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Low temperature silicon wafer bond process with bulk material bond strength

  • US 6,630,713 B2
  • Filed: 02/25/1999
  • Issued: 10/07/2003
  • Est. Priority Date: 11/10/1998
  • Status: Expired due to Term
First Claim
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1. A semiconductor device comprising:

  • a first semiconductor wafer and a second semiconductor wafer, each having an annular edge, the second wafer laser treated and bonded annealed to the first semiconductor wafer forming Si—

    Si bonding, wherein the bond is substantially free of hydrogen or defects; and

    an integrated circuit element that is adjacent to wafer surface, positioned on or within the annular edge of one of the semiconductor wafers and the Si—

    Si bond the integrated circuit element comprising one or more of aluminum, copper, polysilicon and gold.

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