Method of manufacturing semiconductor device
First Claim
1. A method of manufacturing a semiconductor device comprising;
- a step of supplying octa-methylcyclotetrasiloxane into a vacuum processing chamber of a vacuum ultraviolet CVD apparatus in which an object on which an interlayer insulating film is to be formed is arranged; and
a step of irradiating vacuum ultraviolet light from a vacuum ultraviolet light source arranged on an upper part of the vacuum processing chamber onto the object placed in the vacuum processing chamber to grow the interlayer insulating film.
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Accused Products
Abstract
A method of manufacturing an interlayer insulating film that can form an insulating layer having excellent planarization property without using an etch-back process is offered. A method of manufacturing a semiconductor device having a step of forming an interlayer insulating film on an object comprises a step of supplying octa-methylcyclotetrasiloxane as a source gas into a vacuum processing chamber of a vacuum ultraviolet CVD apparatus in which an object on which an interlayer insulating film is to be formed is arranged; and a step of irradiating vacuum ultraviolet light from a vacuum ultraviolet light source arranged on an upper part of the vacuum processing chamber onto the object placed in the vacuum processing chamber to grow an interlayer insulating film.
18 Citations
19 Claims
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1. A method of manufacturing a semiconductor device comprising;
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a step of supplying octa-methylcyclotetrasiloxane into a vacuum processing chamber of a vacuum ultraviolet CVD apparatus in which an object on which an interlayer insulating film is to be formed is arranged; and
a step of irradiating vacuum ultraviolet light from a vacuum ultraviolet light source arranged on an upper part of the vacuum processing chamber onto the object placed in the vacuum processing chamber to grow the interlayer insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method of manufacturing a semiconductor device comprising:
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a step of supplying octa-methylcyclotetrasiloxane and an inert gas into a vacuum processing chamber of a vacuum ultraviolet CVD apparatus in which an object on which an interlayer insulating film is to be formed is arranged; and
a step of irradiating vacuum ultraviolet light from a vacuum ultraviolet light source arranged on an upper part of the vacuum processing chamber onto the object placed in the vacuum processing chamber to grow the interlayer insulating film. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification