Composite magnetic sensor

• US 6,630,882 B1
• Filed: 07/21/2000
• Issued: 10/07/2003
• Est. Priority Date: 08/05/1999
• Status: Expired due to Fees

• Current Assignee: Delphi Technologies, Inc. (BorgWarner Incorporated)
• Original Assignee: Delphi Technologies, Inc. (BorgWarner Incorporated)
• Inventors: Heremans, Joseph Pierre, Schroeder, Thaddeus, Partin, Dale Lee
• Primary Examiner(s): Loke, Steven
• Assistant Examiner(s): Gebremariam, Samuel A
• Application Number:
  US09/621,065
• Time in Patent Office: 1,173 Days
• Field of Search: 257/425, 257/536, 438/48, 324/207.21, 324/251, 324/252, 338/32.H, 338/32.R
• US Class Current: 338/32.00H
• CPC Class Codes: G01R 33/06 using galvano-magnetic devices

Abstract

Composite galvanomagnetic devices having a desired combination of properties in specific temperature ranges and magnetic field ranges and so combined that desired properties are provided over an extended temperature and magnetic field range. In practice this can be accomplished with a single die with layers of different properties. Particularly, the present invention addresses this method as related to magnetoresitors and Hall plates.

Claims

1. A composite magnetic sensor comprising:

a galvanomagnetic device formed of a plurality of layers;

wherein each layer is a respectively selected semiconductor material having a respective mobility peak at a respective temperature, wherein the respective temperatures of the mobility peaks are selected so as to be mutually spaced apart over a predetermined range of temperature;

wherein said layers cumulatively provide magnetic sensitivity which is substantially insensitive to changes in temperature over said predetermined range of temperature; and

wherein each layer has a thickness of at least ten nanometers;

wherein said galvanomagnetic device comprises a single magnetoresistive die comprising a first layer and at least one additional layer;

wherein each layer is comprised of at least one of indium antimonide and an alloy of indium antimonide, said alloy being selected from the group consisting of a selected mole fraction of indium replaced by gallium represented by In<sub>1−

x</sub>Ga_xSb where 0<

x<

1, and of a selected mole fraction of antimony replaced by at least one of phosphorous represented by InSb<sub>1−

y</sub>P_y where 0<

y<

1, and arsenic represented by InSb<sub>1−

z</sub>As_z where 0<

z<

1, each layer having a respectively predetermined doping level and respectively predetermined energy gap which thereby provide the respective mobility thereof;

wherein said layers comprise a first layer, a second layer and a third layer, said first second and third layers having a total thickness, wherein the first layer comprises substantially 16% of the total thickness and is doped n type to substantially 1.2×

10¹⁷ cm<sup>−

3</sup>, the second layer comprises substantially 20% of the total thickness and is doped p type to substantially 0.3×

10¹⁷ cm<sup>−

3</sup>, and the third layer comprises substantially 64% of the total thickness and is doped p type to substantially 0.5×

10¹⁷ cm<sup>−

3</sup>.

2. The composite magnetic sensor of claim 1, further comprising:

a substrate of GaAs upon which is formed said plurality of layers; and

a plurality of metallic shorting bars in contact with at least one layer of said magnetoresistive die.

3. A composite magnetic sensor comprising:

a galvanomagnetic device formed of a plurality of layers;

wherein each layer is a respectively selected semiconductor material having a respective mobility peak at a respective temperature, wherein the respective temperatures of the mobility peaks are selected so as to be mutually spaced apart over a predetermined range of temperature;

wherein said layers cumulatively provide magnetic sensitivity which is substantially insensitive to changes in temperature over said predetermined range of temperature; and

wherein each layer has a thickness of at least ten nanometers;

wherein said galvanomagnetic device comprises a single magnetoresistive die comprising a first layer and at least one additional layer;

wherein each layer is comprised of at least one indium antimonide and an alloy of indium antimonide, said alloy being selected from the group consisting of a selected mole fraction of indium replaced by gallium represented by In<sub>1−

x</sub>Ga_xSb where 0<

x<

1, and of a selected mole fraction of antimony replaced by at least one of phosphorous represented by InSb<sub>1−

v</sub>P_y where 0<

y<

1, and arsenic represented by InSb<sub>1−

x</sub>where 0<

z<

1, each layer having a respectively predetermined doping level and respectively predetermined energy gap which thereby provide the respective mobility peak thereof;

wherein said layers comprise a first layer, a second layer and a third layer, said first, second and third layers having a total thickness, wherein the first comprises substantially 16% of the total thickness and is doped n type with at least one element selected from the group consisting of Te, Se, S and Si to substantially 1.2×

10¹⁷ cm<sup>−

3</sup>, wherein the second layer comprises substantially 20% of the total thickness and is doped p type with at least one element selected from the group consisting of Be, C, Mn, Mg, Sr, Cd and Zn to substantially 0.3×

10¹⁷ cm<sup>−

3</sup>, and the third layer comprises substantially 64% of the total thickness and is doped p type with at least one element one element selected from the group consisting of Be, C, Mn, Ca, Sr, Cd and Zn to substantially 0.5×

10¹⁷ cm<sup>−

3</sup>.

4. The composite magnetic sensor of claim 3, further comprising:

a substrate of GaAs upon which is formed said three layers; and

a plurality of metallic shorting bars in contact with at least one layer of said magnetoresistive die.

5. A composite magnetic sensor comprising:

a galvanomagnetic device formed of a plurality of layers;

wherein each layer is a respectively selected semiconductor material having a respective mobility peak at a respective temperature, wherein the respective temperatures of the mobility peaks are selected so as to be mutually spaced apart over a predetermined range of temperature;

wherein said layers cumulatively provide magnetic sensitivity which is substantially insensitive to changes in temperature over said predetermined range of temperature; and

wherein each layer has a thickness of at least ten nanometers;

wherein said galvanomagnetic device is a Hall plate comprising a plurality of layers having a total thickness, and total thickness being substantially between 0.5 microns and 2 microns, and having an aspect ratio of substantially between 10;

1 and 1;

1;

wherein each layer is comprised of at least one of indium antimonide and an alloy of indium antimonide, said alloy being selected from the group consisting of a selected mole fraction of indium replaced by gallium represented by In<sub>1−

x</sub>Ga_xSb where 0<

x<

1, and of a selected mole fraction of antimony replaced by at least one of phosphorous represented by InSb<sub>1−

y</sub>P_y where 0<

y<

1, and arsenic represented by InSb<sub>1−

z</sub>As_z where 0<

z<

1, having a respectively predetermined doping level and respectively predetermined energy gap which thereby provide the respective mobility peak thereof;

wherein said plurality of layers comprises a first layer, a second layer and a third layer, said first, second and third layers having a total thickness, wherein the first layer comprises substantially 7% of the total thickness and is doped n type to substantially 1.2×

10¹⁷ cm<sup>−

3</sup>, the second layer comprises substantially 20% of the total thickness and is doped p type to substantially 3×

10¹⁶ cm<sup>−

3</sup>, and the third layer comprises substantially 73% of the total thickness and is doped p type to substantially 5×

10⁶ cm<sup>−

3</sup>.

6. The composite magnetic sensor of claim 5, wherein said n type doping of said first layer is with at least one element selected from the group consisting of Te, Se, S and Si, and wherein said p type doping of said second and third layers is respectively with at least one element selected from the group consisting of Be, C, Mn, Mg, Ca, Sr, Cd and Zn.

7. The composite magnetic sensor of claim 6, further comprising:

a substrate of GaAs upon which is formed said first, second and third layers; and

a plurality of metallic contacts in contact with at least one layer of said Hall plate.

8. A composite magnetic sensor comprising three layers, wherein each layer is comprised of at least one of indium antimonide and an alloy of indium antimonide, said alloy being selected from the group consisting of a selected mole fraction of indium replaced by gallium represented by In₁₋

xGa_xSb wherein 0<

x<

1, and of a selected mole fraction mole fraction of antimony replaced by at least one of phosphorous represented by InSb<sub>1−

y</sub>P_y where 0<

y<

1, and arsenic represented by InSb<sub>1−

z</sub>As_z where 0<

z<

1, each layer having a respectively predetermined doping level and respectively predetermined energy gap which thereby provide the respective mobility peak thereof;

wherein said layers comprise a first layer, a second layer and a third layer, said first second and third layers having a total thickness, wherein the first layer comprises substantially 16% of the total thickness and is doped n type to substantially 1.2×

10¹⁷ cm<sup>−

3</sup>, the second layer comprises 20% of the total thickness and is doped p type to substantially 0.3×

10¹⁷ cm<sup>−

3</sup>, and the third layer comprises substantially 64% of the total thickness and is doped p type to substantially 0.5×

10¹⁷ cm<sup>−

3</sup>.

9. The composite magnetic sensor of claim 8, wherein the first layer is doped n type with at least one group consisting of Te, Se, S and Si to substantially 1.2×

10¹⁷ cm<sup>−

3</sup>, wherein the second layer is doped p type with at least one element selected from the group consisting of Be, C, Mn, Ca, Sr, Cd and Zn to substantially 0.3×

10¹⁷ cm<sup>−

3</sup>, and wherein the third is layer is doped p with one element selected from the group consisting of Be, C, Mn, Ca, and Zn to substantially 0.5×

10¹⁷ cm<sup>−

3</sup>.

10. A Hall plate comprising:

a plurality of layers having a total thickness, said total thickness being substantially between 0.5 microns and 2 microns, and having an aspect ratio of substantially between 10;

1 and 1;

1;

wherein each layer is comprised of at least one of indium antimonide and an alloy of indium antimonide, said alloy being selected from the group consisting of a selected mole fraction of indium replaced by gallium represented by In<sub>1−

x</sub>Ga_xSb where 0<

x<

1, and of a selected mole fraction of antimony replaced by at least one of phosphorous represented by InSb<sub>1−

y</sub>P_y where 0<

y<

1, and arsenic represented by InSb<sub>1−

z</sub>As_z where 0<

z<

1, having a respectively predetermined doping level and respectively predetermined energy gap which thereby provide the respective mobility peak thereof; and

wherein said plurality of layers comprises a first layer, a second layer and a third layer, said first, second and third layers having a total thickness, wherein the first layer comprises substantially 7% of the total thickness and is doped n type to substantially 1.2×

10¹⁷ cm<sup>−

3</sup>, the second layer comprises substantially 20% of the total thickness and is doped p type to substantially 3×

10¹⁶ cm<sup>−

3</sup>, and the third layer comprises substantially 73% of the total thickness and is doped p type to substantially 5×

10¹⁶ cm<sup>−

3</sup>.

11. The Hall Plate of claim 10, wherein said n type doping of said first layer is with at least one element selected from the group consisting of Te, Se, S and Si, and wherein said p type doping of said second and third layers is respectively with at least one element selected from the group consisting of Be, C, Mn, Mg, Ca, Sr, Cd and Zn.