Photoluminescent semiconductor materials

• US 6,630,356 B1
• Filed: 07/09/1999
• Issued: 10/07/2003
• Est. Priority Date: 07/10/1998
• Status: Expired due to Fees

• Current Assignee: Iatroquest Corporation, Latroquest Corporation
• Original Assignee: Iatroquest Corporation
• Inventors: Armstrong, David W., Lafrance, Martine L.
• Primary Examiner(s): Warden, Jill
• Assistant Examiner(s): Cole, Monique T.
• Application Number:
  US09/350,513
• Time in Patent Office: 1,551 Days
• Field of Search: 436/172, 436/72, 422/82.05, 422/82.08, 422/82.09, 204/403, 257/1, 205/118, 205/122, 205/123, 205/792, 205/793
• US Class Current: 436/172
• CPC Class Codes: G01N 21/6489 Photoluminescence of semiconductors
• CPC Class Codes: G01N 33/54373 involving physiochemical end-point determination, e.g. wave-guides, FETS, gratings
• CPC Class Codes: G01N 33/551 the carrier being inorganic
• CPC Class Codes: G01N 33/582 with fluorescent label
• CPC Class Codes: H01L 33/346 containing porous silicon

Abstract

Semiconductor materials having a porous texture are modified with a recognition element and produce a photoluminescent response on exposure to electromagnetic radiation. The recognition elements, which can be selected from biomolecular, organic and inorganic moieties, interact with a target analyte to produce a modulated photoluminescent response, as compared with that of semiconductor materials modified with a recognition element only.

Claims

1. A sensor composition for detecting a target analyte comprising:

at least one porous semiconductor material modified with at least one recognition element,

wherein the pore structure of said porous semiconductor material is substantially free of retaining pores, and

wherein when said composition is irradiated with at least one wavelength of electromagnetic radiation in the range of from about 100 nm to about 1000 nm, said composition produces at least one first luminescent response in the range of from about 200 nm to about 800 nm.

3. The composition according to claim 1, wherein the surface of said semiconductor material comprises mixtures of depressions or protrusions selected from the group consisting of circular, semi-circular, ellipsoidal, semi-ellipsoidal, polygonal, square, rectangular, triangular, rhomboidal, trapezial, trapezoidal, cylindrical, conical, cubical, parallelepipedal, polyhedral, rhombohedral, ellipsoidal, helical, spherical, ovoidal, pyramidal shapes, and combinations thereof.

9. The composition according to any of claims 1-6, 7 or 8, wherein said recognition element is selected from the group consisting of proteins, nucleic acids, oligonucleotides, lectins, carbohydrates, glycoproteins, lipids and combinations thereof.

10. The composition according to claim 9, further comprising a target analyte bound to said recognition element.

11. The composition according to claim 10, wherein said target analyte is selected from the group consisting of antigens, enzyme substrates, nerve agents, pesticides, insecticides, nucleic acids, receptor ligands and lectins.

12. The composition according to any of claims 1-6, 7 or 8, wherein said recognition element is covalently bonded to said semiconductor material.

13. The composition according to claim 12, wherein said recognition element is bound to said semiconductor material via at least one primary linker.

14. The composition according to claim 13, further comprising a linker treatment composition.

15. The composition according to claim 14, wherein said linker treatment composition is selected from the group consisting of immunoglobulin binding proteins, biotin reactive agents, blocking solutions and combinations thereof.

16. The composition according to any of claims 1-6, 7 or 8, wherein said semiconductor material is selected from the group consisting of silicon, silicon carbide, silicon dioxide, germanium, gallium, gallium arsenide, silicon gallium phosphide, cadmium, selenium, copper oxide and combinations thereof.

17. The composition according to any of claims 1-6, 7 or 8, further comprising a dopant for said semiconductor material.

18. The composition according to claim 17, wherein said dopant is selected from the group consisting of erbium, boron, phosphorous, copper, phosphors from the lanthanides series and combinations thereof.

19. The composition according to any of claims 1-6 or 7, wherein said semiconductor material further comprises a core material as a support for said semiconductor material.

21. The composition according to claim 19, wherein said core material is selected from the group consisting of glass, plastic, ceramics, zeolites, metals and combinations thereof.

2. A sensor composition for detecting a target analyte comprising:

at least one porous semiconductor material modified with at least one recognition element,

wherein said porous semiconductor material has a surface area of up to about 11 times the surface area of a corresponding non-porous semiconductor material, and

wherein when said composition is irradiated with at least one wavelength of electromagnetic radiation in the range of from about 100 nm to about 1000 nm, said composition produces at least one first luminescent response in the range of from about 200 nm to about 800 nm.

4. A sensor composition for detecting a target analyte comprising:

at least one semiconductor material modified with at least one recognition element,

wherein the surface of said semiconductor material comprises substantially irregular structural features,

wherein when said composition is irradiated with at least one wavelength of electromagnetic radiation in the range of from about 100 nm to about 1000 nm, said composition produces at least one first luminescent response in the range of from about 200 nm to about 800 nm.

5. A sensor composition for detecting a target analyte comprising:

at least one porous semiconductor material modified with at least one recognition element,

wherein the pores of said porous semiconductor material are distributed in a substantially irregular fashion, and

wherein when said composition is irradiated with at least one wavelength of electromagnetic radiation in the range of from about 100 nm to about 1000 nm, said composition produces at least one first luminescent response in the range of from about 200 nm to about 800 nm.

6. A sensor composition for detecting a target analyte comprising:

at least one porous semiconductor material modified with at least one recognition element,

wherein said porous semiconductor material has a three dimensional shape that is not a film or a wafer, and

wherein when said composition is irradiated with at least one wavelength of electromagnetic radiation in the range of from about 100 nm to about 1000 nm, said composition produces at least one first luminescent response in the range of from about 200 nm to about 800 nm.

33. The composition according to claim 6, wherein said at least one porous semiconductor material comprises silicon.

34. The composition according to claim 6, wherein said at least one porous semiconductor material has a diameter in the range of at least about 100 nm.

7. A sensor composition for detecting a target analyte comprising:

at least one porous semiconductor material modified with at least one recognition element,

wherein said porous semiconductor material has a particulate structure, and

wherein when said composition is irradiated with at least one wavelength of electromagnetic radiation in the range of from about 100 nm to about 1000 nm, said composition produces at least one first luminescent response in the range of from about 200 nm to about 800 nm.

8. A sensor composition for detecting a target analyte comprising:

a core material having a coating of at least one layer of a porous semiconductor material modified with at least one recognition element,

wherein said porous semiconductor material has a particulate structure, and

wherein when said composition is irradiated with at least one wavelength of electromagnetic radiation in the range of from about 100 nm to about 1000 nm, said composition produces at least one first luminescent response in the range of from about 200 nm to about 800 nm.

20. The composition according to claim 8, wherein said core material is selected from the group consisting of glass, plastic, ceramics, zeolites, metals and combinations thereof.

22. A sensor composition comprising:

at least one porous semiconductor material modified with at least one recognition element, and an organism bound to said recognition element,

wherein when said composition is irradiated with at least one wavelength of electromagnetic radiation in the range of from about 100 nm to about 1000 nm, said composition produces at least one first luminescent response in the range of from about 200 nm to about 800 nm.

23. The composition according to claim 22, wherein said recognition element is selected from the group consisting of proteins, lectins, carbohydrates, glycoproteins, and combinations thereof.

24. The composition according to claim 22, wherein said recognition element is covalently bonded to said semiconductor material.

25. The composition according to claim 24, wherein said recognition element is bound to said semiconductor material via at least one primary linker.

26. The composition according to claim 25, further comprising a linker treatment composition.

27. The composition according to claim 26, wherein said linker treatment composition is selected from the group consisting of immunoglobulin binding proteins, biotin reactive agents, blocking solutions and combinations thereof.

28. The composition according to claim 22, wherein said semiconductor material is selected from the group consisting of silicon, silicon carbide, silicon dioxide, germanium, gallium, gallium arsenide, silicon gallium phosphide, cadmium, selenium, copper oxide and combinations thereof.

29. The composition according to claim 22, further comprising a dopant for said semiconductor material.

30. The composition according to claim 29, wherein said dopant is selected from the group consisting of erbium, boron, phosphorous, copper, phosphors from the lanthanides series and combinations thereof.

31. The composition according to claim 22, wherein said semiconductor material further comprises a core material as a support for said semiconductor material.

32. The composition according to claim 31, wherein said core material is selected from the group consisting of glass, plastic, ceramics, zeolites, metals and combinations thereof.