Method for making three-dimensional device

• US 6,627,518 B1
• Filed: 10/18/1999
• Issued: 09/30/2003
• Est. Priority Date: 02/27/1998
• Status: Active Grant

• Current Assignee: 138 East LCD Advancements Limited (Vector Capital Corporation)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Inoue, Satoshi, Shimoda, Tatsuya
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Simkovic, Viktor
• Application Number:
  US09/403,342
• Time in Patent Office: 1,443 Days
• Field of Search: 438/149, 438/150, 438/151, 438/152, 438/161, 438/455, 438/458, 438/515, 156/344, 156/584, 294/264, 294/265, 297/62
• US Class Current: 438/458
• CPC Class Codes: H01L 21/00 Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
• CPC Class Codes: H01L 2221/68359 used as a support during manufacture of interconnect decals or build up layers
• CPC Class Codes: H01L 2221/68368 used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 27/00 Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate details thereof H01L23/00, H01L29/00 - H10K10/00; assemblies consisting of a plurality of individual solid state devices H01L25/00
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

A method for making a three-dimensional device is disclosed. The method includes a step of forming a first cleaving layer, a first intermediate layer, and a first transferred layer on a first translucent substrate and forming a second cleaving layer, a second intermediate layer, and a second transferred layer on a second translucent substrate. The method further includes a step for bonding of the first transferred layer to a transferring-side substrate on the side away from the first translucent substrate, with a first adhesive layer provided therebetween; a step for irradiating the first cleaving layer with illuminating light so as to form intralayer and/or interfacial cleavage in the first cleaving layer by ablation and then detaching the first transferred layer from the first translucent substrate to transfer the first transferred layer onto the transferring-side substrate; a step for bonding of the second transferred layer to the first transferred layer on the side away from the translucent substrate with a conductive adhesive layer provided therebetween; and a step for irradiating the second cleaving layer with the illuminating light as above, and then detaching the second transferred layer from the second translucent substrate to transfer the second transferred layer onto the first transferred layer.

Claims

1. A method for making a device having a plurality of layers, comprising:

forming a cleaving layer over a first substrate;

forming at least one layer over the cleaving layer, the at least one layer having a predetermined pattern; and

transferring partly the at least one layer to a second substrate by a step including irradiating the cleaving layer with a light having the predetermined pattern.

3. The method for making a device according to claim 1, the cleaving layer including any one of amorphous silicon, ceramic, metal and an organic material.

4. The method for making a device according to claim 1, the cleavage of the cleaving layer being generated by one of breakage and attenuation of atomic bonding force or molecular bonding force of substances comprising the cleaving layer.

5. The method for making a device according to claim 1, the cleavage of the cleaving layer being generated by gas evolved from substances comprising the cleaving layer.

6. The method for making a device according to claim 1, wherein laser light is used for-light-irradiation.

7. The method for making a device according to claim 6, the laser light having a wavelength of 100 to 350 nm.

8. The method for making a device according to claim 6, the laser light having a wavelength of 350 to 1,200 nm.

9. The method for making a device according to claim 1, the first substrate being an optically transparent substrate.

24. The method for making a device according to claim 1, the at least one layer including a memory device.

25. The method for making a device according to claim 1, the at least one device layer including a logic device.

2. A method for making a device having a plurality of layers, comprising:

forming a cleaving layer over a first substrate;

forming at least one layer over the cleaving layer, the at least one layer having a predetermined pattern; and

transferring partly the at least one layer to a second substrate by a step including forming a cleavage of the cleaving layer so that the cleavage has the predetermined pattern, the at least one layer having a pattern corresponding to the predetermined pattern when the at least one layer is disposed over the second substrate.

10. The method for making a device according to claim 2, the plurality of layers further comprising electrodes that electrically connect two adjacent layers.

11. The method for making a device according to claim 10, the electrodes being disposed on two surfaces of each layer.

12. The method for making a device according to claim 10, further comprising bonding the two adjacent layers to each other with an anisotropic conductive film therebetween.

13. The method for making a device according to claim 2, in two selected layers of the layers, a first of the two selected layers comprising a light emitting section and a second of the two selected layers comprising a light receiving section that receives light from the light emitting section, and the light emitting section and the light receiving section enabling optical communication between the two selected layers.

14. The method for making a device according to claim 2, the at least one layer being simultaneously produced with at least one layer of the plurality of layers.

16. The method for making a device according to claim 2, the at least one layer including a memory device.

17. The method for making a device according to claim 2, the at least one layer including a logic device.

22. The method for making a device according to claim 2, the cleaving layer comprising at least one of amorphous silicon, ceramic, metal and an organic polymer.

23. The method for making a device according to claim 2, the plurality of layers including a layer having a light emitting section.

15. A method for making a device having a plurality of layers, comprising:

forming a cleaving layer over a first substrate;

forming at least one layer over the cleaving layer, the at least one layer including a plurality of transistors, the at least one layer having a predetermined pattern; and

transferring partly the at least one layer to a second substrate by a step including forming a cleavage of the cleaving layer so that the cleavage has the predetermined pattern, the at least one layer having a pattern corresponding to the predetermined pattern when the at least one layer is disposed above the second substrate.

18. A method for making an LSI, comprising:

forming a cleaving layer over a first substrate;

forming at least two layers over the cleaving layer, the at least two layers including a memory device and a logic device, respectively, the at least two layer having a predetermined pattern; and

transferring partly the at least two layers to a second substrate by a step including forming a cleavage of the cleaving layer so that the cleavage has the predetermined pattern, the at least two layers having a pattern corresponding to the predetermined pattern when the at least two layers are disposed over the second substrate.

19. The method for making a device according to claim 18, the logic device and the memory device being formed by different design rules.

20. The method for making a device according to claim 18, the logic and the memory being formed by different design parameters.

21. The method for making a device according to claim 18, the logic and the memory being formed by different production processes.

26. A method for making a device having a plurality of layers including at least one device layer where a device is disposed, comprising:

forming a cleaving layer over a first substrate;

forming at least one layer over the cleaving layer, the at least one layer having a predetermined pattern; and

transferring partly the at least one layer to the second substrate so that the at least one layer has the predetermined pattern when the at least one layer is disposed over the second substrate.

27. A method for making a device having a plurality of layers, comprising:

forming a cleaving layer having a predetermined pattern on a first substrate;

forming at least one layer on the cleaving layer, the at least one layer having the predetermined pattern; and

transferring the at least one layer to a second substrate by a step including forming a cleavage of the cleaving layer so that the at least one layer has a pattern corresponding to the predetermined pattern when the at least one layer is disposed over the second substrate.

28. A method for making a device having a plurality of layers, comprising:

forming a cleaving layer on a first substrate;

forming at least one layer on the cleaving layer, the at least one layer having a predetermined pattern; and

transferring partly the at least one layer to a second substrate by a step including irradiating the cleaving layer with a light through a mask having the predetermined pattern.

29. A method for making a device having a plurality of layers, comprising:

forming a cleaving layer over a first substrate;

forming at least one layer over the cleaving layer;

etching the cleaving layer to have a predetermined pattern; and

transferring the at least one layer to a second substrate, the at least one layer having a pattern corresponding to the predetermined pattern when the at least one layer is deposited over the second substrate.