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Composite magnetic sensor

  • US 6,630,882 B1
  • Filed: 07/21/2000
  • Issued: 10/07/2003
  • Est. Priority Date: 08/05/1999
  • Status: Expired due to Fees
First Claim
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1. A composite magnetic sensor comprising:

  • a galvanomagnetic device formed of a plurality of layers;

    wherein each layer is a respectively selected semiconductor material having a respective mobility peak at a respective temperature, wherein the respective temperatures of the mobility peaks are selected so as to be mutually spaced apart over a predetermined range of temperature;

    wherein said layers cumulatively provide magnetic sensitivity which is substantially insensitive to changes in temperature over said predetermined range of temperature; and

    wherein each layer has a thickness of at least ten nanometers;

    wherein said galvanomagnetic device comprises a single magnetoresistive die comprising a first layer and at least one additional layer;

    wherein each layer is comprised of at least one of indium antimonide and an alloy of indium antimonide, said alloy being selected from the group consisting of a selected mole fraction of indium replaced by gallium represented by In1−

    x
    GaxSb where 0<

    x<

    1, and of a selected mole fraction of antimony replaced by at least one of phosphorous represented by InSb1−

    y
    Py where 0<

    y<

    1, and arsenic represented by InSb1−

    z
    Asz where 0<

    z<

    1, each layer having a respectively predetermined doping level and respectively predetermined energy gap which thereby provide the respective mobility thereof;

    wherein said layers comprise a first layer, a second layer and a third layer, said first second and third layers having a total thickness, wherein the first layer comprises substantially 16% of the total thickness and is doped n type to substantially 1.2×

    1017 cm

    3
    , the second layer comprises substantially 20% of the total thickness and is doped p type to substantially 0.3×

    1017 cm

    3
    , and the third layer comprises substantially 64% of the total thickness and is doped p type to substantially 0.5×

    1017 cm

    3
    .

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