Apparatus and method for distribution of dopant gases or vapors in an arc chamber for use in an ionization source

• US 6,627,901 B2
• Filed: 01/04/2001
• Issued: 09/30/2003
• Est. Priority Date: 01/04/2001
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics America Inc.(f/k/a Integrated Device Technology, Inc) (Renesas Electronics Corporation)
• Original Assignee: NEC Electronics Incorporated (NEC Corporation)
• Inventors: Martinez, Christopher D.
• Primary Examiner(s): ANDERSON, BRUCE C
• Application Number:
  US09/754,442
• Publication Number:
  US 20020084258A1
• Time in Patent Office: 999 Days
• Field of Search: 250/423.R, 250/427
• US Class Current: 250/427
• CPC Class Codes: H01J 2237/31701 Ion implantation
• CPC Class Codes: H01J 37/08 Ion sources; Ion guns

Abstract

An apparatus and method for distributing dopant gas or vapor in an arc chamber of ion source used as part of an ion implanter. The apparatus includes a plenum, a sub-plenum, and a baffle to distribute the dopant gas or vapor through out the arc chamber. The method allows dopant gas and vapors to be distributed in such a way as to cause efficient reaction of dopant gas or vapor molecules with electrons created by a filament contained in the arc chamber. The reaction of dopant gas or vapor molecules with the electrons in turn produces positively charged ions by the ion implanter.

Claims

1. An apparatus for use in an ion implant machine, the apparatus comprising:

an arc chamber;

a plenum;

a first plenum wall;

a sub-plenum, and;

a baffle comprising a plurality of apertures through which fluid may flow between the sub-plenum and the arc chamber;

wherein fluid may flow between the plenum and the sub-plenum through an aperture formed in the first plenum wall positioned between the plenum and the sub-plenum.

2. The apparatus of claim 1 wherein the sub-plenum is defined by the baffle and the first plenum wall.

3. The apparatus of claim 1 further comprising a second plenum wall, wherein fluid may flow into the plenum through an aperture formed in the second plenum wall.

4. The apparatus of claim 1 wherein fluid may flow into the sub-plenum only through the aperture formed in the first plenum wall.

5. The apparatus of claim 1 wherein each of the apertures of the baffle is out of alignment with the aperture formed in the first plenum wall.

6. The apparatus of claim 1 wherein each of the apertures of the baffle has a diameter ranging from 0.010 to 0.100 inches.

7. The apparatus of claim 1 it further comprising:

first and second arc chamber walls;

a filament mounted to the first arc chamber wall;

a repeller plate mounted to the second arc chamber wall;

wherein the baffle is positioned such that fluid passing through baffle apertures into the arc chamber, passes between the filament and repeller plate.

8. A method of distributing gas or vapor in an arc chamber used in an ion implanter, the method comprising:

(a) the arch chamber receiving gas or vapor from a sub-plenum via a plurality of apertures formed in a baffle;

(b) the sub-plenum receiving gas or vapor from a plenum via an aperture formed in an aperture of a first plenum wall, wherein the baffle and first plenum wall define the sub-plenum;

(c) the plenum receiving gas or vapor from an aperture formed in a second plenum wall.

9. The method of claim 8 wherein gas or vapor may flow into the sub-plenum only through the aperture formed in the first plenum wall.

10. The method of claim 8 wherein each of the apertures of the baffle is out of alignment with the aperture formed in the first plenum wall.

11. The method of claim 8 wherein each of the apertures of the baffle has a diameter ranging from 0.010 to 0.100 inches.

12. The method of claim 8 further comprising gas or vapor passing through the baffle apertures, flows between a filament and repeller plate mounted to first and second arc chamber walls, respectively.