode, and a carbon film disposed between the first electrode and the second electrode, the electron-emitting element being placed on a front surface of a substrate; and
an image-forming member facing the electron source and forming an image by electrons emitted from the electron-emitting element, the method comprises the steps of;
covering a partial front surface or a entire front surface of the substrate provided with the first electrode and the second electrode by a container;
introducing a gas comprising a carbon compound into the container via a gas inlet of the container; and
forming the carbon film by applying a voltage between the first electrode and the second electrode, wherein a relationship 1/(4/Cx−
1/Cz)≧
Sout≧
4Sact−
Cin is satisfied, where Cin is a conductance from the gas inlet to a position of the substrate nearest to the gas inlet, Cx is an conductance from the position of the substrate nearest to the gas inlet to a position of the substrate nearest to a gas outlet for evacuating the container, Sout is an effective exhaust rate of an exhaust unit connected to the gas outlet, Sact is a consumption rate of the gas consumed by applying the voltage to the electron-emitting element, and Cz is a conductance from the substrate to the gas outlet.- View Dependent Claims (7, 8, 9, 10)
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11. An apparatus for manufacturing an electron source, the electron source comprising:
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an electron-emitting element having a first electrode, a second electrode and a carbon film disposed between the first electrode and the second electrode, the electron-emitting element being placed on a front surface of a substrate, the apparatus comprising;
a base for supporting the substrate preliminarily provided with the first electrode and the second electrode;
a container for covering the front surface of the substrate supported by the base; and
a voltage-applying unit, wherein, in the steps of covering a partial front surface or a entire front surface of the substrate provided with the first electrode and the second electrode by the container;
introducing a gas comprising a carbon compound into the container via a gas inlet of the container; and
forming the carbon film by applying a voltage between the first electrode and the second electrode using the voltage-applying unit, a relationship 1/(4/Cx−
1/Cz)≧
Sout≧
4Sact−
Cin is satisfied, where Cin is a conductance from the gas inlet to a position of the substrate nearest to the gas inlet, Cx is a conductance from the position of the substrate nearest to the gas inlet to a position of the substrate nearest to a gas outlet for evacuating the container, Sout is an effective exhaust rate of an exhaust unit connected to the gas outlet, Sact is a consumption rate of the gas consumed by applying the voltage to the electron-emitting element, and Cz is a conductance from the substrate to the gas outlet.- View Dependent Claims (12, 13, 14, 15)
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Specification