High-voltage semiconductor component
DCFirst Claim
1. Semiconductor component having a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode, the side of the zone of the second conductivity type facing the drain zone forming a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, areas of the first and second conductivity type nested in one another, wherein the areas of the first and second conductivity type are variably so doped that near the first surface doping atoms in the area of the second conductivity type predominate over those in the area of the first conductivity type, and near the second surface doping atoms in the area of the first conductivity type predominate over those in the area of the second conductivity type.
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Abstract
The invention relates to a high-voltage semiconductor component comprising semiconductor areas (4, 5) of alternating, different conductivity types which are arranged in a semiconductor body in an alternating manner. In the semiconductor body said semiconductor areas extend from at least one first zone (6) to near a second zone (1) and are variably doped so that the electric field increases progressively from one zone to the other (6, 1)
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Citations
11 Claims
- 1. Semiconductor component having a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode, the side of the zone of the second conductivity type facing the drain zone forming a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, areas of the first and second conductivity type nested in one another, wherein the areas of the first and second conductivity type are variably so doped that near the first surface doping atoms in the area of the second conductivity type predominate over those in the area of the first conductivity type, and near the second surface doping atoms in the area of the first conductivity type predominate over those in the area of the second conductivity type.
Specification