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Situ measurement of film nitridation using optical emission spectroscopy

  • US 6,627,463 B1
  • Filed: 10/19/2000
  • Issued: 09/30/2003
  • Est. Priority Date: 10/19/2000
  • Status: Expired due to Fees
First Claim
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1. A method for nitriding a silicon oxide film formed over a substrate disposed in a substrate processing chamber, said method comprising:

  • providing a substrate having an exposed silicon oxide film on an upper face thereof;

    flowing a gas comprising nitrogen into the chamber;

    forming a plasma from said gas and exposing said silicon oxide film to said plasma so as to nitridate said oxide film;

    measuring an optical emission of the plasma while said silicon oxide film is being nitridized by exposure to said plasma so as to obtain OES data; and

    using said OES data to monitor said nitriding process.

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