Low temperature silicon wafer bond process with bulk material bond strength
First Claim
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1. A semiconductor device comprising:
- a first semiconductor wafer and a second semiconductor wafer, each having an annular edge, the second wafer laser treated and bonded annealed to the first semiconductor wafer forming Si—
Si bonding, wherein the bond is substantially free of hydrogen or defects; and
an integrated circuit element that is adjacent to wafer surface, positioned on or within the annular edge of one of the semiconductor wafers and the Si—
Si bond the integrated circuit element comprising one or more of aluminum, copper, polysilicon and gold.
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Abstract
The present invention includes a method for bonding one semiconductor surface to a second semiconductor surface. The method includes providing a first article that has a semiconductor surface and a second article that has a semiconductor surface. The semiconductor surfaces are annealed with an energy source wherein energy is confined to the semiconductor surfaces. The annealed surfaces are bonded to each other.
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Citations
26 Claims
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1. A semiconductor device comprising:
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a first semiconductor wafer and a second semiconductor wafer, each having an annular edge, the second wafer laser treated and bonded annealed to the first semiconductor wafer forming Si—
Si bonding, wherein the bond is substantially free of hydrogen or defects; and
an integrated circuit element that is adjacent to wafer surface, positioned on or within the annular edge of one of the semiconductor wafers and the Si—
Si bond the integrated circuit element comprising one or more of aluminum, copper, polysilicon and gold.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device comprising:
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a first silicon wafer and a second silicon wafer laser bonded by Si—
Si bonds to the first silicon wafer; and
a circuit element positioned on or within the second silicon wafer and the Si—
Si bond that comprises one or more of aluminum, copper, polysilicon, and gold wherein the aluminum, copper, polysilicon and gold are free of any laser bonding temperature changes and wherein the circuit element is adjacent to silicon.- View Dependent Claims (15)
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16. A semiconductor article comprising a p-type silicon wafer and an n-type silicon wafer wherein the p-type silicon wafer is laser bonded by Si—
- Si bonds to the n-type silicon wafer and is substantially free of hydrogen or defects.
- View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
Specification