Situ measurement of film nitridation using optical emission spectroscopy

• US 6,627,463 B1
• Filed: 10/19/2000
• Issued: 09/30/2003
• Est. Priority Date: 10/19/2000
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Sarfaty, Moshe
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): LUK, OLIVIA T
• Application Number:
  US09/693,582
• Time in Patent Office: 1,076 Days
• Field of Search: 438/14-16, 438/240, 438/448, 438/714
• US Class Current: 438/7
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02332 into an oxide layer, e.g. changing SiO to SiON
• CPC Class Codes: H01L 21/0234 treatment by exposure to a plasma
• CPC Class Codes: H01L 21/3144 on silicon

Abstract

A method of nitriding a silicon oxide film according to the present invention includes flowing a nitrogen-containing gas into a substrate processing chamber and forming a plasma from the gas. Optical emissions from the plasma are then measured while a silicon oxide film deposited over a substrate disposed in the chamber is exposed to the plasma to obtain OES data that is used to optimize, monitor and/or stop the nitriding process.

Claims

1. A method for nitriding a silicon oxide film formed over a substrate disposed in a substrate processing chamber, said method comprising:

providing a substrate having an exposed silicon oxide film on an upper face thereof;

flowing a gas comprising nitrogen into the chamber;

forming a plasma from said gas and exposing said silicon oxide film to said plasma so as to nitridate said oxide film;

measuring an optical emission of the plasma while said silicon oxide film is being nitridized by exposure to said plasma so as to obtain OES data; and

using said OES data to monitor said nitriding process.

2. The method of claim 1 wherein said OES data is used to endpoint said nitriding process.

3. The method of claim 2 wherein using said OES data to endpoint said nitride process comprises comparing said OES data to OES data measured during a previous nitridation process.

4. The method of claim 2 wherein using said OES data to endpoint said nitride process comprises:

comparing the measured wavelengths with wavelengths measured during a previous substrate processing operation using a pattern recognition technique.

5. The method of claim 1 wherein said silicon oxide film is an undoped silicon glass film.

6. The method of claim 1 wherein said OES data is used to stop said nitriding process in response to a fault detection.

7. A method for nitriding a silicon oxide film formed over a substrate disposed in a substrate processing chamber, said method comprising:

flowing a gas comprising nitrogen into the chamber;

forming a plasma from said gas and exposing said silicon oxide film to said plasma;

measuring an optical emission of the plasma while said silicon oxide film is exposed to said plasma to obtain OES data;

normalizing said OES data to previously measured OES data; and

using said normalized OES data to endpoint said nitriding process.

8. The method of claim 7 wherein using said normalized OES data to endpoint said nitride process comprises comparing said normalized OES data to normalized OES data measured during one or more previous nitridation processes.

9. The method of claim 8 wherein said OES data from said one or more previous nitridation processes has been correlated to atomic percent nitridation.

10. The method of claim 7 wherein said silicon oxide film is an undoped silicon glass film.

11. A method of fabricating an integrated circuit on a silicon substrate having an upper surface, said method comprising:

forming source and drain regions under said upper surface;

forming a gate oxide over said upper surface;

nitriding said gate oxide by exposing said gate oxide to a nitrogen-containing plasma, wherein said nitriding is endpointed in response to a detection of optical emissions from said plasma.

12. The method of claim 11 further comprising, after said nitriding step, forming a gate over said gate oxide.

13. The method of claim 12 wherein said gate oxide is less than or equal to 30 Å

thick.

14. The method of claim 13 wherein said nitriding is endpointed by comparing OES data measured from said plasma to OES data measured during a previous nitridation process.

15. The method of claim 13 wherein said nitriding is endpointed by comparing said optical emissions with optical emissions measured during a previous nitridation process using a pattern recognition technique.