Laser programming of integrated circuits

• US 6,630,723 B2
• Filed: 06/25/2002
• Issued: 10/07/2003
• Est. Priority Date: 06/26/2001
• Status: Expired due to Fees

• Current Assignee: Qimonda AG (Infineon Technologies AG)
• Original Assignee: Infineon Technologies AG
• Inventors: Hedler, Harry, Irsigler, Roland
• Primary Examiner(s): JACKSON JR, JEROME
• Application Number:
  US10/179,751
• Publication Number:
  US 20030006479A1
• Time in Patent Office: 469 Days
• Field of Search: 257/529, 257/530, 257/762, 438/4, 438/132
• US Class Current: 257/529
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 23/5258 the change of state resulting from the use of an external beam, e.g. laser beam or ion beam

Abstract

Laser Programming of Integrated Circuits. The invention relates to the laser adjustment or laser programming of laser fuses of an integrated circuit on a chip, with laser light, the integrated circuit having a plurality of laser fuses and being connected to a plurality of contact pads on the chip, and the chip being covered with a polymer layer which has at least windows on the plurality of contact pads, and comprising at least one wiring interconnect on the polymer layer which is electrically connected to at least one of the plurality of contact pads and ends at a predetermined location on a surface of the chip. To make it possible for integrated circuits to be programmed with laser light as late as possible in the production process, according to the invention the chip is irradiated in a predetermined region with intensive laser light, so that in the wiring interconnect there is created an interconnect opening, in the polymer layer lying thereunder there is created a layer opening and at least one of the plurality of laser fuses is interrupted in the predetermined region.

Claims

1. A method of programming an integrated circuit on a chip, with laser light, the integrated circuit having a plurality of laser fuses and being connected to a plurality of contact pads on the chip, and the chip being covered with a polymer layer which has at least windows on the plurality of contact pads, and comprising at least one wiring interconnect on the polymer layer which is electrically connected to at least one of the plurality of contact pads and ends at a predetermined location on a surface of the chip, wherein the chip is irradiated in a predetermined region with intensive laser light, so that in the wiring interconnect there is created an interconnect opening, in the polymer layer lying thereunder there is created a layer opening and at least one of the plurality of laser fuses is interrupted in the predetermined region.

2. The method as claimed in claim 1, wherein the wiring interconnect has a reduced interconnect thickness over the plurality of laser fuses.

3. The method as claimed in claim 1, wherein the creation of at least one wiring interconnect on the polymer layer comprises the steps of:

(a) creating a seed layer on the polymer layer;

(b) photolithographically structuring the seed layer, a photoresist bridge remaining on the seed layer over the laser fuses;

(c) creating a galvanic reinforcing layer on the structured seed layer; and

(d) removing the photoresist bridge.

4. The method as claimed in claim 1, wherein the openings created by the laser light in the wiring interconnect and the polymer layer covered by a printed polymer layer.

5. An integrated circuit on a chip which has a plurality of laser fuses and is connected to a plurality of contact pads on the chip, the chip being covered with a polymer layer which has at least windows on the plurality of contact pads, and comprising at least one wiring interconnect on the polymer layer which is electrically connected to at least one of the plurality of contact pads and ends at a predetermined location on a surface of the chip, wherein the at least one wiring interconnect has a reduced interconnect thickness over at least one fuse.

6. The integrated circuit as claimed in claim 5, wherein the at least one wiring interconnect comprises:

a seed layer on the polymer layer and a galvanic reinforcing layer, which extends over the seed layer with the exception of over the laser fuses.